PDINP075FC11-W-0
Abstract: 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01
Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc. PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon
|
Original
|
PDF
|
1100nm,
1650nm
2100nm.
100micron.
PDINP075FC11-W-0
850nm APD
850nm photodiode pigtail
germanium photodiode PIN
PDINV300FC21-M-0
D10-210
InGaAs apd photodiode
photodiode germanium
PDGAJ1001FCA-0-0-01
PDINC1003FCA-0-0-01
|
PDINP075500A-0-0-01
Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon
|
Original
|
PDF
|
1100nm,
1650nm
2100nm.
100micron.
PDINP075500A-0-0-01
PD-LD
850nm APD
850nm photodiode pigtail
pigtail pin photodiode ge
PDINV300SC2A-M-0
PDSIU500ST73-T-0
Si apd photodiode
PDGAJ1001FCA-0-0-01
PDINC100SC22-M-0
|
LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
|
Original
|
PDF
|
G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
|
G8931-04
Abstract: LH0032 SE-171 OPTICAL NETWORK TERMINAL InGaAs apd photodiode
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
|
Original
|
PDF
|
G8931-04
G8931-04
SE-171
KAPD1018E02
LH0032
OPTICAL NETWORK TERMINAL
InGaAs apd photodiode
|
InGaAs apd photodiode
Abstract: G8931-04 Ge APD SE-171 KAPDC0005EC 1NA100 low dark current APD hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET synchronous optical network , G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).
|
Original
|
PDF
|
G8931-04
G8931-04
SE-171
KAPD1018E03
InGaAs apd photodiode
Ge APD
KAPDC0005EC
1NA100
low dark current APD
hamamatsu ingaas APD
|
LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
|
Original
|
PDF
|
G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
|
G8931-04
Abstract: InGaAs apd photodiode
Text: PHOTODIODE InGaAs APD G8931-04 SONETG/GE-PONに対応した応答特性 SONET、G/GE-PONなどの幹線系光ファイバ通信に必要な2.5 Gbpsの高速応答を実現しています。 特長 用途 l 高速応答: 2.5 Gbps l 低暗電流 l 低容量
|
Original
|
PDF
|
G8931-04
KAPDB0124JA
KAPDA0034JA
KAPDC0005JC
435-85581126-1TEL
434-3311FAX
KAPD1018J03
G8931-04
InGaAs apd photodiode
|
B5170-02
Abstract: No abstract text available
Text: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling Ge photodiodes, the dark current can be reduced effec tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength region.
|
OCR Scan
|
PDF
|
avai10
B2614-03
B2614-05
X1014
B5170-02
B5170-05
B5170-02
|
B2538-05
Abstract: B6175-05
Text: Ge Photodiodes Cooled Types Spectral Response Range: 0.8 to 1.8 urn Achieving higher S/N by cooling T h e c h a rcte ristics of dark cu rrent and S / N can be im proved effectiviely by cooling Ge photodiodes. When cooled, it should be noted that the spectral response of Ge pho
|
OCR Scan
|
PDF
|
B2538-05
B2614-05
B6175-05
KIRDB0023EA
KIRDB0024EA
KIRDB0025EB
B2538-05
|
Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Noncooled Types NIR (Near Infrared) Detectors for Stable Operation at Room Temperature High Stability Over Extended Time Periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.
|
OCR Scan
|
PDF
|
KIRDB0016EA
KIRDB0020EA
0DD43n
|
16C70
Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Text: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior
|
OCR Scan
|
PDF
|
J16TE
J16TE
J16TE2
4C-70
16C-70
32C-70
4C-60
16C-60
16C70
J16D
thermistor inas
detector inas
judson PA-100
Germanium itt
|
Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.
|
OCR Scan
|
PDF
|
C4159
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
|
Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.
|
OCR Scan
|
PDF
|
C4159
KIRDB0015EB
KIADB0017EA
KIRDB0016EA
KIRDB0021EA
KIRDB0022EA
|
Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Noncooled Types NIR (Near Infrared) Detectors for Stable Operation at Room Temperature High Stability O ver Extended T im e Periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.
