7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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FLC087XP
Abstract: No abstract text available
Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general
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FLC087XP
FLC087XP
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GaAs FET HEMT Chips
Abstract: Fujitsu 511 FLC08
Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general
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FLC087XP
FLC087XP
FCSI0598M200
GaAs FET HEMT Chips
Fujitsu 511
FLC08
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Untitled
Abstract: No abstract text available
Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general
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FLC087XP
FLC087XP
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GaAs FET HEMT Chips
Abstract: GaAs FET chip FLC087XP C-Band Power GaAs FET HEMT Chips
Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general
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FLC087XP
FLC087XP
GaAs FET HEMT Chips
GaAs FET chip
C-Band Power GaAs FET HEMT Chips
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FLC087XP
Abstract: FUJITSU RF 053 GaAs FET HEMT Chips
Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general
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FLC087XP
FLC087XP
17serve
FCSI0598M200
FUJITSU RF 053
GaAs FET HEMT Chips
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Untitled
Abstract: No abstract text available
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
15hods
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Untitled
Abstract: No abstract text available
Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for
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FLC157XP
FLC157XP
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Untitled
Abstract: No abstract text available
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
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Untitled
Abstract: No abstract text available
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
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fujitsu hemt
Abstract: No abstract text available
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
FCSI0598M200
fujitsu hemt
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GaAs FET HEMT Chips
Abstract: FLK057XV
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
GaAs FET HEMT Chips
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GaAs FET HEMT Chips
Abstract: 876 fujitsu fet general
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
FCSI0598M200
GaAs FET HEMT Chips
876 fujitsu
fet general
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FLK017XP
Abstract: GaAs FET HEMT Chips
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
FCSI0598M200
GaAs FET HEMT Chips
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108 to 174 mhz
Abstract: FLK027XP FLK027XV
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FCSI0598M200
108 to 174 mhz
FLK027XP
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1278n
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
1278n
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Untitled
Abstract: No abstract text available
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
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Untitled
Abstract: No abstract text available
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
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Untitled
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FLK027XP
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FLK207XV
Abstract: GaAs FET HEMT Chips
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
FCSI0598M200
GaAs FET HEMT Chips
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GaAs FET HEMT Chips
Abstract: 1756 N2 C-Band Power GaAs FET HEMT Chips 1060 fet FLC157XP 682 FET
Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for
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FLC157XP
FLC157XP
GaAs FET HEMT Chips
1756 N2
C-Band Power GaAs FET HEMT Chips
1060 fet
682 FET
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GaAs FET HEMT Chips
Abstract: 2064 fet FLK017XP DIE CHIP 51 FET
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
GaAs FET HEMT Chips
2064 fet
DIE CHIP 51 FET
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12QHz
Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
Text: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium
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FSX027X
FSX027X
12GHz.
FCSI0598M200
12QHz
GaAs FET HEMT Chips
fujitsu gaas fet
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2SK676
Abstract: GaAs FET HEMT Chips
Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high
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2SK676H5
2SK676H
2SK676
GaAs FET HEMT Chips
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