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Text: PU4511 Transistors Common Emitter Transistor Array Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4 P(D) Max. (W)15# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: 2SD1267AP Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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Text: 2SD1909 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)6 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.200
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Text: 2SD1323 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.1k h(FE) Max. Current gain.10k
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Text: 2SB930R Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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Text: 2SD1499 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)3
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Text: 2SD1485 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2 @I(C) (A) (Test Condition)3
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Text: PU4519 Transistors Darlington Transistor Array Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)2 P(D) Max. (W)15# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1m @V(CBO) (V) (Test Condition)60
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Text: 2SD1267A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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Text: 2SC3973 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)7 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)4
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Text: 2SD1267AQ Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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Text: PU4123P Transistors Darlington Transistor Array Number of Devices4 Type NPN/PNP NPN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)2 P(D) Max. (W)15# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)50
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Text: 2SD1773 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)8 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.1k
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Text: PU4420P Transistors Darlington Transistor Array Number of Devices4 Type NPN/PNP NPN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4 P(D) Max. (W)15# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition)60
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Text: 2SC3975 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)10 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)6
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Text: 2SB1254P Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)7 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)160 h(FE) Min. Current gain.8k
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Text: PU3219 Transistors Darlington Transistor Array Number of Devices3 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)2 P(D) Max. (W)15# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1m @V(CBO) (V) (Test Condition)60
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Text: 2SD1267AR Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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Text: 2SD1741 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)200 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)500m
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Text: 2SD1267 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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Text: 2N1017 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.20 h(FE) Max. Current gain.30Â
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