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    DS206 Price and Stock

    Pentair Equipment Protection - Hoffman PDS206D

    SOLID DOOR 2000X600MM
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    DigiKey PDS206D Bulk 1
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    OWON Technology VDS2064

    O-SCOPE 60MHZ 4 CH 1GS/S
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    DigiKey VDS2064 Box 1
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    Pentair Equipment Protection - Hoffman PDS206B

    DOOR SOLID 2000X600 BLK
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    DigiKey PDS206B Bulk 1
    • 1 $880.42
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    OWON Technology VDS2062

    O-SCOPE 60MHZ 2 CH 1GS/S
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    DigiKey VDS2062 Box 1
    • 1 $259
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    Pentair Equipment Protection - Hoffman PDS206G

    DOOR SOLID 2000X600 GR
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    DigiKey PDS206G Bulk 1
    • 1 $880.42
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    DS206 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS2064 Dallas Semiconductor 8K x 8 Static RAM Original PDF
    DS2064-200 Maxim Integrated Products 8K x 8 Static RAM Original PDF
    DS2064-200 Dallas Semiconductor 8K x 8 Static RAM Scan PDF
    DS2064S-200 Dallas Semiconductor 8K x 8 Static RAM Original PDF
    DS2064S-200 Dallas Semiconductor 8K x 8 Static RAM Scan PDF
    DS2065W Maxim Integrated Products 3.3V Single-Piece 8Mb Nonvolatile SRAM Original PDF
    DS2065W-100 Maxim Integrated Products 3.3V Single-Piece 8Mb Nonvolatile SRAM Original PDF
    DS2065W-100# Maxim Integrated Products 3.3V Single-Piece 8Mb Nonvolatile SRAM Original PDF

    DS206 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS2064

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: July 2, 1996 Subject: PRODUCT CHANGE NOTICE – E63001 Description: Product Obsolescence: DS2064 Low–Voltage Option Description of Change: Effective September 30, 1996, all DS2064 devices will become 5–volt–only products. All low–voltage specifications for both AC and DC parameters will be removed from the DS2064 Data Sheet and


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    PDF E63001 DS2064

    K19 FET

    Abstract: plc fire protection DS1265W DS2065W DS2065W-100
    Text: Rev 0; 1/05 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2065W 256-ball K19 FET plc fire protection DS1265W DS2065W-100

    CS8952

    Abstract: CS8952-IQ
    Text: 08/14/00 Errata: CS8952-IQ Performance Update Reference CS8952 Data Sheet revision DS206PP2 dated Jul ’98 • Add part number to Ordering Information on page 1 of the datasheet. - CS8952-IQ -40° C to +85° C 100-pin TQFP • On page 4, add the following row to the RECOMMENDED OPERATING


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    PDF CS8952-IQ CS8952 DS206PP2 100-pin CS8952-IQ ER206E1

    XC6SLX9-TQG144-2C

    Abstract: XC6SLX45-CSG324 XC6SLX16-CSG225 XC6SLX16-FTG256 XC6SLX16-CSG324 XC6SLX4-TQG144-2C XC6SLX45-CSG484 XC6SLX9-CSG225 XC3S1400A-FG676-4C/I XC6SLX45-FGG484
    Text: 32-Bit Initiator/Target v3 & v4 for PCI DS206 December 2, 2009 Product Specification v3.167 & v4.11 Features • Fully compliant 32-bit, 66/33 MHz Initiator/Target core for PCI • Customizable, programmable, single-chip solution • Pre-defined implementation for predictable timing


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    PDF 32-Bit DS206 32-bit, XC6SLX9-TQG144-2C XC6SLX45-CSG324 XC6SLX16-CSG225 XC6SLX16-FTG256 XC6SLX16-CSG324 XC6SLX4-TQG144-2C XC6SLX45-CSG484 XC6SLX9-CSG225 XC3S1400A-FG676-4C/I XC6SLX45-FGG484

