em 518 diode
Abstract: em 513 diode diode em 513 diode 1600 rectifier
Text: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A
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em 518 diode
Abstract: em 513 diode diode em 513 diode 513 diode 518 EM518
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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Untitled
Abstract: No abstract text available
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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diode em 513
Abstract: em 518 diode
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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Untitled
Abstract: No abstract text available
Text: EM513 thru EM518 Pb Free Plating Product Pb EM513 thru EM518 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch mm Features • Low leakage • Low forward voltage drop • High current capability .034(.86) .028(.71) 1.0(25.4)MIN. Low cost
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EM513
EM518
DO-41
DO-41
MIL-STD-202
1260WAVE
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DIODE RK 69
Abstract: BA rx transistor 111-BA ba rx varistor 741 CD 741 741 CN abb combiflex rtxe em 513 diode
Text: RTXE Component blocks COMBIFLEX 1MRK 513 019-BEN Page 1 Issued: September 2004 Revision: A Data subject to change without notice SE820256 Features • Requires no extra space. • For use in protection and control systems • To be mounted at the rear of the terminal
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019-BEN
SE820256)
SE-721
DIODE RK 69
BA rx transistor
111-BA
ba rx
varistor 741
CD 741
741 CN
abb combiflex
rtxe
em 513 diode
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ABB racif
Abstract: 004-BEN 111-BA RK 723 007 capacitor trip unit 1MRK 514 001-BEN abb combiflex combiflex varistor 741 c32 circuit breaker
Text: Relay accessories and components COMBIFLEX 1MRK 513 004-BEN Page 1 Issued July 1998 Changed since June 1997 Data subject to change without notice SE 82 02 64 Features (SE 82 02 94) • Modular size or component block • For use in protection and control systems
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004-BEN
transie27
-20oC
S-721
101-AB
ABB racif
004-BEN
111-BA
RK 723 007
capacitor trip unit
1MRK 514 001-BEN
abb combiflex
combiflex
varistor 741
c32 circuit breaker
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SMD DIODE 513
Abstract: No abstract text available
Text: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V
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1N4001.
1N4007,
1N4007-1300
DO-41
UL94V-0
40eel
R0D1RS14
000017S
SMD DIODE 513
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IN 4004 diodes
Abstract: IN4007 IN 5408 IN 4007 IN4004 IN4003 IN-4001 by 228 v IN5402 IN4001
Text: h LGSAGrlBB RECTIFIER DIODES Mains frequency diodes Type us Case JEDEC 1.0 <5.0 DO-15 If a v If s m (A) (A) VF (V) IN 4001 IN 4002 IN 4003 IN 4004 IN 4005 IN 4006 IN 4007 BY 133 EM 513 EM 516 50 100 200 400 600 800 1000 1300 1600 1800 1.1 50 <1.2 1.0 50
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DO-15
D0-201
T0-220
DO-218
T004524
IN 4004 diodes
IN4007
IN 5408
IN 4007
IN4004
IN4003
IN-4001
by 228 v
IN5402
IN4001
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keyboard to DTMF
Abstract: "tone generator" PCD3315P PCD3315T S028 two Tone generator dtmf
Text: Philips Sem iconductors ^ bb53^EM □ 0 7 cì]i51 Repertory pulse dialler with redial ' NAPC/PHILIPS SEMICOND flTb WSIC3 O bjective specification PCD3315/512; PCD3315/513 b3E D — FEATURES ^ • • DTMF tone/pause 70/70 or 100/100 ms PCD3315/512 • Redial
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PCD3315/512)
PCD3315/512
PCD3315/513
PCD3312A.
PCD3315P
OT117
PCD3315T
OT136A
keyboard to DTMF
"tone generator"
S028
two Tone generator
dtmf
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Text: 1-18 C o u p le d C h a ra c te ris tic s M ax R a ting s @ T * = 25°C T ra n s is to r D e vice No. O u tp u t PD •c mW mA v CEO V M in C u rre n t T ra n s fe r Ratio Diode Vf? V 'f mA v iSO kV ic ^ F % @>F mA @ Vc e V FCD830D<2> Trans 250 25 30 3.0 60
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FCD836Â
FCD836DÂ
FCD850
FCD850C
FCD850D
Darl65D
FCD860,
FCD860C
FCD865,
FCD865C
FCD836
FCD836D
FCD855
FCD855C
FCD855D
FCD860
FCD865
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Text: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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FCD836Â
FCD836DÂ
FCD850
FCD850C
FCD850D
FCD850C,
FCD855C
FCD850D,
FCD855D
FCD836
FCD836D
FCD855
FCD860
FCD865
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Text: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Transistor Device No. Output PD •c v CEO mW mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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FCD836Â
FCD836DÂ
FCD850
FCD850C
FCD850D
FCD831
FCD831A
FCD831B
FCD831C
FCD831D
FCD836
FCD836D
FCD855
FCD855C
FCD855D
FCD860
FCD865
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mst 702 lf
Abstract: OLD232 INFRARED DIODES OLD232-2 light emitting diode general 910nm
Text: OKI electronic components OLP232-2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light em ission m icro-diode sealed w ith a glass lens in a highly reliable metal can on a TO-46 type stem . Its light em ission w a v e peaks at 910 nm.
