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    EQUIVALENT OF SL 100 NPN TRANSISTOR Search Results

    EQUIVALENT OF SL 100 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT OF SL 100 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF450A equivalent

    Abstract: No abstract text available
    Text: , Line. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 MRF450 MRF450A The RF Line SOW -30 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for power amplifier applications in industrial, commercial and amateur radio equ ipment to 30 MHz.


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    PDF MRF450 MRF450A 13Adc f-30MH: f-30MHz) 30MHz) 56j8ft MRF450A equivalent

    equivalent of SL 100 NPN Transistor

    Abstract: SRC1204 SUR543EF
    Text: SUR543EF Epitaxial planar NPN silicon transistor Descriptions • Dual chip digital transistor Features • Two SRC1204 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Package : SOT-563F Ordering Information


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    PDF SUR543EF SRC1204 OT-563F OT-563F KSD-R5U010-001 equivalent of SL 100 NPN Transistor SUR543EF

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    Abstract: No abstract text available
    Text: SUR543EF Epitaxial planar NPN silicon transistor Descriptions • Dual chip digital transistor Features • Two SRC1204 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Package : SOT-563F Ordering Information


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    PDF SUR543EF SRC1204 OT-563F OT-563F KSD-R5U010-001

    transistor sd 965

    Abstract: 2n3996 equivalent transistor T1 SL 100 NPN Transistor 2N3996 equivalent of SL 100 NPN Transistor TRANSISTOR SL 100 2N3997 2N3998 2N3999 190-32 UNF-2a
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR


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    PDF MIL-PRF-19500/374 2N3996 2N3997 2N3998 2N3999 2N3998 T4-LDS-0165 transistor sd 965 2n3996 equivalent transistor T1 SL 100 NPN Transistor 2N3996 equivalent of SL 100 NPN Transistor TRANSISTOR SL 100 2N3997 2N3999 190-32 UNF-2a

    2n3996 equivalent transistor

    Abstract: transistor sd 965
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR


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    PDF MIL-PRF-19500/374 2N3996 2N3997 2N3998 2N3999 2N3998 T4-LDS-0165 2n3996 equivalent transistor transistor sd 965

    Untitled

    Abstract: No abstract text available
    Text: , Unc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RF Power Transistors 2N5090 High-Power Silicon N-P-N Overlay Transistor High-Gain Type for Class A, B, or C Operation in VHF/UHF Circuits


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    PDF 2N5090 50ffl 92SS-3620R2

    equivalent of SL 100 NPN Transistor

    Abstract: No abstract text available
    Text: SUR543EF Semiconductor Epitaxial planar NPN silicon transistor Descriptions • Dual chip digital transistor Features • Two SRC1204 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information


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    PDF SUR543EF SRC1204 OT-563F SUR543EF OT-563F KSD-R5U010-000 KSD-R5U010-000 equivalent of SL 100 NPN Transistor

    equivalent of SL 100 NPN Transistor

    Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA


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    PDF M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR

    simple SL 100 NPN Transistor

    Abstract: wwvb DCF77 T4225B T4225B-MC T4225B-MF T4225B-MW dcf receiver time code receiver dcf
    Text: T4225B Time Code Receiver Description The T4225B is a bipolar integrated straight through receiver circuit in the frequency range of 40 to 80 kHz. The device is designed for radio controlled clock applications. Features D D D D Very low power consumption D Only a few external components necessary


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    PDF T4225B T4225B 18-Mar-96 T422e D-74025 simple SL 100 NPN Transistor wwvb DCF77 T4225B-MC T4225B-MF T4225B-MW dcf receiver time code receiver dcf

    01903

    Abstract: diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 September 1999. INCH-POUND MIL-PRF-19500/315F 30 June 1999 SUPERSEDING MIL-S-19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER


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    PDF MIL-PRF-19500/315F MIL-S-19500/315E 2N2880, 2N3749, MIL-PRF-19500. 01903 diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor

    sl 1008 transistor

    Abstract: LOW khz receiver 77,5kHz ic 8279 SL 100 NPN Transistor ic 8279 block diagram Block Diagram of 8279 dcf CLOCK equivalent of SL 100 NPN Transistor ferrite antenna ic chip 7727
    Text: U4224B TELEFUNKEN Semiconductors Time Code Receiver Description The U 4224 B is a bipolar integrated straight through receiver circuit in the frequency range of 40 to 80 kHz. The device is designed for radio controlled clock applications. Features D Only a few external components necessary


