Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13149 Revision. 2 Product Standards MOS FET FM6L52020L FM6L52020L Silicon N-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features Marking Symbol : Y6 1.4
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TT4-EA-13149
FM6L52020L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 Features Marking Symbol : Y2 1.4 1.6
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TT4-EA-13066
FL6L52060L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features Marking Symbol Y3 1.4 1.6
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TT4-EA-13148
FL6L52030L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features Marking Symbol Y4 1.4 1.6
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TT4-EA-13067
FL6L52070L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14213 Revision. 3 Product Standards MOS FET SK8603150L SK8603150L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 15 5.9 6.15 Low Drain-source On-state Resistance : RDS on typ = 2.5 m (VGS = 4.5 V)
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TT4-EA-14213
SK8603150L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 16 5.9 6.15 Low Drain-source On-state Resistance : RDS on typ = 3.3 m (VGS = 4.5 V)
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TT4-EA-14462
SK8603160L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14211 Revision. 4 Product Standards MOS FET SK8603190L SK8603190L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 19 5.9 6.15 Low Drain-source On-state Resistance : RDS on typ = 10 m (VGS = 4.5 V)
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TT4-EA-14211
SK8603190L
UL-94
12easures
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14480 Revision. 2 Product Standards MOS FET SK8603170L SK8603170L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 17 5.9 6.15 Low Drain-source On-state Resistance : RDS on typ = 3.9 m (VGS = 4.5 V)
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TT4-EA-14480
SK8603170L
UL-94
20easures
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14461 Revision. 3 Product Standards MOS FET SK8603140L SK8603140L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 14 5.9 6.15 Low Drain-source On-state Resistance : RDS on typ = 1.8 m (VGS = 4.5 V)
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TT4-EA-14461
SK8603140L
UL-94
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14538
Abstract: No abstract text available
Text: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 30 5.9 6.15
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TT4-EA-14538
SK8603300L
UL-94
14538
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3 Marking Symbol : 1.2 1.6 Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant
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TT4-EA-14570
FC694308ER
UL-94
FK330308
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3 Marking Symbol : 1.2 1.6 Low drive voltage : 1.5 V drive Halogen-free / RoHS compliant
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TT4-EA-14543
FC694309ER
UL-94
FK330309
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3 Marking Symbol : 1.2 1.6 Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant
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TT4-EA-14570
FC694308ER
UL-94
FK330308
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mtm861270
Abstract: MTM86127 mtm13127
Text: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features Marking Symbol : MK 1.4 1.6 Low Drain-source On-state Resistance : RDS on typ = 80 m (VGS = -4 V)
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TT4-EA-10304
MTM861270LBF
MTM13127
UL-94
mtm861270
MTM86127
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IRFH7911
Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
Text: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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7427A
IRFH7911PbF
IRFH7911
IRFH7911TRPBF
W5337
AN1152
FET MARKING CODE
FET MARKING QG
marking JE FET
PQFN footprint
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Untitled
Abstract: No abstract text available
Text: PD - 97427 IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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IRFH7911PbF
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AN1152
Abstract: No abstract text available
Text: PD - 97427C IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) : Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits
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97427C
IRFH7911PbF
IRFH7911TRPBF
IRFH7911TR2PBF
PQ5/2011
AN-1152
AN-1136
AN1152
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Untitled
Abstract: No abstract text available
Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' * 1& 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters
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97427D
IRFH7911PbF
AN-1152
AN-1136
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IRFH7911TRPBF
Abstract: No abstract text available
Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' 1& * 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters
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97427D
IRFH7911PbF
IRFH7911TRPBF
IRFH7911TR2PBF
x5/2011
AN-1152
AN-1136
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4253DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4251DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4253DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4251DPbF
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IRFH7911TRPBF
Abstract: No abstract text available
Text: PD - 97427B IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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97427B
IRFH7911PbF
IRFH7911TRPBF
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