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OLD232-2
OLD232-2
mst 702 lf
OLD232
INFRARED DIODES
light emitting diode general
910nm
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Untitled
Abstract: No abstract text available
Text: O K I electronic OLD232-2 components GaAIAs Infrared Light Emitting Diode G EN ERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light emission micro-diode sealed with a glass lens in a highly reliable metal can on a TO-46 type stem . Its light emission wave peaks at 910 nm.
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OLD232-2
OLD232-2
b72424G
2424D
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Untitled
Abstract: No abstract text available
Text: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.
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I50F-060
I75F-060
2MBI100F-060
2MBI50L-060
2MBI75L-060
2MBI100L-060
2MBI150L-060
2MBI150LB-060
2MBI200L-060
2MBI200LB-060
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am29701
Abstract: AM27S06 AM27S07 AM27S06ADC AM27S06ADM AM27S06AFM AM27S06APC AM27S07ADC AM27S07ADM AM27S07AFM
Text: Am27S06 • Am27S07 Non-Inverting Schottky 64-Bit Random Access Memories D IS T IN C T IV E C H A R A C TER IS TIC S F U N C T IO N A L DESCRIPTIO N • • • • The A m 2 7 S 0 6 and Am 27S 07 are 6 4 -b it R A M s b u ilt using S c h o ttk y diode clam ped transistors in c o n ju n c tio n w ith in ternal EC L c irc u itry
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Am27S06
Am27S07
64-Bit
16-word
MIL-STD-883
am29701
AM27S06ADC
AM27S06ADM
AM27S06AFM
AM27S06APC
AM27S07ADC
AM27S07ADM
AM27S07AFM
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20N60C3DR
Abstract: No abstract text available
Text: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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HGTG20N60C3DR
330ns
20N60C3DR
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Untitled
Abstract: No abstract text available
Text: > « fc ç ô M Preliminary Specification m a n A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V 2.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, M ultilayer Metalization with a Diffusion
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MIL-S-883
MA4E2500
MA4E2500L
MA4E2544L
MA4E2545L
MA4E2514L
MA4E2515L
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PMD 1000
Abstract: PMD19D100
Text: S E H T EC H CORP 5ÔE D • filB'ïlB'i Q Q 0 3 EÔ 0 0Tb « S E T 300 WATT 50 AM P CONTINUOUS, 100 AM P PEAK ABSOLUTE MAXIMUM RATINGS SYM BO L PARAM ETER M AXIM U M UNITS Vdc O Collector Emitter Voltage PM D18D, PM 019 D 80 PMD18D, PMD19D100 f 80 100 Collector Base Voltage
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PMD18D,
PMD19D100
PMD19D80
PMD 1000
PMD19D100
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BD 650
Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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SDL-5311-G
Abstract: SDL5311G1 SDL-5301 SDL-5311-G1 SDL-5301-G1 SDL Laser diode SDL5301G1 diode em 513 sdl diode laser SDL-5300
Text: -ÿ L 5 I »¡¡•■I & conn S E R I E n m S LOW COST 100/50mWCW SINGLE MODE GaAIAs LASER DIODES Key Features High power in a diffraction limited, single spatial mode beam is provided by the low Diffraction Limited Beam TEM00 Single Transverse Mode cost SDL-5300 series laser diodes. The index
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100/50mWCW
TEM00
SDL-5300
SDL-5311-G
00003fc
SDL5311G1
SDL-5301
SDL-5311-G1
SDL-5301-G1
SDL Laser diode
SDL5301G1
diode em 513
sdl diode laser
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Untitled
Abstract: No abstract text available
Text: GTR MODULL SILICON N CHANNEL IGBT MG75N1AS1 HIGH P O W E R S W I T C H I N G APP L I C A T I O N S . Unit in m m . H i g h Input Impe d a n c e 5 3± 0.5 . High S p e e d : tf= 0. 7fis Max. ( l £ = 75A) . Low Saturation Voltage : V ^ e ( s a t ) = 5 .O V ( M a x . )
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MG75N1AS1
MG75N1AS!
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tlp721gb
Abstract: tlp721 MARKING TLP721F
Text: TLP721 GaAs IRED & PHOTO-TRANSISTOR T L P 7 2 1 O FFIC E M A C H IN E . H O U S E H O L D USE E Q U IP M E N T . S O L ID ST A T E R ELA Y. S W IT C H IN G P O W E R SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic
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TLP721
TLP721
UL1577,
E67349
BS415
BS7002
EN60950)
SS4330784
4000Vrms
E0884/06
tlp721gb
MARKING TLP721F
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