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    F106 Search Results

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    F106 Price and Stock

    Samsung Electro-Mechanics CL31F106ZPHNNNE

    CAP CER 10UF 10V Y5V 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CL31F106ZPHNNNE Cut Tape 185,734 1
    • 1 $0.17
    • 10 $0.095
    • 100 $0.0577
    • 1000 $0.03817
    • 10000 $0.03817
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    CL31F106ZPHNNNE Digi-Reel 185,734 1
    • 1 $0.17
    • 10 $0.095
    • 100 $0.0577
    • 1000 $0.03817
    • 10000 $0.03817
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    CL31F106ZPHNNNE Reel 184,000 2,000
    • 1 -
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    • 10000 $0.02224
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    PanJit Group PCDF1065G1_T0_00601

    650V/10A THROUGH HOLE SILICON CA
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    DigiKey PCDF1065G1_T0_00601 Tube 2,000 1
    • 1 $5.82
    • 10 $5.82
    • 100 $5.82
    • 1000 $2.77188
    • 10000 $2.77188
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    SMC Diode Solutions MBRF1060CTP

    DIODE ARR SCHOTT 60V ITO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRF1060CTP Tube 800 1
    • 1 $0.77
    • 10 $0.77
    • 100 $0.77
    • 1000 $0.25605
    • 10000 $0.20025
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    TME MBRF1060CTP 1
    • 1 $0.456
    • 10 $0.408
    • 100 $0.308
    • 1000 $0.245
    • 10000 $0.245
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    Harwin M80-FC305F1-06-0450L

    CBL ASS RG178 FMALE 450MM 6POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M80-FC305F1-06-0450L Bag 139 1
    • 1 $125.41
    • 10 $102.249
    • 100 $125.41
    • 1000 $125.41
    • 10000 $125.41
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    ITT Interconnect Solutions KPSE00F10-6S

    26482 - STYLE SERIES I & MIL BAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KPSE00F10-6S Bag 45 1
    • 1 $60.17
    • 10 $49.051
    • 100 $41.7625
    • 1000 $41.7625
    • 10000 $41.7625
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    RS KPSE00F10-6S Bulk 45 34 Weeks 1
    • 1 $26.91
    • 10 $26.91
    • 100 $26.91
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    Avnet Abacus KPSE00F10-6S 15 Weeks 25
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    Find more F106 price and stock on Findchips.com

    F106 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F1-06 Weinschel Fixed Coaxial Attenuator Original PDF
    F106 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    F1-06 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    F1060 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F1060 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F10-600 Triad Magnetics Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE Original PDF
    F10-600 MagneTek Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSFORMER, SPLIT BOBBIN, PC MOUNT, SINGLE PRIMARY, 6.0VA, 10.0V CT Scan PDF
    F10-600-C2 Triad Magnetics Transformers - Power Transformers - XFRMR LAMINATED 6VA THRU HOLE Original PDF
    F10-600-C2-B Triad Magnetics Power Transformers, Transformers, XFRMR LAMINATED 6VA THRU HOLE Original PDF
    F10610 Fairchild Semiconductor Dual 3-3 OR, Dual 3-3 NOR Original PDF
    F10611 Fairchild Semiconductor Dual 3-3 OR, Dual 3-3 NOR Original PDF
    F1063 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F10631 Fairchild Semiconductor High Speed Dual D Flip-Flop Original PDF
    F1065 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F1066 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F1069 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F10693-000 TE Connectivity Raychem Cable Protection Cables, Wires - Management - Accessories - INSULATION SLEEVE Original PDF
    F-106Z Triad Magnetics Transformers - Power Transformers - POWER XFMR CHASSIS MOUNT W/LUGS Original PDF
    F-106Z MagneTek Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transformer, Control, Chassis Mt., 24VA, [email protected], [email protected], lugs Scan PDF

    F106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB9BF104NA

    Abstract: MB9BF105RA MB9BF104N MB9BF106N
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00020-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B100A Series MB9BF102NA/RA, F104NA/RA, F105NA/RA, F106NA/RA DESCRIPTION This series are a highly integrated 32-bit microcontroller that target for high-performance and cost-sensitive


