germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,
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IBM43RF0100
IBM43RF0100EV
823Vdc.
germanium transistors PNP
SiGe RF TRANSISTOR
pnp germanium transistor
SiGe PNP
TRANSISTOR MAKING LIST
SiGe PNP transistor
FMMT2907ATA
bipolar transistor ghz s-parameter
J1 TRANSISTOR
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9829 A
Abstract: TARF2202 .7E8
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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TARF2202
50-ohm
TAHB09)
30GHz
TARF2202
1900MHz
100MHz
9829 A
.7E8
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MT3S113
Abstract: transistor 2F to-236 4360A
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
MT3S113
transistor 2F to-236
4360A
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9635
Abstract: sige hbt TARF2201 wideband linear amplifier Tx SiGe MMIC
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2201 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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TARF2201
50-ohm
TAHB09)
30GHz
TARF2201
12dBm
900MHz
OT343
9635
sige hbt
wideband linear amplifier
Tx SiGe MMIC
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transistor marking T1k ghz
Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 MARKING T1K
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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NESG3031M05
transistor marking T1k ghz
NESG3031M05
NESG3031M05-A
NESG3031M05-T1
MARKING T1K
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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NESG204619
NESG204619-T1
NESG204619-A
NESG204619-T1-A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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NESG2046M33
NESG2046M33
NESG2046M33-T3
NESG2046M33-A
NESG2046M33-T3-A
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mt3s111
Abstract: No abstract text available
Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking
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MT3S111
O-236
SC-59
mt3s111
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Untitled
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: |S21e| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05
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MT3S111TU
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MT3S111TU
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05
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MT3S111TU
MT3S111TU
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Untitled
Abstract: No abstract text available
Text: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm 2.1±0.1 FEATURES 3 1 2 0.2+0.1 –0.05 1 0~0.1 P8 0.15±0.05 4 +0.05 0.95 –0.15 Marking 3 High Gain:|S21e|2=15.0dB @f=2GHz
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MT4S102U
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RQG2001URAQF
Abstract: RQG2001UR-TL-E SC-82AB
Text: RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
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RQG2001URAQF
REJ03G1554-0100
PTSP0004ZA-A
RQG2001URAQF
RQG2001UR-TL-E
SC-82AB
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KA 1046 Y 838
Abstract: RQG1001UPAQF RQG1001UP-TL-E SC-82AB
Text: RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz
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RQG1001UPAQF
REJ03G1551-0100
PTSP0004ZA-A
KA 1046 Y 838
RQG1001UPAQF
RQG1001UP-TL-E
SC-82AB
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NSL5027
Abstract: transistor LM340 LM340 voltage regulator LM340 AN-103 national 12V 10A voltage regulators NPN Transistor 10A 24V LM320 voltage regulator Lm324 comparator datasheet dual tracking voltage regulator ic 10A
Text: Introduction The LM340-XX are three terminal 1.0A positive voltage regulators, with preset output voltages of 5.0V or 15V. The LM340 regulators are complete 3-terminal regulators requiring no external components for normal operation. However, by adding a few parts, one may improve the transient response, provide for a variable output voltage, or increase the
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LM340-XX
LM340
AN-103
NSL5027
transistor LM340
LM340 voltage regulator
AN-103 national
12V 10A voltage regulators
NPN Transistor 10A 24V
LM320 voltage regulator
Lm324 comparator datasheet
dual tracking voltage regulator ic 10A
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2N43a
Abstract: 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 1999. INCH-POUND MIL-PRF-19500/6C 1 March 1999 SUPERSEDING MIL-S-19500/6B 28 December 1971 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,
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MIL-PRF-19500/6C
MIL-S-19500/6B
2N43AZ1,
2N43AZ2,
2N44AZ1
2N44AZ2
MIL-PRF-19500.
2N43a
2N43A DATASHEET
2N44A
2N43A equivalent
2n44a jan
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HBT 01 - 05
Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna
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90GHz,
90GHz
HBT 01 - 05
dr 25 germanium diode
HBT 01 05G
Silicon germanium Heterojunction Bipolar Transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
poly silicon resistor
1lm2
0.18 um CMOS parameters
hbt 05
HBT 01 - 01 G
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2N1046
Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an
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2N1046
DC-11
germanium power transistor
diode germanium tu 38 f
Germanium Transistor
Texas Germanium
639 TRANSISTOR PNP
Germanium power
diode germanium tu 38 e
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.
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SGA-6389
SGA-6389
50-ohm
DC-3000
EDS-100620
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-4186 Stanford M icrodevices’ SG A-4186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-4186
50-ohm
DC-6000
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IBM43RF0100
Abstract: transistor K 1413
Text: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin = 1 ,1dB @ 2 .0G H z • Low Operating Voltage • Input MP3 Capability: = + 10dBm @ 2.0G Hz, • Package: SO T353 VCc = 3V. lc=5mA Description The IB M 43R F0100 is a Silicon-Germanium SiGe
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IBM43RF0100
10dBm
F0100
transistor K 1413
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2N1925
Abstract: g500ma
Text: 2N1925 GERMANIUM PNP TRANSISTOR PACKAGE STYLE TO- 5 DESCRIPTION: The 2N1925 is Designed for General Purpose Amplifier and Switching Applications. M A X IM U M R A T IN G S lc 500 mA VcER -40 V pd is s 225 mW @ Ta # 25 OC Tj -65 OC to +100 OC Ts t g -65 OC to +100 OC
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2N1925
g500ma
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ua78540
Abstract: MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor tl494 equivalent scr dc motor forward reverse control application SCR scr driving circuit for dc motor MOTOROLA SCR driver EB121
Text: ORDER THIS DOCUMENT BY EB121/D EB121 SCR IMPROVES DC MOTOR CONTROLLER EFFICIENCY SCRs are commonly associated with ac applications because of their drive simplicity and inherent self turn off when the anode current drops below the holding cur rent. However, with proper commutating techniques,
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EB121/D
EB121
ua78540
MOTOROLA SCR
TL494 PWM motor controller
TL494 PWM motor
tl494 equivalent
scr dc motor forward reverse control
application SCR
scr driving circuit for dc motor
MOTOROLA SCR driver
EB121
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2N458B
Abstract: 2N1022A 2N4588 transistor ba 752 2N1021A 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power
Text: TYPES 2N456B, 2N457B, 2N458B, 2N1021A AND 2N1022A P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS Military and Industrial Applications mechanical data The use of silver a llo y to assem ble the mounting b ase a n d the use of resistance w elding to seal the can ,
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2N456B,
2N457B,
2N458B,
2N1021A
2N1022A
2N45M,
2N1021A,
2N1022A
2N458B
2N4588
transistor ba 752
2N456B
2H102
Transistor BC 227
Germanium Transistor
Germanium power
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transistor c114
Abstract: C114 Transistor HA1319 for C114 transistor transistor c119 transistor c114 transistors R107 diode GERMANIUM SMALL SIGNAL TRANSISTORS GERMANIUM TRANSISTOR C109 capacitor
Text: H A I 3 1 9 AUDIO AM PLIFIER FOR TEPE RECORDER • FEATURES • No transformer required thanks to complementary output circuit • Excellent equalizer characteristics • Low-distortion recording even if volumeless because of AGC circuit wide dynamic range.
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HA1319
1N34A
transistor c114
C114 Transistor
HA1319
for C114 transistor
transistor c119
transistor c114 transistors
R107 diode
GERMANIUM SMALL SIGNAL TRANSISTORS
GERMANIUM TRANSISTOR
C109 capacitor
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