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    GAN BIAS 25 WATT Search Results

    GAN BIAS 25 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    GAN BIAS 25 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch

    TGF2023-05

    Abstract: No abstract text available
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 44 dBm Nominal Psat 55% Maximum PAE 8.9 dB Nominal Power Gain Bias: Vd = 28 - 35 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch 3A001

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch 3A001

    TGF2023-01

    Abstract: TGF2023-05
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch 3A001 TGF2023-01

    TGF2023-01

    Abstract: TGF2023-05
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch 3A001 TGF2023-01

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 69% Maximum PAE 18 dB Nominal Power Gain at 3 GHz


    Original     		PDF TGF2023-2-01 TQGaN25 TGF2023-2-01 DC-18

    Untitled

    Abstract: No abstract text available
    Text: HMC1086 v04.0714 AMPLIFIERS - LINEAR & POWER - CHIP 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm


    Original     		PDF HMC1086 HMC1086

    HMC999

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM GaN Bias 25 watt rf gan amplifier
    Text: HMC999 v00.0611 Amplifiers - Linear & Power - Chip GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications Features The HMC999 is ideal for: High P1dB Output Power: 38 dBm • Test Instrumentation High Psat Output Power: 40 dBm • Military Communications


    Original     		PDF HMC999 HMC999 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM GaN Bias 25 watt rf gan amplifier

    tga2579-fl

    Abstract: TGA2579 GaN Bias 25 watt
    Text: TGA2579-FL 25 Watt Ku-Band GaN Power Amplifier Applications • Ku-band communications Product Features      Functional Block Diagram Frequency Range: 13.75 - 15.35 GHz Saturated Output Power: 44 dBm Power-added Efficiency: 30%


    Original     		PDF TGA2579-FL TGA2579-FL TGA2579 GaN Bias 25 watt

    Untitled

    Abstract: No abstract text available
    Text: HMC999 v01.0112 Amplifiers - lineAr & power - Chip GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications Features The hmC999 is ideal for: high p1dB output power: 38 dBm • Test Instrumentation high psat output power: 40 dBm • Military Communications


    Original     		PDF HMC999 HMC999

    GaN Bias 25 watt

    Abstract: No abstract text available
    Text: HMC999 v01.0112 Amplifiers - Linear & Power - Chip GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications Features The HMC999 is ideal for: High P1dB Output Power: 38 dBm • Test Instrumentation High Psat Output Power: 40 dBm • Military Communications


    Original     		PDF HMC999 HMC999 102mm GaN Bias 25 watt

    Untitled

    Abstract: No abstract text available
    Text: HMC1086 v03.0414 AMPLIFIERS - LINEAR & POWER - CHIP 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm


    Original     		PDF HMC1086 HMC1086

    HMC1087

    Abstract: No abstract text available
    Text: HMC1087 v03.0414 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz AMPLIFIERS - LINEAR & POWER - CHIP The information provided in this document is for a product controlled by the International Traffic in Arms Regulations ITAR . This product cannot be shipped outside of the United States without a U.S. Department of State export license.


    Original     		PDF HMC1087 HMC1087

    Untitled

    Abstract: No abstract text available
    Text: HMC1086 v01.0413 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz AMPLIFIERS - LINEAR & POWER - CHIP The information provided in this document is for a product controlled by the International Traffic in Arms Regulations ITAR . This product cannot be shipped outside of the United States without a U.S. Department of State export license.


    Original     		PDF HMC1086 HMC1086

    Untitled

    Abstract: No abstract text available
    Text: HMC1087 v02.1113 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz AMPLIFIERS - LINEAR & POWER - CHIP The information provided in this document is for a product controlled by the International Traffic in Arms Regulations ITAR . This product cannot be shipped outside of the United States without a U.S. Department of State export license.


    Original     		PDF HMC1087 HMC1087

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace  Broadband Wireless Product Features        Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz


    Original     		PDF TGF2023-2-01 TGF2023-2-01 DC-18

    TGA2572

    Abstract: GaN 100 watt GaN amplifier GaN Bias 25 watt
    Text: TGA2572 20 Watt Ku-Band GaN Power Amplifier Applications • Ku-band Communications Product Features • • • • • Functional Block Diagram Vg1,2 Frequency Range: 14 – 16 GHz Power: 43 dBm Psat Small Signal Gain: 23 dB Bias: Vd = 35 V, Id = 2.0 A, Vg = -3.2 V Typical


    Original     		PDF TGA2572 TGA2572 43dBm GaN 100 watt GaN amplifier GaN Bias 25 watt

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC7149 v01.1113 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - CHIP


    Original     		PDF HMC7149 HMC7149

    tgf2023-2-05

    Abstract: No abstract text available
    Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE


    Original     		PDF TGF2023-2-05 TQGaN25 TGF2023-2-05 DC-18

    MC8087-2/GaN 100 watt

    Abstract: No abstract text available
    Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 56% Maximum PAE


    Original     		PDF TGF2023-2-05 TQGaN25 TGF2023-2-05 DC-18 MC8087-2/GaN 100 watt

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz


    Original     		PDF TGF2023-2-10 TQGaN25 TGF2023-2-10 DC-18

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 71.6% Maximum PAE


    Original     		PDF TGF2023-2-01 TQGaN25 TGF2023-2-01 DC-18

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 64% Maximum PAE


    Original     		PDF TGF2023-2-02 TQGaN25 TGF2023-2-02 DC-18