    Original     		PDF DS706-00020-1v0-E 32-bit MB9B100A MB9BF102NA/RA, F104NA/RA, F105NA/RA, F106NA/RA MB9BF104NA MB9BF105RA MB9BF104N MB9BF106N

    Solar Inverters

    Abstract: No abstract text available
    Text: 10-F106NIA150SA-M136F flowNPC 1 600V/150A flow1 housing Features ● Neutral-point-Clamped inverter ● Compact flow1 housing ● Low Inductance Layout Target Applications Schematic ● UPS ● Motor Drive ● Solar inverters Types ● 10-F106NIA150SA-M136F


    Original     		PDF 10-F106NIA150SA-M136F 00V/150A Solar Inverters

    F1063

    Abstract: No abstract text available
    Text: polyfet rf devices F1063 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1063 F1063

    MB95F108Am

    Abstract: 108AMW MB95100AM
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12614-3E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / /


    Original     		PDF DS07-12614-3E MB95100AM /F104ANS/F104AJS/F106AMS/F106ANS/F106AJS/ /F108AJS/F104AMW/F104ANW/F104AJW/F106AMW/ 106AJW/F108AMW/F108ANW/F108AJW/FV100D-103 16-bit MB95F108Am 108AMW

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00007-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller FM3 MB9B100 Series MB9BF104N/R, F105N/R, F106N/R  DESCRIPTION The MB9B100 Series are a highly integrated 32-bit microcontroller that target for high-performance and


    Original     		PDF DS706-00007-1v0-E 32-bit MB9B100 MB9BF104N/R, F105N/R, F106N/R Copyright2010-2011

    Microcontrollers

    Abstract: MB95100AM MB95F104AJSPMC
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12614-5E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / /


    Original     		PDF DS07-12614-5E MB95100AM /F104ANS/F104AJS/F106AMS/F106ANS/F106AJS/ /F108AJS/F104AMW/F104ANW/F104AJW/F106AMW/ 106AJW/F108AMW/F108ANW/F108AJW/FV100D-103 16-bit Microcontrollers MB95F104AJSPMC

    F1060

    Abstract: ldmos
    Text: polyfet rf devices F1060 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1060 F1060 ldmos

    Untitled

    Abstract: No abstract text available
    Text: F106R6A050SB target datasheet flowPACK 1 600V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT3 technology Target Applications Schematic ● Power Regeneration Types ● 10-F106R6A050SB-M435E08 ● 10-F106R6A050SB01-M435E18


    Original     		PDF F106R6A050SB 00V/50A 10-F106R6A050SB-M435E08 10-F106R6A050SB01-M435E18

    F1065

    Abstract: F-1065
    Text: polyfet rf devices F1065 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1065 F1065 F-1065

    BGA224

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12614-1E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / / MB95FV100D-103 • DESCRIPTION


    Original     		PDF DS07-12614-1E MB95100AM /F104ANS/F106AMS/F106ANS/F108AMS/F108ANS/ /F104ANW/F106AMW/F106ANW/F108AMW/F108ANW/ MB95FV100D-103 16-bit F0609 BGA224

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12614-6E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / /


    Original     		PDF DS07-12614-6E MB95100AM /F104ANS/F104AJS/F106AMS/F106ANS/F106AJS/ /F108AJS/F104AMW/F104ANW/F104AJW/F106AMW/ 106AJW/F108AMW/F108ANW/F108AJW/FV100D-103 16-bit

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00020-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B100A Series MB9BF102NA/RA, F104NA/RA, F105NA/RA, F106NA/RA DESCRIPTION This series are a highly integrated 32-bit microcontroller that target for high-performance and cost-sensitive


    Original     		PDF DS706-00020-1v0-E 32-bit MB9B100A MB9BF102NA/RA, F104NA/RA, F105NA/RA, F106NA/RA

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12614-2Ea 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / /


    Original     		PDF DS07-12614-2Ea MB95100AM /F104ANS/F104AJS/F106AMS/F106ANS/F106AJS/ /F108AJS/F104AMW/F104ANW/F104AJW/F106AMW/ 106AJW/F108AMW/F108ANW/F108AJW/FV100D-103 16-bit

