Untitled
Abstract: No abstract text available
Text: DMA56602 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: G0 Basic Part Number
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DMA56602
UL-94
DRA2124E
DMA566020R
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RT8208FGQW
Abstract: rt8208
Text: RT8208E/F Programmable Output Voltage Single Synchronous Buck Controller General Description Features The RT8208E/F is a constant-on-time PWM controller which provides four resistor programmable DC output voltages by controlling the G0 and G1 digital input. The
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RT8208E/F
RT8208E/F
100ns
DS8208E/F-03
RT8208FGQW
rt8208
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RT8208A
Abstract: RT8208B rt8208 DS820 BSC119N03S
Text: RT8208A/B Programmable Output Voltage Single Synchronous Buck Controller General Description Features The RT8208A/B is a constant-on-time PWM controller which provides four resistor-programmable DC output voltages by controlling the G0 and G1 digital input. The
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RT8208A/B
100ns
RT8208A/B
DS8208A/B-00
RT8208A
RT8208B
rt8208
DS820
BSC119N03S
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RT8208DGQW
Abstract: No abstract text available
Text: RT8208D Programmable Output Voltage Single Synchronous Buck Controller General Description Features The RT8208D is a constant on-time PWM controller which provides four resistor-programmable DC output voltages by controlling the G0 and G1 digital input. The output
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RT8208D
RT8208D
100ns
DS8208D-03
RT8208DGQW
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RT8208AGQW
Abstract: RT8208A RT8208B RT8208BGQW RT8208 RT8208AZQW
Text: RT8208A/B Programmable Output Voltage Single Synchronous Buck Controller General Description Features The RT8208A/B is a constant-on-time PWM controller which provides four resistor programmable DC output voltages by controlling the G0 and G1 digital input. The
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RT8208A/B
RT8208A/B
100ns
DS8208A/B-04
RT8208AGQW
RT8208A
RT8208B
RT8208BGQW
RT8208
RT8208AZQW
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DDR3 sodimm pcb layout
Abstract: DDR3 pcb layout micron DDR3 pcb layout MT41K512M8
Text: 4GB x64, SR 204-Pin DDR3L-RS SODIMM Features 1.35V DDR3L-RS SDRAM SODIMM MT8MTF51264HSZ – 4GB MT8MTF51264HRZ – 4GB Features Figure 1: 204-Pin SODIMMs (MO-268 R/C G0, R/C H0) • DDR3L-RS functionality and operations supported as defined in the component data sheet
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204-Pin
MT8MTF51264HSZ
MT8MTF51264HRZ
MO-268
204-pin,
PC3-12800,
PC3-10600
09005aef84fc0fd3
mtf8c512x64hz
DDR3 sodimm pcb layout
DDR3 pcb layout
micron DDR3 pcb layout
MT41K512M8
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DDR3 sodimm pcb layout
Abstract: micron DDR3 pcb layout DDR3 pcb layout micron ddr3 pcb design considerations Micron DDR3 sodimm pcb layout MT8MTF51264HRZ-1G4 DDR3 DRAM layout MT8MTF51264HSZ-1G6
Text: 4GB x64, SR 204-Pin DDR3L-RS SODIMM Features 1.35V DDR3L-RS SDRAM SODIMM MT8MTF51264HSZ – 4GB MT8MTF51264HRZ – 4GB Features Figure 1: 204-Pin SODIMMs (MO-268 R/C G0, R/C H0) • DDR3L-RS functionality and operations supported as defined in the component data sheet
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204-Pin
MT8MTF51264HSZ
MT8MTF51264HRZ
204-pin,
PC3-12800,
PC3-10600
09005aef84fc0fd3
mtf8c512x64hz
DDR3 sodimm pcb layout
micron DDR3 pcb layout
DDR3 pcb layout
micron ddr3 pcb design considerations
Micron DDR3 sodimm pcb layout
MT8MTF51264HRZ-1G4
DDR3 DRAM layout
MT8MTF51264HSZ-1G6
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DDR3 pcb layout
Abstract: DDR3 sodimm pcb layout MT41K512M8 micron DDR3 pcb layout DDR3 SDRAM micron DDR3 DRAM layout
Text: 4GB x64, SR 204-Pin DDR3L-RS SODIMM Features 1.35V DDR3L-RS SDRAM SODIMM MT8MTF51264HSZ – 4GB MT8MTF51264HRZ – 4GB Features Figure 1: 204-Pin SODIMMs (MO-268 R/C G0, R/C H0) • DDR3L-RS functionality and operations supported as defined in the component data sheet
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204-Pin
