Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FERROELECTRIC Search Results

    FERROELECTRIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MSP430FR2632IYQWT Texas Instruments 16 MHz Ultra-Low-Power Microcontroller With 8 KB FRAM, CapTIvate touch technology 24-DSBGA -40 to 85 Visit Texas Instruments Buy
    MSP430FR6005IPZR Texas Instruments Ultrasonic Sensing MCU with 128KB FRAM, 8KB RAM, LCD for water meters Visit Texas Instruments Buy
    MSP430FR6007IPZR Texas Instruments Ultrasonic Sensing MCU with 256KB FRAM, 8KB RAM, LCD for water meters Visit Texas Instruments Buy
    MSP430FR2632IYQWR Texas Instruments 16 MHz Ultra-Low-Power Microcontroller With 8 KB FRAM, CapTIvate touch technology 24-DSBGA -40 to 85 Visit Texas Instruments Buy
    MSP430FR2632IRGER Texas Instruments 16 MHz Ultra-Low-Power Microcontroller With 8 KB FRAM, CapTIvate touch technology 24-VQFN -40 to 85 Visit Texas Instruments Buy

    FERROELECTRIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25CL64B-GA

    Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
    Text: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25CL64B FM25CL64B MS-012 FM25CL64B, L3502G1, 25CL64BGA AL3502G1 RIC1104 25CL64B-GA 25cl64 FM25CL64B-Ga

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g

    rg5H20

    Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
    Text: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25H20 rg5H20 fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G

    1822-HEX

    Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
    Text: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with


    Original     		PDF HM71V832 32768-word 32k-word HM71V832-15 HM71V832FP FP-28DA) HM71V832T TFP-28DB) 1822-HEX HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00013-6v0-E MB85RC64V MB85RC64V

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		PDF MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-4v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00015-4v0-E MB85RS64V MB85RS64V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00023-1v0-E MB85RS2MT MB85RS2MT

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48)

    MB85RS1MT

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00022-2v0-E MB85RS1MT MB85RS1MT

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00021-2v0-E MB85RC128A MB85RC128A 128K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00008-6v0-E MB85RS128A MB85RS128A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00025-1v0-E FRAM MB85RS2MT MB85RS2MT is a 2M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the


    Original     		PDF NP501-00025-1v0-E MB85RS2MT MB85RS2MT DIP-8P-M03)

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00010-7v0-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC64 MB85RC64

    Untitled

    Abstract: No abstract text available
    Text: FM22L16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM22L16 151-year 25-ns 55-ns 110-ns

    Untitled

    Abstract: No abstract text available
    Text: FM24CL16B 16-Kbit 2 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM24CL16B 16-Kbit 256-Kbit 16-Kbit 151-year FM24CL16B

    Untitled

    Abstract: No abstract text available
    Text: FM24V05 512-Kbit 64 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM24V05 512-Kbit 256-Kbit 512-Kbit 151-year FM24V05

    Untitled

    Abstract: No abstract text available
    Text: FM31276/FM31278 64-Kbit/256-Kbit Integrated Processor Companion with F-RAM 256-Kbit 32 K x 8 Serial (SPI) F-RAM Features • ■ ■ ■ ■ 64-Kbit/256-Kbit ferroelectric random access memory (F-RAM) ❐ Logically organized as 8 K × 8 (FM31276) / 32 K × 8


    Original     		PDF FM31276/FM31278 64-Kbit/256-Kbit 256-Kbit FM31276) FM31278) 151-year 16-bit

    Untitled

    Abstract: No abstract text available
    Text: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original     		PDF FM1608B 64-Kbit 64-Kbit 151-year 70-ns 130-ns

    GN02018B

    Abstract: No abstract text available
    Text: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply


    OCR Scan     		PDF GN02018B 820MHz 950MHz, -10dBm -30dBm GN02018B

    GN01037B

    Abstract: No abstract text available
    Text: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment IE • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz 3 tn


    OCR Scan     		PDF GN01037B 95GHz -20dBm 50kHz GN01037B