DNA 30 E 2200 PA
Abstract: marking 55 485 DNA30E2200 DNA30E2200PA
Text: DNA 30 E 2200 PA advanced VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.28 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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O-220
DNA30E2200PA
O-220AC
60747and
DNA 30 E 2200 PA
marking 55 485
DNA30E2200
DNA30E2200PA
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DNA 30 E 2200 PA
Abstract: DNA30E2200FE DNA30E2200PC 090 DNA DNA30E2200 marking code 2hv
Text: DNA 30 E 2200 PA advanced VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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O-220
O-220AC
DNA30E2200PC
DNA30E2200FE
DNA30E2200PA
O-263AB
60747and
DNA 30 E 2200 PA
DNA30E2200FE
DNA30E2200PC
090 DNA
DNA30E2200
marking code 2hv
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DNA30EM2200PC
Abstract: DNA30E2200PC DNA30E2200FE DNA30E2200PA
Text: DNA 30 EM 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 EM 2200 PC 1 2 3 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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PDF
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O-263
sine180°
60747and
20110520a
DNA30EM2200PC
DNA30E2200PC
DNA30E2200FE
DNA30E2200PA
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DNA MARKING CODE
Abstract: DNA30E2200PA DNA30E2200PC DNA30EM2200PC
Text: DNA 30 E 2200 PA V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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PDF
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O-220
sine180°
60747and
20110520a
DNA MARKING CODE
DNA30E2200PA
DNA30E2200PC
DNA30EM2200PC
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DNA30EM2200PC
Abstract: DNA30E2200FE DNA30E2200PC
Text: DNA 30 E 2200 PA V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number 3 1 Backside: anode Features / Advantages: Package: Applications: Housing: TO-220 Diode for main rectification For single and three phase bridge configurations
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O-220
sine180Â
60747and
20110520a
DNA30EM2200PC
DNA30E2200FE
DNA30E2200PC
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DNA30E2200PC
Abstract: DNA30EM2200PC
Text: DNA 30 E 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 E 2200 PC 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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Original
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PDF
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O-263
sine180°
60747and
20110520b
DNA30E2200PC
DNA30EM2200PC
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DNA30E2200
Abstract: DNA30E2200FE DNA 30 C685 DNA30E2200PA DNA30E2200PC
Text: DNA 30 E 2200 FE tentative VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.24 V Part number DNA 30 E 2200 FE 5 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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DNA30E2200PA
DNA30E2200PC
DNA30E2200FE
O-220AC
O-263AB
60747and
DNA30E2200
DNA30E2200FE
DNA 30
C685
DNA30E2200PA
DNA30E2200PC
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DNA30E2200FE
Abstract: DNA30E2200PA DNA30EM2200PC
Text: DNA 30 E 2200 FE V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 FE 5 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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sine180°
60747and
20110822a
DNA30E2200FE
DNA30E2200PA
DNA30EM2200PC
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Untitled
Abstract: No abstract text available
Text: Diode Terminator Electrical Characteristics Supply Voltage VDD . . . . . . . . . . . . . -.3V to +7V Channel Clamp Current . . . . . . . . . . . . . ±50mA Package Power Rating @ 70°C . . . . . . . 1W Operating Temperature . . . . . . . . . . 0°C to +70°C
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400ps
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DNA30E2200PA
Abstract: DNA30EM2200PC
Text: DNA 30 E 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number 3 1 Backside: anode Features / Advantages: Package: Applications: Housing: TO-263 D2Pak Diode for main rectification For single and three phase
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Original
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PDF
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O-263
sine180Â
60747and
20110520b
DNA30E2200PA
DNA30EM2200PC
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DNA MARKING CODE
Abstract: No abstract text available
Text: Diode Terminator Electrical Characteristics Supply Voltage VDD . . . . . . . . . . . . . -.3V to +7V Channel Clamp Current . . . . . . . . . . . . . ±50mA Package Power Rating @ 70°C . . . . . . . 1W Operating Temperature . . . . . . . . . . 0°C to +70°C
