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    GENERAL SEMICONDUCTOR DIODE MARKING 08 Search Results

    GENERAL SEMICONDUCTOR DIODE MARKING 08 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR DIODE MARKING 08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SHV-08J High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 4.0 kV ▪ Low Forward Voltage, VF : 8.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA


    Original     		PDF SHV-08J UL94V-0 SHV-08J SHV08J-DS

    T24CD

    Abstract: CDSOD323 TVS sod323
    Text: CO LO & MP LI GE AN N T FR EE *R oH S * HA Features Applications • Protects one line or one I/O port ■ VDSL lines ■ Bidirectional configuration ■ Modems ■ ESD protection 30 kV max. ■ Routers ■ Low capacitance ~ 3 pF typ. ■ Replaces 0805 MLV devices


    Original     		PDF CDSOD323-TxxC-DSL OD323 OD-323 T24CD CDSOD323 TVS sod323

    CDSOD323-T05C

    Abstract: T18C CDSOD323-T08 CDSOD323-T08C CDSOD323-T12 CDSOD323-T12C CDSOD323-T03 CDSOD323-T03C CDSOD323-T05 CDSOD323-TXXC
    Text: T PL IA N M CO * Ro HS Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones


    Original     		PDF CDSOD323-TxxC OD323 OD-323 CDSOD323-T05C T18C CDSOD323-T08 CDSOD323-T08C CDSOD323-T12 CDSOD323-T12C CDSOD323-T03 CDSOD323-T03C CDSOD323-T05 CDSOD323-TXXC

    CDSOD323-T05C

    Abstract: No abstract text available
    Text: NT IA PL CO M Ro HS * Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones


    Original     		PDF CDSOD323-TxxC OD323 OD-323 CDSOD323-T05C

    Untitled

    Abstract: No abstract text available
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■


    Original     		PDF CDSOD323-TxxC OD323 IPA0524

    Untitled

    Abstract: No abstract text available
    Text: FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –4.2 A, –20 V.


    Original     		PDF FDJ129P SC75-6 FDJ129P

    AN-247

    Abstract: LM136-2.5
    Text: LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode General Description The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient 5.0V zener with 0.6Ω dynamic impedance. A third terminal


    Original     		PDF LM136-5 0/LM236-5 0/LM336-5 AN-247 LM136-2.5

    SS8P3CL

    Abstract: JESD22-B102D J-STD-002B
    Text: New Product SS8P2CL & SS8P3CL Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses


    Original     		PDF J-STD-020C O-277A 2002/95/EC 2002/96/EC 08-Apr-05 SS8P3CL JESD22-B102D J-STD-002B

    S103C

    Abstract: SS10P4 SS10P4C S104C JESD22-B102D J-STD-002B to-277A
    Text: New Product SS10P3C & SS10P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses


    Original     		PDF SS10P3C SS10P4C J-STD-020C O-277A 2002/95/EC 2002/96/EC 08-Apr-05 S103C SS10P4 SS10P4C S104C JESD22-B102D J-STD-002B to-277A

    JESD22-B102D

    Abstract: J-STD-002B S86C
    Text: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses


    Original     		PDF O-277A J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B S86C

    S102CL

    Abstract: SS10P2CL S103CL SS10P3CL JESD22-B102D J-STD-002B
    Text: New Product SS10P2CL & SS10P3CL Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifiers FEATURES eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses


    Original     		PDF SS10P2CL SS10P3CL J-STD-020C, O-277A 2002/95/EC 2002/96/EC 08-Apr-05 S102CL SS10P2CL S103CL SS10P3CL JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary US4PBC, US4PCC & US4PDC Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Oxide planar chip junction


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05

    JESD22-B102D

    Abstract: J-STD-002B
    Text: New Product SS8P3C & SS8P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses


    Original     		PDF O-277A J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B

    MMBV609LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package for


    Original     		PDF MMBV609LT1/D MMBV609LT1 MMBV609LT1

    Untitled

    Abstract: No abstract text available
    Text: IMBD4448 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) .016 (0.4) 0.037 (0.95) 0.037 (0.95)


    Original     		PDF IMBD4448 O-236AB OT-23) OT-23, DO-35 14-May-02

    diode marking b2

    Abstract: JESD22-B102D J-STD-002B
    Text: B2M, B4M & B6M New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL Recognized, file number E54214 ~ ~ • Ideal for printed circuit boards • Applicable for automative insertion • Middle surge current capability


    Original     		PDF E54214 2002/95/EC 2002/96/EC 200ed 08-Apr-05 diode marking b2 JESD22-B102D J-STD-002B

    682 SOT23 MARKING

    Abstract: No abstract text available
    Text: ON Semiconductort Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio


    Original     		PDF MMBV105GLT1 236AB) MMBV105GLT1/D 682 SOT23 MARKING

    DFA06

    Abstract: DF005MA DF01MA DF10MA JESD22-B102D J-STD-002B DFA01 DFA0
    Text: DF005MA thru DF10MA New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL Recognition, file number E54214 • Ideal for printed circuit boards • Applicable for automative insertion ~ • High surge current capability


    Original     		PDF DF005MA DF10MA E54214 2002/95/EC 2002/96/EC 08-Apr-05 DFA06 DF01MA DF10MA JESD22-B102D J-STD-002B DFA01 DFA0

    Untitled

    Abstract: No abstract text available
    Text: New Product B2M, B4M & B6M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL recognized, file number E54214 ~ ~ • Ideal for printed circuit boards • Applicable for automative insertion • Middle surge current capability


    Original     		PDF E54214 2002/95/EC 2002/96/EC 08-Apr-05

    DF10 GENERAL SEMICONDUCTOR

    Abstract: DF005 DF005M DF01M DF10M JESD22-B102D J-STD-002B DF02M
    Text: DF005M thru DF10M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL Recognition, file number E54214 • Ideal for printed circuit boards • Applicable for automative insertion ~ • High surge current capability


    Original     		PDF DF005M DF10M E54214 2002/95/EC 2002/96/EC 08-Apr-05 DF10 GENERAL SEMICONDUCTOR DF005 DF01M DF10M JESD22-B102D J-STD-002B DF02M

    Untitled

    Abstract: No abstract text available
    Text: New Product UH4PBC, UH4PCC & UH4PDC Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Oxide planar chip junction


    Original     		PDF O-277A J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05

    DF04S

    Abstract: DF06S DATASHEET DF01S DF06S DF02S diode BY 399 DF10S JESD22-B102D J-STD-002B
    Text: DF005S thru DF10S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL Recognition, file number E54214 • Ideal for automated placement ~ • High surge current capability • Meets MSL level 1, per J-STD-020C, LF max peak


    Original     		PDF DF005S DF10S E54214 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DF04S DF06S DATASHEET DF01S DF06S DF02S diode BY 399 DF10S JESD22-B102D J-STD-002B

    DIODE B6S

    Abstract: B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B
    Text: B2S, B4S & B6S New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability


    Original     		PDF E54214 J-STD-020C, 2002/95/EC 2002/96/EC O-269AA 08-Apr-05 DIODE B6S B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B

    7w08f

    Abstract: 7w08
    Text: TOSHIBA TC7W08F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7W08F, TC7W08FU DUAL 2-INPUT AND GATE The TC7W 08 is a high speed C2MOS 2-INPUT AN D GATE fabricated w ith silicon gate C2MOS technology. It achives the high speed operation sim ilar to equivalent


    OCR Scan     		PDF TC7W08F/FU TC7W08F, TC7W08FU 7w08f 7w08