155-0183
Abstract: No abstract text available
Text: HMJ4 High Dynamic Range FET Mixer Product Features Product Description • +36 dBm IIP3 Functional Diagram The HMJ4 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +36 dBm at an LO drive level of +17
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18-pin
JESD22-C101
1-800-WJ1-4401
155-0183
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Untitled
Abstract: No abstract text available
Text: HMJ8 High Dynamic Range FET Mixer Product Features Product Description • +37 dBm IIP3 Functional Diagram The HMJ8 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +18
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18-pin
JESD22-C101
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: HMJ2 High Dynamic Range FET Mixer Product Features Product Description • +37 dBm IIP3 Functional Diagram The HMJ2 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +17
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18-pin
JESD22-C101
1-800-WJ1-4401
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JESD22-A114
Abstract: gaas fet marking A
Text: HMJ8 High Dynamic Range FET Mixer Product Features Product Description x +37 dBm IIP3 Functional Diagram The HMJ8 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +18
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18-pin
JESD22-C101
1-800-WJ1-4401
JESD22-A114
gaas fet marking A
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SGM2016AM
Abstract: SGM2016AP dual-gate
Text: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
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SGM2016AM/AP
SGM2016AM/AP
SGM2016AM
SGM2016AP
900MHz
M-254
SGM2016AM
SGM2016AP
dual-gate
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Untitled
Abstract: No abstract text available
Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014AN
SGM2014AN
M-281
900MHz
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Untitled
Abstract: No abstract text available
Text: SGM2014AM GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF
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SGM2014AM
SGM2014AM
900MHz
M-254
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SGM2014AM
Abstract: No abstract text available
Text: SGM2014AM GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014AM
SGM2014AM
900MHz
M-254
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SGM2014AN
Abstract: No abstract text available
Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014AN
SGM2014AN
M-281
900MHz
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3SK165A
Abstract: 3SK165A-0 3SK165A-1 nf 820
Text: 3SK165A GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation
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3SK165A
3SK165A
800MHz
M-254
3SK165A-0
3SK165A-1
nf 820
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"GaAs N-channel Dual Gate"
Abstract: SGM2014AN Sony Semiconductor M-281
Text: SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications
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SGM2014AN
SGM2014AN
M-281
900MHz
"GaAs N-channel Dual Gate"
Sony Semiconductor M-281
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3SK165A
Abstract: 3SK165A-0 3SK165A-1
Text: 3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications
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3SK165A
3SK165A
800MHz
M-254
3SK165A-0
3SK165A-1
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N-Channel, Dual-Gate FET
Abstract: SGM2014AM
Text: SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications
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SGM2014AM
SGM2014AM
900MHz
M-254
N-Channel, Dual-Gate FET
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SGM2013N
Abstract: transistor frequency 1.5GHz gain 20 dB dual-gate
Text: SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications
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SGM2013N
SGM2013N
M-281
900MHz,
transistor frequency 1.5GHz gain 20 dB
dual-gate
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SGM2016AN
Abstract: dual-gate
Text: SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications
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SGM2016AN
SGM2016AN
M-281
900MHz
dual-gate
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3SK165A
Abstract: 3SK165A-1 3SK165A-0
Text: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation
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3SK165A
3SK165A
800MHz
M-254
3SK165A-1
3SK165A-0
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HMJ7
Abstract: CATV HEADEND JESD22-A114
Text: HMJ7 The Communications Edge TM Product Information High Dynamic Range FET Mixer Product Features Product Description x +34 dBm IIP3 Functional Diagram The HMJ7 is a high dynamic range GaAs FET mixer. This active broadband mixer realizes a typical third order
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22-pin
JESD22-C101
1-800-WJ1-4401
HMJ7
CATV HEADEND
JESD22-A114
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HMC216MS8
Abstract: No abstract text available
Text: HMC216MS8 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz SEPTEMBER 1999 Midband Performance General Description IP3 INPUT : +25 dBm @ +11 dBm LO The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface
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HMC216MS8
HMC216MS8
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SGM2016AN
Abstract: dual-gate SGM2016 N-Channel, Dual-Gate FET
Text: SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
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SGM2016AN
SGM2016AN
M-281
900MHz
dual-gate
SGM2016
N-Channel, Dual-Gate FET
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ov 2094
Abstract: No abstract text available
Text: SONY 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features
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3SK165A
800MHz
3SK165A
M-254
ov 2094
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Sony Semiconductor M-281
Abstract: No abstract text available
Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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OCR Scan
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PDF
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SGM2014AN
900MHz
900MHz
M-281
SGM2014AN
M-281
Sony Semiconductor M-281
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Untitled
Abstract: No abstract text available
Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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OCR Scan
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PDF
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SGM2014AM
900MHz
SGM2014AM
M-254
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Untitled
Abstract: No abstract text available
Text: SONY SGM2014AN GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF
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OCR Scan
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PDF
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SGM2014AN
SGM2014AN
900MHz
M-281
JO-651
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dual-gate
Abstract: No abstract text available
Text: SONY SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
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OCR Scan
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PDF
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SGM2016AM/AP
SGM2016AM/AP
900MHz
SGM2016AM
M-254
SGM2016AP
M-255
dual-gate
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