    F1069

    Abstract: No abstract text available
    Text: polyfet rf devices F1069 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1069 F1069

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12614-6E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / /


    Original     		PDF DS07-12614-6E MB95100AM /F104ANS/F104AJS/F106AMS/F106ANS/F106AJS/ /F108AJS/F104AMW/F104ANW/F104AJW/F106AMW/ 106AJW/F108AMW/F108ANW/F108AJW/FV100D-103 16-bit

    Untitled

    Abstract: No abstract text available
    Text: 10-F106BIB020FK-M285L target datasheet flowBoost1 600V/20mΩ Features flow1 housing ● High efficiency symmetric boost ● Ultra fast switching frequency Target Applications Schematic ● Input stage for solar inverter Types ● 10-F106BIB020FK-M285L Maximum Ratings


    Original     		PDF 10-F106BIB020FK-M285L 00V/20mâ

    F10210

    Abstract: F10211 F10610 F10611
    Text: F10210 F10211l/» F10610"* F10611 DUAL 3-3 OR • DUAL 3-3 NOR FlOK VOLTAGE COMPENSATED ECL GENERAL DESCRIPTION — The F10210 and F10610 are Dual 3-Input 3-O utput OR Gates and the F10211 and F10611 are Dual 3-Input 3-O utput NOR Gates. Each gate has three output transistors driven in parallel, with their emitters brought out on


    OCR Scan     		PDF F10210 Vl02111/* F10611 F10210and F10610 F10211 F10611 wir-38 F10210

    ilh25

    Abstract: No abstract text available
    Text: F10231 • F10631 HIGH SPEED DUAL D FLIP-FLOP F10K VOLTAGE COMPENSATED ECL DESCRIPTION - The F10231/F10631 contains two master/slave D-type flip-flops. The internal clock is the OR of two clock inputs, one common to both flip-flops. The OR clock permits the use of one input as a clock pulse and the other as an active LOW enable.


    OCR Scan     		PDF F10231 F10631 F10231/F10631 ilh25

    Untitled

    Abstract: No abstract text available
    Text: F10210 • F10211 • F10610 • F10611 DUAL 3-3OR • DUAL 3-3 NOR F10K VOLTAGE COMPENSATED ECL GENERAL DESCRIPTION — The F10210 and F10610 are Dual 3-Input 3-O utput OR Gates and the F10211 and F10611 are Dual 3-Input 3-O utput NOR Gates. Each gate has three output transistors driven in parallel, with their emitters brought out on


    OCR Scan     		PDF F10210 F10211 F10610 F10611 F10210 F10610 F10211 F10611

    Untitled

    Abstract: No abstract text available
    Text: polyfet if devices F1069 PATENTED GOLD METALIZED General Description Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F1069

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1066 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F1066 7B4100C

    02NG

    Abstract: F10231 F10631
    Text: F102311^ F10631^ HIGH SPEED DUAL D FLIP-FLOP F10K VOLTAGE COMPENSATED ECL DESCRIPTION - The F10231/F10631 contains two master/slave D-type flip-flops. The internal clock is the OR of two clock inputs, one common to both flip-flops. The OR clock permits the use of one input as a clock pulse and the other as an active LOW enable.


    OCR Scan     		PDF F10231^ F10631^ F10231/F10631 1x222 02NG F10231 F10631

    Untitled

    Abstract: No abstract text available
    Text: F10210 F10211l/» F10610^ F l O ô l l ^ DUAL 3-3 OR • DUAL 3-3 NOR F10K VOLTAGE COMPENSATED ECL GENERAL DESCRIPTION — The F10210 and F10610 are Dual 3-lnput 3-Output OR Gates and the F10211 and F10611 are Dual 3-Input 3-Output NOR Gates. Each gate has three output transistors driven in parallel, with their emitters brought out on


    OCR Scan     		PDF F10210 F10211l F10610^ F10210 F10610 F10211 F10611

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


    OCR Scan     		PDF F1063 1110AvenidaAcaso,