EE-SG3
Abstract: omron e-50
Text: Photomicrosensor EE-SG3/EE-SG3-B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • Dust-proof model with a 3.6 mm wide slot. • Solder terminal model (EE-SG3). • PCB terminal model (EE-SG3-B). 13 19±0.1
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MIL-STD-750-2031-1
Abstract: EE-1001 EE-1006 EE-2002 OMRON EE-1001
Text: EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment H Built-in amplifier with NPN output H Models available with 5- to 12-VDC and 5H H H H H to 15-VDC input CMOS- and TTL-compatible 19-mm sensing distance EE-SB5V-E
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80-mA
12-VDC
15-VDC
19-mm
EE-1001/1006)
EE-2002
1-800-55-OMRON
MIL-STD-750-2031-1
EE-1001
EE-1006
EE-2002
OMRON EE-1001
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OMRON EE-1001
Abstract: EE-1001 EE-sb5v-e OMRON EE-1006 EE-1006 EE-2002 transistor A 1006
Text: EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment H Built-in amplifier with NPN output H Models available with 5- to 12-VDC and 5H H H H H to 15-VDC input CMOS- and TTL-compatible 19-mm sensing distance EE-SB5V-E
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80-mA
12-VDC
15-VDC
19-mm
EE-1001/1006)
EE-2002
1-800-55-OMRON
OMRON EE-1001
EE-1001
EE-sb5v-e
OMRON EE-1006
EE-1006
EE-2002
transistor A 1006
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IGBT S 1377
Abstract: Upi 0108 PM50RSK060 600 watts inverter circuit diagram 300 volt 5 ampere transistor dc to three phase inverter ic wn 537 a
Text: PM50RSK060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts EE DD THICK TYPICAL 19 PLACES A B J U 123 4 D N N N 5678 9 11 13 15 17 19 10 12
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PM50RSK060
Amperes/600
IGBT S 1377
Upi 0108
PM50RSK060
600 watts inverter circuit diagram
300 volt 5 ampere transistor
dc to three phase inverter ic
wn 537 a
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223210
Abstract: No abstract text available
Text: Date Code XXXXXXX 2 ERNI 223210 EE Zone für durchkontaktierte 2 18 x 2 = 13,45 -0,1 15,4 3 -0,1 Ident-Nr. Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 36 6x2= 1 19 z Ebene - Level 3 Ebene - Level 2 12 11.2 9.7 a 8.2 Ebene - Level 1 b 19
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ERMAB19
223210
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Untitled
Abstract: No abstract text available
Text: ERNI EE Zone für durchkontaktierte Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 853040 2 18 x 2 = 36 2 4x2= Level 3 Ebene - 1 19 13,45 -0,1 15,4 Date Code 3 -0,1 Firmensignet XXXXXXX Ident-Nr. Ebene - z a Level 2 Ebene - Level 1 b 19 c 11.2
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D-73099
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Untitled
Abstract: No abstract text available
Text: Date Code 13,45 -0,1 15,4 3 -0,1 Ident-Nr. XXXXXXX ERNI 134188 EE Zone für durchkontaktierte Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 2 18 x 2 = 36 2 6x2= 1 19 z a Ebene - Level 3 Ebene - Level 2 12 11.2 9.7 b 19 Ebene - Level 1 c 1
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D-73099
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EE-SX1088
Abstract: No abstract text available
Text: Photomicrosensor Transmissive EE-SX1088 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • 25±0.2 19±0.15 Two, R1 5±0.2 6±0.2 Four, C0.3 Two, 3.2±0.2 dia. holes ■ Absolute Maximum Ratings (Ta = 25°C)
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EE-SX1088
EE-SX1088
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EE-SX1096
Abstract: Omron ir 21015
Text: Photomicrosensor Transmissive EE-SX1096 Be sure to read Precautions on page 25. • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 25±0.2 19±0.15 Two, R1 5±0.2 6±0.2 Two, 3.2±0.2 dia. holes
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EE-SX1096
EE-SX1096
Omron
ir 21015
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sine wave generator using LM358
Abstract: LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
Text: University of North Carolina, Charlotte Department of Electrical and Computer Engineering ECGR 3157 EE Design II Spring 2011 Lab 1 Power Amplifier Circuits Issued: January 19, 2011_Due: February 4, 2011 In this assignment, you will build some basic amplifier circuits. Many of these amplifiers will
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LM741
sine wave generator using LM358
LM358 vs LM741
sine wave generator using opamp
lm358 sine wave generator circuit
lm358 gain formula
lf356 op-amp
opamp Lm358 pin function
LM358 microphone
electrical power generator using transistor
transistor based class A amplifier lab
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EE-SPY415
Abstract: No abstract text available
Text: EE-SPY415 Reflective Photomicrosensor with a detectable sensing distance of 3- to 19-mm white paper Photo IC circuitry greatly improves response time Pulse modulation effectively reduces external light interference Convergent technology ensures enhanced sensing area
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EE-SPY415
19-mm
EE---SPY415
MAX12
1-800-55-OMRON
653-EE-SPY415
EE-SPY415
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Untitled