MT8MTF51264HSZ
MT8MTF51264HRZ
204-pin,
PC3-12800,
PC3-10600
09005aef84fc0fd3
mtf8c512x64hz
DDR3 pcb layout
DDR3 sodimm pcb layout
MT41K512M8
micron DDR3 pcb layout
DDR3 SDRAM micron
DDR3 DRAM layout
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Untitled
Abstract: No abstract text available
Text: TS2012EI Filter-free Flip Chip stereo 2 x 2.5 W class D audio power amplifier Datasheet - production data Applications LOUT- STDBYL PGND • Cellular phones ROUT- PDA LOUT+ STDBYR AGND Description ROUT+ PVCC G1 G0 AVCC LIN+ INL+ LIN- RIN- RIN+ The TS2012EI is a fully-differential stereo class D
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TS2012EI
TS2012EI
DocID026152
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I DESCRIPTION ICompany name changed IDATE ム ムl corr e ctlon category 1 temper at ur e range Apr， ， 40 'C~+8 5'C→ 40'C~ 十 105'C Additi 0n ;rated v0Ita ge ( O e l a t l n g0 1r a t e dv
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TEB7175H
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mt relay
Abstract: MTMF0W00 11 pin relay Socket 7-1393163-6 S0309-AA mt2 relay STK 4070 DIN50022 8-1393163-4 5 pin din socket
Text: RS 424-7483 RS 424-7477 Accessories Multimode Relay MT and similar design: octal / undecal Features • · · · · Snap-on mounting on DIN-rail Screw mounting Pozidrive screws with rising clamp terminals Logical layout of input-/output connections White marking area
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F0235-A
11pole
0110b)
S0309-AB
F0104-A
F0105-A
F0106-A
S0309-AD
MT78602.
MT78613
mt relay
MTMF0W00
11 pin relay Socket
7-1393163-6
S0309-AA
mt2 relay
STK 4070
DIN50022
8-1393163-4
5 pin din socket
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mt relay
Abstract: s0309 mt 740 relay 50024 s0311 1N4007 DIN50022 11 pin relay Socket 11-Pole MT78760
Text: Accessories Multimode Relay MT and similar design: octal / undecal Features • · · · · Snap-on mounting on DIN-rail Screw mounting Pozidrive screws with rising clamp terminals Logical layout of input-/output connections White marking area Dimensions in mm
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F0235-A
11pole
0110b)
S0309-AB
F0104-A
F0105-A
F0106-A
S0309-AD
MT78602.
MT78613
mt relay
s0309
mt 740 relay
50024
s0311
1N4007
DIN50022
11 pin relay Socket
11-Pole
MT78760
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mt relay
Abstract: S0309 mt 740 relay 7-1393163-6 50024 L0730 s0311 MT78760 DIN50022 MTMF0W00
Text: Accessories Multimode Relay MT and similar design: octal / undecal Features • · · · · Snap-on mounting on DIN-rail Screw mounting Pozidrive screws with rising clamp terminals Logical layout of input-/output connections White marking area Dimensions in mm
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F0235-A
11pole
0110b)
S0309-AB
F0104-A
F0105-A
F0106-A
S0309-AD
MT78602.
MT78613
mt relay
S0309
mt 740 relay
7-1393163-6
50024
L0730
s0311
MT78760
DIN50022
MTMF0W00
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Untitled
Abstract: No abstract text available
Text: TS4999 Filter-free stereo 2.8 W class D audio power amplifier with selectable 3D sound effects Features • Operates from VCC = 2.4 to 5.5 V ■ Dedicated standby mode active low/channel ■ Output power per channel: 2.8 W at 5 V into 4 Ω with 10% THD+N or 0.7 W at 3.6 V into 8 Ω
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TS4999
18-bump
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2PB710
Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
Text: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-
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711DflEb
007Q021J
2PD602;
2PD602A
2PB710
2PB710A
VSA314
2PD602Q:
2PD602R:
2PD602S:
2PD602
2PD602A
2PD602AQ
2PD602Q
2PD602R
2PD602S
SC59
transistor 2061
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0903164
Abstract: No abstract text available
Text: Gds A-C DIN 41612 • VG 95 324 • Type C Number of contacts 96,64,32 Female connectors Identification Female connector with solder pins 2.5 mm Female connector with solder pins 4 mm Number Contact of contacts arrangement '234 .g0 96 fillc 32 h' -fW. 1234.