    XC7K325TFFG900

    Abstract: XC6SLX45-CSG324 XC3SD3400AFG676 XC7K325T-ffg900 spartan ucf file 6 XC6SLX16-FTG256 XC6SLX25-CSG324-2C XC6SLX16-CSG324 XC6SLX45-FGG484 XC7K355T-FFG901
    Text: LogiCORE IP 32-Bit Initiator/Target v3 & v4 for PCI DS206 October 19, 2011 Product Specification v3.167 & v4.15 Features LogiCORE IP Facts Table • Fully compatible 32-bit, 66/33 MHz Initiator/Target core for PCI • Customizable, programmable, single-chip solution


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    PDF 32-Bit DS206 32-bit, XC7K325TFFG900 XC6SLX45-CSG324 XC3SD3400AFG676 XC7K325T-ffg900 spartan ucf file 6 XC6SLX16-FTG256 XC6SLX25-CSG324-2C XC6SLX16-CSG324 XC6SLX45-FGG484 XC7K355T-FFG901

    XC2S150pq208

    Abstract: xc2s50-pq208 XCV1000EFG680-6C XC2S150PQ208-5C XC2S200ePQ208 XC2S300EPQ208-6C xcv1000efg680 XCV300BG432 2S50E-PQ208-6C XC3S1000-FG456-4C
    Text: LogiCORE PCI32 Interface v3.0 DS206 October 28, 2003 Introduction Data Sheet, v3.0.116 LogiCORE Facts With the Xilinx LogiCORE PCI Interface, a designer can build a customized, fully PCI 2.3-compliant core with the highest possible sustained performance, 528 Mbytes/sec.


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    PDF PCI32 DS206 32-bit, 32-bit 64/32-bit PC32/33 XC2S150pq208 xc2s50-pq208 XCV1000EFG680-6C XC2S150PQ208-5C XC2S200ePQ208 XC2S300EPQ208-6C xcv1000efg680 XCV300BG432 2S50E-PQ208-6C XC3S1000-FG456-4C

    DIN 65536

    Abstract: FA 600 DS2064 DS2064S
    Text: DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current NC 1 28 VCC A12 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 • Data Retention Voltage = 5.5V to 2.0V A3 7 22 OE A2 8 21 A10 • Access time equals 200 ns at 5.0V


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    PDF DS2064 DS2064S DIN 65536 FA 600 DS2064

    DS2068

    Abstract: DS2068S 8K X 8 Static RAM 100N 100NS H000402 for 64K RAM RAM64K 90-2068S DALLAS SOIC PRODUCT CHANGE
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 10, 2000 Product Change Notice – H000402 Subject: Product Obsolescence – DS2068 8K x 8 Static RAM Description of Change: Effective July 10, 2000 Dallas Semiconductor will no longer produce the DS2068 8K x 8 Static


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    PDF H000402 DS2068 DS2068 LH5164A/AH 100NS 90-2068S-000 90-2068S-TRL DS2068S 8K X 8 Static RAM 100N 100NS H000402 for 64K RAM RAM64K 90-2068S DALLAS SOIC PRODUCT CHANGE

    DS2064

    Abstract: DS2064S H50801
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: September 19, 1995 Subject: PRODUCT CHANGE NOTICE – H50801 Description: DS2064 and DS2064S Change Description of Change: This change affects DS2064 and DS2064S devices only. Operating current (Icco) will change to 70mA


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    PDF H50801 DS2064 DS2064S 200ns, 200ns 150ns 70ning H50801

    DS1265W

    Abstract: DS2065W DS2065W-100
    Text: Rev 2; 10/06 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2065W 256-ball DS2065W DS1265W DS2065W-100

    CS8952

    Abstract: CS8952T 0x19
    Text: Errata: CS8952 - Silicon revision: F Reference CS8952 Data Sheet revision DS206PP3 dated October 2001. Link Status Change Interrupt Description The datasheets for the CS8952 and CS8952T state that an interrupt can be generated on a link status change. This is true for 100 Mbps mode.