Abstract: No abstract text available
Text: XXXXXXX 2 ERNI 174118 EE Zone für durchkontaktierte 2 18 x 2 = Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 36 6x2= 12 923533 1 19 Ebene - a b 11.2 Level 3 Ebene z 9.7 Level 2 19 8.2 Ebene - Level 1 c 1 d +0.2 +0.2 +0.2 4.5 ±0.3 e 3.7 ±0.3
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ERMAB19
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MPC505
Abstract: No abstract text available
Text: MPC505 Customer Information Sheet Preliminary Rev. B Silicon [revision 12-19-1997] Customer Information refers only to user documentation which may be incorrect Issue#982 Masking or Negating Interrupts If the EE bit in the MSR is asserted external interrupts enabled and either of the following
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MPC505
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EESM3B
Abstract: EE-SM3B P8-00
Text: Photomicrosensor EE-SM3B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. Two, 3.2 dia. holes • • • Two, C1.7 19±0.15 General-purpose model with a 3-mm-wide slot. PCB mounting type. With a red LED as an emitter element and a
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923132
Abstract: No abstract text available
Text: 15.4 3 -0.1 Date Code 13.45 -0.1 Id.-Nr. ERNI XXXXXXX 923132 EE Zone fuer durchkontaktierte 5 0,5 Loecher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 Ausrichtstreifen Alignment strip 2 2 6 x 2= 12 18 x 2 = 36 1 19 z Ebene - Level 3 Ebene - Level 2
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D-73099
923132
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R3BC
Abstract: No abstract text available
Text: 15.4 3 -0.1 Date Code 13.45 -0.1 Id.-Nr. XXXXXXX ERNI 923346 EE Zone fuer durchkontaktierte 5 0,5 Loecher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 Ausrichtstreifen Alignment strip 2 5x2= 2 18 x 2 = 10 36 1 19 z a Ebene - Level 3 Ebene - Level 2
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D-73099
ERMB19
R3BC
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qml-38535
Abstract: 54ACT163 CQCC1-N20 GDFP2-F16 GDIP1-T16 H30034 DIODE smd marking MO
Text: REVISIONS DESCRIPTION LTR DATE YR-MO -DA A P PR O V E D 98-04-20 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak. REV SH EE T REV A A A A A A A SH EE T 15 16 17 18 19 20 21 REV STATUS O F SH EE TS PM IC N/A
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114810
Abstract: No abstract text available
Text: Bestueckungsplan - contact layout 19 1 m- bestueckt- assemUe 19 1 EE-Zo n e fuer durchkontaktierte Loecher 0 0.6 *o.os Compliant zone for thru hole 0 0 .6 *0 .0 5 shieldinp 3-0,4 TT ! T T i j i i t 11.4 Anforderungsstufe Datum Id -N r. 13.85 date abqefraest;
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obg-4-101
114810
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qml-38535
Abstract: No abstract text available
Text: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE
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MIL-BUL-103.
5962-9169501MLX
5962-9169501M3X
PALCE610H-20/BLA
PALCE610H-20/B3A
qml-38535
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pbt-GF15
Abstract: mqs 6 AMP PBT-GF15 114-18659
Text: T HI S D R A W I N G IS UN PU BLI SHE D. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG COPYRIGHT 19- 3 6 8 BY AMP R E L E A S E D FOR P U B L I C A T I O N FREI FUE R V E R O E F F E N T L I C H U N G INCORP ORA TED . ^ E eE eE htE t ,19-. MA T ED WITH: P A S S E N D ZU:
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P8T-G515
P5T-GP15
PBT-G515
3F588
MA555TAB
pbt-GF15
mqs 6
AMP PBT-GF15
114-18659
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SMA-JR
Abstract: No abstract text available
Text: 13 12 10 M ATER IALS AND FINISHES SEE S H EE T 1 B B RGB RANGE SEE T A B L E RGB LAYO U T 5.5A. MIN • SEE S H EE T 1 ' .218 n _/Hd SCREW LENGTH SEE TA B LE REF ONLY 1.05 .O AT REF Wit V- REF 0-80 UNF-2A TH READ TORQUE TO .5-.8 INCH-POUND 73251-1856 4.8 / .19
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EWR-1995
SD-73251-185
SMA-JR
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Untitled
Abstract: No abstract text available
Text: 3 THIS DRAWING C IS U N P U B L I S H E D . COPYRIGHT RELEASED BY 19 AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS ,19 R E V ISIONS RESERVED. DF DESCRIPTION REV PER OH 14- DATE DWN EE 3 - 18-05 - 0 5 APVD [5.08] 0 1 D [5 HOUSI NG M A T ' L : VECTRA COLOR : BLACK
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED •PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC, LEDE POLARITY PIN El PIN EE COLOR + YELLDW + GREEN — LEDI POLARITY PIN 19 PIN EO
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2002/95/EC
TRD1-10
125MHz
100DHMS
5MHz-40MHz
40MHz-100MHz
20LDG
f/80MHz)
100kHz
100MHz
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Untitled
Abstract: No abstract text available
Text: DATE EE? 11-10 08 NC 5-19 10 A POSITRONIC INDUSTRIES BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION 15 GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK, POSITRONIC INDUSTRIES ASSUMES NO
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D5927,
ODD78M3S60T0/AA
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