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    DRAM 1MX1 Search Results

    DRAM 1MX1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    DRAM 1MX1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    3654P

    Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
    Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable


    Original     		PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE Revision History Version 0.0 June 1998 • The 4th. generation of 16M DRAM components are applied for this module. KMM466F104CT1-L KMM466F124CT1-L KMM466F104CT1-L KMM466F124CT1-L DRAM MODULE KMM466F104CT1-L & KMM466F124CT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh


    Original     		PDF KMM466F104CT1-L KMM466F124CT1-L KMM466F124CT1-L 1Mx16, KMM466F10 1Mx64bits

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


    Original     		PDF 256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
    Text: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010, HY57V168010, HY57V161610 512Kbit HY57V164010- HY57V168010- 1SD10-03-NOV96 285ns hy57v168010a hy57v168010 HY57V164010 400k5

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
    Text: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 hy57v168010a hy57v168010 HY57V164010 hy57v168010altc hy57v16801 hy57v161610a MDQ13 M1023 OV9653

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    KM44C1003CJ

    Abstract: No abstract text available
    Text: KMM5361203AW/AWG DRAM MODULE KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		PDF KMM5361203AW/AWG KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW KMM5361203AW cycles/16 42-pin KM44C1003CJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin

    1Mx4

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The


    OCR Scan     		PDF KMM5361203W/WG 1Mx36 1Mx16 KMM5361203W 42-pin 24-pin 72-pin 1Mx4

    KM416C1200AJ

    Abstract: km44c1003cj kmm5361203aw
    Text: DRAM MODULE 4 Mega Byte KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KM416C1200AJ km44c1003cj

    ODQ35

    Abstract: KM44C1003CJ
    Text: Preliminary KMM5362203BW/BWG DRAM MODULE KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin ODQ35 KM44C1003CJ

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41

    km44c1003cj

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN E R A L D ESCRIPTIO N The Samsung KMM5361203BW is a 1M bit x 36 Dynamic RAM high density memory module. The FEATURES


    OCR Scan     		PDF KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 KMM5361203BW 42-pin 24-pin 72-pin km44c1003cj

    km44c1003cj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS


    OCR Scan     		PDF KMM5361203AW/AWG KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KMM5361233AW km44c1003cj

    D0310

    Abstract: No abstract text available
    Text: KMM5321200BW DRAM Module ELECTRONICS KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder


    OCR Scan     		PDF KMM5321200BW KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW cycles/16ms KMM5321200BWG D0310

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		PDF KMM5322200BW/BWG KMM5322200BW/BWG 2Mx32 1Mx16 KMM5322200BW KMM5322200BW cycles/16ms KMM5322200BWG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer.


    OCR Scan     		PDF KMM5362205C2W/C2WG 2Mx36 1MX16 KMM5362205CW/CWG KMM5362205C2W/C2WG KMM5362205C2W 2Mx36bits

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE KM M5362203AW/AWG KM M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESC RIPTIO N FEATURES The Sam sung KMM5362203AW is a 2M bit x 36 Dynam ic RAM high density m em ory module. The Samsung KM M 5362203AW consists of four CMOS


    OCR Scan     		PDF M5362203AW/AWG M5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW 5362203AW 24-pin 72-pin 362203A KMM5362203AW KM416C1200AJ

    5362203

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5362203W/WG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 BAN DRAM and 1Mx4 Quad CAS DRAM G E N E R A L DESCRIPTIO N FEATURES • Performance Range. The Sam sung KM M 5362203W is a 2M bit x 36 D ynam ic RAM high density m em ory m odule The


    OCR Scan     		PDF KMM5362203W/WG 2Mx36 1Mx16 362203W 72-pin KMM5322203W 5362203

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5321204BW/BWG KMM5321204BW/BWG Fast Page Mode with Extened Data Out 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204BW is a 1M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5321204BW/BWG KMM5321204BW/BWG 1Mx32 1Mx16 KMM5321204BW 1Mx16bit 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


    OCR Scan     		PDF KMM5322200AW KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW cycles/16 KMM5322200AWG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322200AW/AWG KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


    OCR Scan     		PDF KMM5322200AW/AWG KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5321200BW/BWG KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder


    OCR Scan     		PDF KMM5321200BW/BWG KMM5321200BW/BWG 1Mx32 1Mx16 5321200BW KMM5321200BW cycles/16ms KMM5321200BW