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    PDF CS8952 DS206PP3 CS8952T ER206F1 0x19

    DALLAS SEMICONDUCTOR Ds1235

    Abstract: megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 05/24/97 Subject: PRODUCT CHANGE NOTICE - E71301 Description: Tester Change for DS2016, DS2064, DS2068, and DS2257


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    PDF E71301 DS2016, DS2064, DS2068, DS2257 DS2257. DS1217 DALLAS SEMICONDUCTOR Ds1235 megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY

    DS2064

    Abstract: DS2064S
    Text: DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current NC 1 28 VCC A12 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 • Data Retention Voltage = 5.5V to 2.0V A3 7 22 OE A2 8 21 A10 • Access time equals 200 ns at 5.0V


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    PDF DS2064 DS2064S DS2064

    Untitled

    Abstract: No abstract text available
    Text: Rev 1; 5/06 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2065W 256-ball DS2065W

    ram 2064

    Abstract: Static RAM 2064
    Text: DS2064 DALLAS SEMICONDUCTOR FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V


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    PDF DS2064 DS2064 DS2064S 28-PIN ram 2064 Static RAM 2064

    DS2064

    Abstract: DS2064S
    Text: DS 2064 DALLAS DS2064 8K x 8 Static RAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Low pow er C M OS design • S tandby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 nA max at tA = 60°C V Cc = 3.0V V Cc = 5.5V V q c = 5.5V □ V cc 27 □ WE


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    PDF DS2064 28-pin DS2064S DS2064

    Untitled

    Abstract: No abstract text available
    Text: DS2064, DS2064S DALLAS SEMICONDUCTOR DS2064, DS2064S 8K x 8 FEATURES 3V Operation Static RAM PIN ASSIGNMENT • Low power CMOS design • Standby current NC C 1 28 A12 C 2 27 A7 C 3 26 A 6C 4 25 A5 L 5 24 50 nA max at tA = 25°C Vcc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V


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    PDF DS2064, DS2064S 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA m ax at 100 nA max at 1 nA m ax at tA = 25°C tA = 25°C tA = 60°C V Cc = 3.0V V Cc = 5.5V V c c = 5.5V Vcc □ WE 3 26 □ CE2 25 □


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    PDF DS2064

    DS206

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 3V Operation Static RAM PIN ASSIG NM ENT FEATURES Vcc 24 = 6 23 □ A11 7 22 □ • Data Retention Voltage OE A2 C 8 21 □ A10 A1 C 9 20 □ ceT 10 19 □ DQ7 27 C E 3 26 4 25 A5 C 5 A4 C A3 C A7 A6 5.5V to 2.0V • Access time equals 150 ns at 5.0V and 300 ns at 3.0V


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    PDF DS2064 28-pin DS2064S DS206

    Static RAM 2064

    Abstract: 2064 eprom
    Text: D S 2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA m ax at 100 nA max at 1 nA m ax at tA = 25°C tA = 25°C tA = 60°C V Cc = 3.0V V Cc = 5.5V V c c = 5.5V Vcc □ WE 3 26 □


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    PDF DS2064 Static RAM 2064 2064 eprom

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current NC C 1 28 3 Vcc A12 C 2 27 3 WË A7 C 3 26 3 CE2 A6 C 4 25 D A8 3 3 3 3 3 3 3 3 3 3 50 nA max at tA = 25°C Vcc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V


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    PDF DS2064 DS2064S 28-PIN 28-PIN 2bl4130

    2064 ram

    Abstract: No abstract text available
    Text: DS2064 DALLAS s e m ic o n d u c to r FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V


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    PDF DS2064 DS2064 DS2064S 28-PIN 2064 ram

    Untitled

    Abstract: No abstract text available
    Text: DS2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design 28 □ V cc A12 C 2 27 □ WE A7 C 3 28 CE2 A6 L 4 25 A5 L_ 5 24 A4 C 6 23 ASC 7 22 J 3 J J J A2 C S 21 n A10 A1 C 9 20 AC u 10 19 DQ0 L 11 OQ1 C 12 OQ2 C


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    PDF DS2064 28-pin DS2064 65536-bit

    Untitled

    Abstract: No abstract text available
    Text: DALLAS DS2064 8K x 8 Static RAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 |iA max at t* = 60°C V cc = 5.5V • Full operation for V cc = 4-5V to 5.5V • Data Retention Voltage = 5.5V to 2.0V


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    PDF DS2064 28-PIN 2L1413D