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    PDF U4224B D-74025 sl 1008 transistor LOW khz receiver 77,5kHz ic 8279 SL 100 NPN Transistor ic 8279 block diagram Block Diagram of 8279 dcf CLOCK equivalent of SL 100 NPN Transistor ferrite antenna ic chip 7727

    U4224B

    Abstract: ic 8279 dcf77 antenna loop Time Code Receiver T4224 ferrite antenna DCF77 T4224B-CC T4224B-CF transistor sl 100
    Text: U4224B Time Code Receiver Description The U4224B is a bipolar integrated straight through receiver circuit in the frequency range of 40 to 80 kHz. The device is designed for radio controlled clock applications. Features D D D D Very low power consumption D Only a few external components necessary


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    PDF U4224B U4224B 02-Apr-96 D-74025 ic 8279 dcf77 antenna loop Time Code Receiver T4224 ferrite antenna DCF77 T4224B-CC T4224B-CF transistor sl 100

    equivalent of SL 100 NPN Transistor

    Abstract: simple SL 100 NPN Transistor SL 100 NPN Transistor transistor C 547 DTC114YUA
    Text: DTC114YE DTC114YUA DTC114YKA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC114YE (EMT3) package marking: DTC114YE, DTC114YUA, and DTC114YKA; 64 a built-in bias resistor allows inverter


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    PDF DTC114YE DTC114YUA DTC114YKA SC-70) SC-59) DTC114YE, DTC114YUA, DTC114YKA; DTC114YE DTC114YUA equivalent of SL 100 NPN Transistor simple SL 100 NPN Transistor SL 100 NPN Transistor transistor C 547

    equivalent of SL 100 NPN Transistor

    Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"
    Text: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage


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    PDF KSD5005 GQG77fe equivalent of SL 100 NPN Transistor Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"

    equivalent of SL 100 NPN Transistor

    Abstract: No abstract text available
    Text: OPTEK Product Bulletin OP8OOSL June 1996 NPN Silicon Phototransistors Types OP8QOSL, QP801SL, OP8Q2SL, OP8Q3SL, OP8Q4SL, OP8Q5SL Features • Narrow receiving angle • Variety of sensitivity ranges • Enhanced temperature range • TO-18 hermetically sealed package


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    PDF QP801SL, OP231 equivalent of SL 100 NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4250 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE d ? 5 Í1 TV VHF MIXER APPLICATIONS. Unit in mm 2.1 ± 0.1 • High Conversion Gain : Gce = 25dB Typ. • Low Reverse Transfer Capacitance : Cre = 0.45pF (Typ.) 1.25±0.1 oo + 1 1 - MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC4250 SC-70 50MHz -jl50 --j50

    c237p

    Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r


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    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES D iffused em itter ballasting resistors providing excellent cu rre n t sharing


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    PDF LLE18040X 125002/00/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN5002 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5002 MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. U nit in mm POWER SWITCHING APPLICATIONS. 4 .6 M A X . 1,6 MAX. 0 .4 ± 0 .0 5 1.7 MAX. W ith Built-in Bias Resistors


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    PDF RN5002 RN6002

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2480 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2480 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS 8.0 ± 0.2 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hjrjr; = 2000 (Min.) •


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    PDF 2SD2480

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1 .2 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code


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    PDF 900MHz Q62702-F1315 OT-23 053SbDS BFR182 6235b05

    3003a power transistor

    Abstract: No abstract text available
    Text: Ordering n u m b e r:EN 783B I SA N Y O LB1272 N 0 .7 83 B M o n o lith ic D ig it a l IC 6-Unit, Darlington Transistor Array The circuit configuration of this IC is a 6-u nit Darlington transistor array consisting of NPN transistors and is ideally suited for use in printer ham mer driving, lamp or relay driving applications.


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    PDF LB1272 18-digit DIP20H DIP16F FP30S 3003a power transistor

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Untitled

    Abstract: No abstract text available
    Text: RN1112,RN1113 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1112, RN1113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors


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    PDF RN1112 RN1113 RN1112, RN2112, RN2113