a21l
Abstract: MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 96M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM MB84VFAF5F5J1-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
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MB84VFAF5F5J1-70
115-ball
F0211
MB84VFAF5F5J1
a21l
MARKING HRA
SGA43
marking code 4e
SA98
sga36
sga39
SA132
SGA33
sga5400
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s5l840fx
Abstract: S5L840F calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002
Text: CPAD-WALTZ S5L840F Internet Audio Decoder for Flash Memory Media Data Sheet INTRODUCTION S5L840F is a single chip digital audio player IC supporting various compressed audio format on Flash Memory Media. S5L840F provides 2Mbits of embedded NOR flash memory and 76Kbytes of SRAM requiring no external
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S5L840F)
S5L840F
76Kbytes
16bit
CALMRISC16TM)
24bit
MAC2424
CalmRISC16)
s5l840fx
calmRISC16
P9336
and pin diagram of MMC 4017
CalmRISC-16
player audio to flash memoy
s5l8
samsung i2s
S5H5002
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SA153
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 128M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ128B-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
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MB84VZ128B-70
115-ball
F0211
MB84VZ128B
SA153
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012F
Abstract: reset nand flash 804aH
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
012F
reset nand flash
804aH
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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Spansion gl128
Abstract: sa5888 SPANSION gl512 27631 S29PL127J S75PL127J S75PL127JBD Spansion s29pl127j GL128 GL512
Text: S75PL127J MCPs Stacked Multi-Chip Product MCP CODE Flash, pSRAM and DATA Flash 128M (8M x 16-Bit CMOS 3.0 VoltOnly, Simultaneous Operation, Page Mode CODE Flash Memory, with 64M/32M (4M/2M x 16-Bit) pSRAM and 512M/256/128M (32M/16M/8M x 16Bit) Data Flash Memory
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S75PL127J
16-Bit
64M/32M
16-Bit)
512M/256/128M
32M/16M/8M
16Bit)
110ns
Spansion gl128
sa5888
SPANSION gl512
27631
S29PL127J
S75PL127JBD
Spansion s29pl127j
GL128
GL512
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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10072h
Abstract: structure chart of samsung company
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
10072h
structure chart of samsung company
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BA114
Abstract: BA107 samsung ba92 BA122
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA114
BA107
samsung ba92
BA122
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BA961
Abstract: BA43 48FBGA samsung nor flash ba107
Text: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA961
BA43
samsung nor flash
ba107
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BA107
Abstract: ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
48FBGA
047MAX
BA107
ba4901
ba741
BA115
ba901
BA5101
BA100 diode
BA102
BA116
ba941
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BA17
Abstract: K8D3216UT K8D3216
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
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K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
08MAX
BA17
K8D3216UT
K8D3216
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Untitled
Abstract: No abstract text available
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
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K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
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48FBGA
Abstract: BGA24 ba3101 BA4910 ba4410 BA4111
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
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K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
08MAX
BGA24
ba3101
BA4910
ba4410
BA4111
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Untitled
Abstract: No abstract text available
Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations
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IS29GL256
32768K
16384K
16-bit)
8-word/16-byte
14x20mm)
IS29GL256-JILE
11x13mm)
IS29GL256-JELA*
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Untitled
Abstract: No abstract text available
Text: IS29GL128 128 Megabit 16384K x 8-bit / 8192K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations
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IS29GL128
16384K
8192K
16-bit)
8-word/16-byte
32-word/64-byte
128-word/256-byte
14x20mm)
IS29GL128-JILE
11x13mm)
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TC58FVM7T2ATG65
Abstract: TC58FVM7B2ATG65 lba99 BA127 BA234 TC58FVM7B2A TC58FVM7T2A TC58FVM7T TC58FVM7T2 TC58FVM7T2ATG
Text: TC58FVM7T2ATG65/TC58FVM7B2ATG65 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS / 8M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized
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TC58FVM7T2ATG65/TC58FVM7B2ATG65
128-MBIT
TC58FVM7T2A/B2A
134217728-bit,
BA134
BA135
BA230
BA231
TC58FVM7T2ATG65
TC58FVM7B2ATG65
lba99
BA127
BA234
TC58FVM7B2A
TC58FVM7T2A
TC58FVM7T
TC58FVM7T2
TC58FVM7T2ATG
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Untitled
Abstract: No abstract text available
Text: IS29GL128 128 Megabit 16384K x 8-bit / 8192K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations
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IS29GL128
16384K
8192K
16-bit)
8-word/16-byte
32-word/64-byte
128-word/256-byte
14x20mm)
IS29GL128-JILE
11x13mm)
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EN29LV640AB
Abstract: EN29LV640AT marking SG32 66-SA 56-SA 60-SA 76-SA 88-SA en29lv640A 68-SA
Text: EN29LV640A EN29LV640A 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • JEDEC Standard compatible • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations
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EN29LV640A
16-bit)
EN29LV640A
EN29LV640AB
EN29LV640AT
marking SG32
66-SA
56-SA
60-SA
76-SA
88-SA
68-SA
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ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
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K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
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diode ba102
Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
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TC58FVT641/B641FT-10
64-MBIT
TC58FVT641/B641
864-bit,
BA102
BA103
BA110
BA111
diode ba102
BA102
BA127
BA127 Diode
TC58FVB641FT
BA43
B641
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OTO70
Abstract: No abstract text available
Text: rfb FLASH MEMORY ☆ New product * Under developm ent • FLASH MEMORIES Continued <Boot Block*4 Smart Voltage Flash Memory> Capacity 4M 8M 16M Bit configuration x 16 x 16 x 16 Block configuration Access time (ns) MAX. (Vcc =5 V) Model No. Supply voltage
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OCR Scan
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PDF
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LH28F400BGE/N/B-TL85/TL12
LH28F400BGHE/B-TL85/TL12
LH28F400BGE/N/B-BL85/BL12
LH28F400BGHE/B-BL85/BL12
OTO70
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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OCR Scan
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PDF
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120GB
128MB
256MB
128MB
512MB
K9HCG08U5M
K9WBG08U1M
K9LAG08U0M-PCB0
KMAFN0000M
KMBGN0000A
K9MDG08U5M-PCB0
K4M56323PI
MCCOE32GQMPQ-M
K4M56163PI
movinand
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