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    EUDYNA GAAS FET RF TRANSISTOR Search Results

    EUDYNA GAAS FET RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    EUDYNA GAAS FET RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FHX02X

    Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt

    FHR02X

    Abstract: FHX02X GaAs FET HEMT Chips
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		PDF FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips

    eudyna GaAs FET RF Transistor

    Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz eudyna GaAs FET RF Transistor high frequency transistor ga as fet transistor on 4959 eudyna fet

    eudyna GaAs FET RF Transistor

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz eudyna GaAs FET RF Transistor

    GaAs FET HEMT Chips

    Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		PDF FHX35X 12GHz FHX35X 2-18GHz Pow4888 GaAs FET HEMT Chips FHX35 eudyna GaAs FET RF Transistor

    Untitled

    Abstract: No abstract text available
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		PDF FHX35X 12GHz FHX35X 2-18GHz

    fujitsu hemt

    Abstract: FHX35X rm 702 627
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		PDF FHX35X 12GHz FHX35X 2-18GHz Power4888 fujitsu hemt rm 702 627

    FHX45X

    Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt

    fet 741

    Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate
    Text: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)


    Original     		PDF P0120002P 250mW 41dBm OT-89 P0120002P fet 741 P0110002P KP022J RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate

    KP027J

    Abstract: P0120007P RR0816
    Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120007P 250mW 41dBm OT-89 P0120007P KP027J RR0816

    P0110003P

    Abstract: P0120003P ISO-14001 KP023J RR0816 GaAS fet sot89
    Text: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120003P 800mW 43dBm OT-89 P0120003P P0110003P ISO-14001 KP023J RR0816 GaAS fet sot89

    eudyna transistors catalog

    Abstract: ISO-14001 KP024J P0120004P RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028
    Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		PDF P0120004P 45dBm OT-89 P0120004P eudyna transistors catalog ISO-14001 KP024J RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028

    P012

    Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120008P 43dBm OT-89 P0120008P P012 ISO-14001 KP028J RR0816 marking c7 sot-89

    P0110009P

    Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
    Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120009P 48dBm OT-89 P0120009P P0110009P Susumu RL series part Marking KP029J RR0816 marking c7 sot-89

    FHX04X

    Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


    Original     		PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X FHX04 FHX05X GaAs FET HEMT Chips hemt low noise die

    FHX04

    Abstract: FHX04X FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


    Original     		PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04 FHX04X FHX05X GaAs FET HEMT Chips hemt low noise die

    Untitled

    Abstract: No abstract text available
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz

    Untitled

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) FHX14X 2-18GHz

    FHX45X

    Abstract: GaAs FET HEMT Chips GaAs FET chip
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz GaAs FET HEMT Chips GaAs FET chip

    FHX13X

    Abstract: FHX13 FHX14X 564 fet eudyna GaAs FET RF Transistor power amplifier 2-18GHZ high power FET transistor s-parameters high power transistor s-parameters GaAs FET HEMT Chips
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) FHX14X 2-18GHz FHX13X FHX13 564 fet eudyna GaAs FET RF Transistor power amplifier 2-18GHZ high power FET transistor s-parameters high power transistor s-parameters GaAs FET HEMT Chips