|
OCR Scan
|
PDF
|
KIRDB0016EA
KIHDB0017EA
KIRDB0018EA
KIRDBD020EA
KIRD80D21EA
KIRDB0022EA
|
|
|
Untitled
Abstract: No abstract text available
Text: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 fj. m Highly Sensitive Photodiodes with Internal Gain Mechanism Ge avalanche photodiodes APD detect and amplify low level light by means of avalanche effects that take place when a reverse bias is applied.
|
OCR Scan
|
PDF
|
KIRDB0030EA
KIRDB0029EA
B2834-01
B2834
KIRDB0034EA
|
Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec tively and the S/N ratio improved.
|
OCR Scan
|
PDF
|
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
P2750,
|
B1920-01
Abstract: No abstract text available
Text: Ge Photodiodes Non-cooled Types Spectral Response Range: 0.8 to 1.8 |im NIR (Near Infrared) detectors for stable operation at room temperature •High stability over extended tim e periods Ge photo d io d es are planar type photovoltaic devices th a t provide
|
OCR Scan
|
PDF
|
C4159
KIRDBQ016EA
KIRDB0021EA
B1920-01
|
Untitled
Abstract: No abstract text available
Text: FRM138621CU DESCRIPTION The FRM13R621CU is an APD pre-amplifier module for 1300nm wave length optical receiver front-end. It contains a planar Ge-APD Avalanche Photodiode and a transimpedance type GaAs pre-amplifier IC. The Ge-APD, having high responsivity, low capacitance and low noise characteristics,
|
OCR Scan
|
PDF
|
FRM138621CU
FRM13R621CU
1300nm
FHM13R62KU
374T75L.
|
Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling G e photodiodes, the dark current can be reduced effec tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength side.
|
OCR Scan
|
PDF
|
KIRDB0023EA
|
peltier effect element
Abstract: B2538-05 B1919-01 B6175-05 res 3010 A3179 A3179-01 B1720-02 B1720-05 B1918-01
Text: Ge Photodiodes Non-cooled Types Spectral Response Range: 0.8 to 1.8 (im NIR (Near Infrared) detectors for stable operation at room temperature Q •High stability over extended tim e periods Ge p h o to d io d e s a rc p la n a r typ e p h o to v o lta ic d e vic e s th a t p ro v id e
|
OCR Scan
|
PDF
|
C4159
B2538-05
B2614-05
B6175-05
peltier effect element
B1919-01
res 3010
A3179
A3179-01
B1720-02
B1720-05
B1918-01
|
SFH2324
Abstract: TIC 138
Text: SIEMENS SFH 2323 SFH 2324 GE-AVALANCHE PHOTODIODE MM FIBER PIGTAIL P relim inary Data Sheet P a cka ge D im e n sio n s in m m SFH2323 M ax £>0 65 « 01 0 5 0 9 i 135 1.7 5.5 1.3 ! 14.2 138 18 1 17 8 ! 0 .5 5 0 .4 0 1 .0 0 8 2 3 . 7 6 10 7 6 7 1“ 10.4 SFH2324
|
OCR Scan
|
PDF
|
SFH2323
SFH2324
SFH2324
TIC 138
|
GM10HS
Abstract: GM7HS S20E Germanium power 3T47375 GM2HS Germanium itt
Text: GERMANIUM POWER DE V I C E S 20E D 3=147375 D000535 7 V-41-41 Ge PHOTODETECTOR Fig 3-1 Typical Specifications at Room Temperative Ge Photodetector ACTIVE DIA. TYPE SPEC TR A L RESPO N SE MM (m) L DARK V (v) R E V E R S E 1UNT R* VOLTAGE C 0R R EN T RESÌSTA NCEKQ
|
OCR Scan
|
PDF
|
D000535
GM10HS
GM7HS
S20E
Germanium power
3T47375
GM2HS
Germanium itt
|
Germanium Power Devices
Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)
|
OCR Scan
|
PDF
|
GAV30
GAV40
GAV100
GAV30
GAV100
MIL-I-45208.
Germanium Power Devices
germanium power devices corporation
Germanium Power Diodes
Photodiodes Germanium PIN
Germanium power
Germanium
|
germanium power devices corporation
Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■
|
OCR Scan
|
PDF
|
GAV30
GAV60
GAV100
GAV300
GAV60
germanium power devices corporation
Germanium Power Devices
Germanium Power Diodes
GAV300
MIL-45208
TO46
germanium photodiode PIN
|
