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    FDZ2554PZ Price and Stock

    Rochester Electronics LLC FDZ2554PZ

    MOSFET 2P-CH 20V 6.5A 18BGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDZ2554PZ Bulk 468
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.64
    • 10000 $0.64
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    Fairchild Semiconductor Corporation FDZ2554PZ

    Power Field-Effect Transistor, 6.5A, 20V, 0.028ohm, 2-Element, P-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDZ2554PZ 11,960 1
    • 1 $0.6176
    • 10 $0.6176
    • 100 $0.5805
    • 1000 $0.525
    • 10000 $0.525
    		Buy Now

    FDZ2554PZ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDZ2554PZ Fairchild Semiconductor Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET Original PDF
    FDZ2554PZ Fairchild Semiconductor Monolithic Common Drain P-Channel 2.5 V Specified PowerTrench BGA MOSFET Original PDF

    FDZ2554PZ Datasheets Context Search

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    FDZ2554P

    Abstract: FDZ2554PZ
    Text: FDZ2554PZ Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space


    Original     		PDF FDZ2554PZ FDZ2554PZ FDZ2554P

    FDZ2554P

    Abstract: FDZ2554PZ
    Text: FDZ2554PZ Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space


    Original     		PDF FDZ2554PZ FDZ2554PZ FDZ2554P

    Untitled

    Abstract: No abstract text available
    Text: FDZ2554PZ Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space


    Original     		PDF FDZ2554PZ FDZ2554PZ

    Untitled

    Abstract: No abstract text available
    Text: FDZ2554PZ Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space


    Original     		PDF FDZ2554PZ FDZ2554PZ

    Untitled

    Abstract: No abstract text available
    Text: FDZ2554PZ Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space


    Original     		PDF FDZ2554PZ FDZ2554PZ

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    EQUIVALENT fds4435

    Abstract: MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ
    Text: Handset Batteries May 2003 One of the key components in the battery pack protection circuit is the MOSFET switch. The current handling capability, number of cells used, and environmental constraints greatly determine the specifications for this switch. Options for ESD protection devices integrated with the


    Original     		PDF SC70-6, FDG6316P FDC6318P FDW2508P FDZ2554PZ FDZ2552P FDG6304P FDG6306P FDG6308P FDS6875 EQUIVALENT fds4435 MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ

    600V igbt dc to dc buck converter

    Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
    Text: Highly Integrated Off-Line Power Switch 1 The FS6X1220RT Fairchild Power Switch FPS is a highly integrated offline power switch for DC/DC forward or fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (200V minimum


    Original     		PDF FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent

    bz71

    Abstract: BZ5.2 AZ51 FDZ201N FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553NZ Fairchild wafer fab
    Text: Date Created: 4/20/2004 Date Issued: 5/10/2004 PCN # 20040502-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0040502-A 300um 200um FDZ201N FDZ204P FDZ209N FDZ2551N FDZ2553NZ FDZ2555NZ FDZ3547N bz71 BZ5.2 AZ51 FDZ201N FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553NZ Fairchild wafer fab

    Eftec

    Abstract: FDZ197 FDZ203N FDZ206P FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ299P gem 65
    Text: Date Created: 1/29/2004 Date Issued: 3/2/2004 PCN # 20040502 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF 02XD24 FDZ197P FDZ203N FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ298N FDZ5047N FDZ201N Eftec FDZ197 FDZ203N FDZ206P FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ299P gem 65

    FDZ201N

    Abstract: FDZ202P FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553N FDZ2553NZ FDZ2554PZ FDZ5047N
    Text: Date Created: 12/30/2003 Date Issued: 2/2/2004 PCN # 20040001 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF FDZ201N FDZ204P FDZ209N FDZ2553N FDZ2554PZ FDZ5047N FDZ202P FDZ206P FDZ2551N FDZ2553NZ FDZ201N FDZ202P FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553N FDZ2553NZ FDZ2554PZ FDZ5047N

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08