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00005fl4
0903164
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Untitled
Abstract: No abstract text available
Text: REV - HOUSING 0.079 .355 MIN DEEP POLARIZING HOLE ECN 5436 APP’ D JT 4 / 1 2 / 0 4 DATE CODE BLACK MARKING .062 HT BLUE GROMMET 2X 0.150 THRU HOLE e^i@ \'7 a4v° MAX 1-406 ,600 'n ,I ,500 T 4 ^ 0 ,4U U — '— I I t• g0° 1,075 ±,010 © © / © ©
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RSE116524
RSE116525
SZ16/16
LE414-
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 5SE D • G0Ü57ES ■ URN ADVANCE MT4C16M1A1 883C 16 MEG X 1 DRAM M IC R O N MILITARY DRAM 16 MEG X 1 DRAM § % FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and PIN ASSIGNMENT Top View 24-Pin DIP High-performance, CMOS silicon-gate process
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MT4C16M1A1
330mW
096-cycle
24-Pin
100ns
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CAPACITOR 62 680 4J
Abstract: CAPACITOR 64 680 4J
Text: C a l - C h i P G0 3ÎM®ksf •üÆm»pai :*iaa GMC S eries Multilayer Ceramic Chip Capacitors introduction Multilayer Surface Mount Ceramic Capacitors are constructed by screen printing alternative layers of internal metallic elec trodes onto ceramic dielectric materials and firing into a concrete monolithic body, then completed by application of metal end
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system82
CAPACITOR 62 680 4J
CAPACITOR 64 680 4J
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transistor r3n
Abstract: marking KD SOT23 KSR1114 KSR2114
Text: SAMSUNG S EMIC ONDUCT OR INC ' KSR2114 14E D p NP SWITCHING APPLICATION | 7 =1 1 ,4 1 42 G0 0 7 1 3 4 1 | EPITAXIAL SILICON TRANSISTOR T-3,1- <3 B ias R esistor Built In t - ' ' SOT-23 • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R, = 4.7Kß, R ,= 4 7 K fi)
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KSR2114
KSR1114
OT-23
-10nA,
10OfjA,
transistor r3n
marking KD SOT23
KSR1114
KSR2114
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hall IC 21E
Abstract: lm 7803 3V D0003T1 yat5 lm 7803
Text: 1 THOMSON MIL ET SPATIAUX 2=1E D TQ H böTS Q 0Q 03bM 2 • ~pL vf. j Juno 1000 ^ oWSOu c Ä * \ l f t J * ' *_ * f \ G0,<"oBp.33Ci £ cc<* A O .O S VG S n ffc V .-v * * VIM VS VO S V KB *' IP l i i l l i i ] U il igle Field Area Array CCD* Image Sensor
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0G0D371
hall IC 21E
lm 7803 3V
D0003T1
yat5
lm 7803
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IN6147A
Abstract: 6153 Q002 1N6138 8800 gt IN6164 GT6139 1N6139 1N6140 1N6144
Text: S — SIC D § 7 ^ 2 3 7 THOMSON D "T~H*SL& 59C 0 2 6 3 5 O T H O M S O N -C S F ^ : ï 1N 61M DIVISION SEMICONDUCTEUF A ^ ? N ° IJ O l M G0üab3S S J ” • 6173 A ° l/ J i " U N I-A N D BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DU PRO TECTION UNI - ET BIDIRECTIONNELLES
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18kW/8-20/isexpo.
IN6147A
6153
Q002
1N6138
8800 gt
IN6164
GT6139
1N6139
1N6140
1N6144
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IR 427B
Abstract: DIODE MARKING CODE G0 SOT23 "Variable Capacitance Diode" BBY40 VARIABLE CAPACITANCE DIODE marking diode S2 sot-23
Text: I I b3E D • bbSBTEM G0?427b STO ■ SIC3 n a p c /p h i l i p s BBY40 A semicond FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TE S T ISSUE OF H A N D B O O K SC01 OR D A T A S H E E T SILICON PLANAR VARIABLE CAPACITANCE DIODE The B BY40 is a variable capacitance diode in a plastic envelope intended for electronic tuning in V H F
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BBY40
BBY40
OT-23.
IR 427B
DIODE MARKING CODE G0 SOT23
"Variable Capacitance Diode"
VARIABLE CAPACITANCE DIODE
marking diode S2 sot-23
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLY35
CLY35-00
MWP-35
CLY35-05
CLY35-10
CLY35-nn:
QS9000
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