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400ps
DNA MARKING CODE
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marking 406 diode -rectifier
Abstract: DNA30E2200FE 090 DNA DNA30E2200 DNA30E2200PA DNA30E2200PC
Text: DNA 30 E 2200 PC tentative VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 E 2200 PC 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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Original
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O-263
60747and
marking 406 diode -rectifier
DNA30E2200FE
090 DNA
DNA30E2200
DNA30E2200PA
DNA30E2200PC
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DNA30E2200PC
Abstract: DNA30EM2200PC
Text: DNA 30 EM 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number 1 2 3 Backside: anode Features / Advantages: Package: Applications: Housing: TO-263 D2Pak Diode for main rectification For single and three phase
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O-263
sine180Â
60747and
20110520a
DNA30E2200PC
DNA30EM2200PC
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DNA30E2200FE
Abstract: DNA30E2200PA DNA30E2200PC DNA30EM2200PC
Text: DNA 30 E 2200 FE V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number 5 1 Backside: anode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current Very low forward voltage drop
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sine180Â
60747and
20110822a
DNA30E2200FE
DNA30E2200PA
DNA30E2200PC
DNA30EM2200PC
|
|
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marking CODE D2B
Abstract: MARKING CODE D3B EP105 MC10EP105 MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code
Text: MC10EP105 Product Preview Quad 2-Input Differential AND/NAND The MC10EP105 is a 2–input differential AND/NAND gate. Each gate is functionally equivalent to a EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the EP105 is ideal for applications requiring the fastest AC performance available.
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MC10EP105
MC10EP105
LVEL05
EP105
190ps
r14525
MC10EP105/D
marking CODE D2B
MARKING CODE D3B
MC10EP105FA
MC10EP105FAR2
D3A transistor
D3A marking code
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DFN3020B-8
Abstract: DNA MARKING CODE
Text: A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS= 4.5V 3.7A 300mΩ @ VGS= 2.5V
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DFN3020B-8
DS35089
DFN3020B-8
DNA MARKING CODE
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Untitled
Abstract: No abstract text available
Text: ESH3B, ESH3C, ESH3D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss
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J-STD-020,
AEC-Q101
DO-214AB
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EP105
Abstract: MC100EP105 MC10EP105
Text: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,
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MC10EP105,
MC100EP105
MC10/100EP105
LVEL05
LVEL05
EP105
EP105
LQFP-32
MC10EP105/D
MC100EP105
MC10EP105
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tqfp 64 thermal resistance
Abstract: marking CODE D2B
Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,
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MC10EP105,
MC100EP105
MC10/100EP105
LVEL05
EP105
r14525
MC10EP105/D
tqfp 64 thermal resistance
marking CODE D2B
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EP105
Abstract: MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2
Text: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,
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MC10EP105,
MC100EP105
MC10/100EP105
LVEL05
LVEL05
EP105
EP105
r14525
MC10EP105/D
MC100EP105
MC100EP105FA
MC100EP105FAR2
MC10EP105
MC10EP105FA
MC10EP105FAR2
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74LS245N
Abstract: signetics 74f02
Text: Product specification Philips Semiconductors-Signetics FAST Products 74F02 Quad 2-input NOR gate FEATURE TYPE TYPICAL PROPAGA TION DELAY TYPICAL SUPPLY CURRENT TOTAL 74F02 3.4ns 4.4mA • Industrial temperature range available (-40°C to +85°C) ORDERING INFORMATION
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OCR Scan
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PDF
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74F02
14-pin
N74F02N
N74F02D
I74F02N
I74F02D
20nA/0
0mA/20mA
74LS245N
signetics 74f02
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74F00
Abstract: No abstract text available
Text: Product specification Philips Semiconductors-Signetics FAST Products Quad 2-input NAND gate FEATURE 74F00 TYPE TYPICAL PROPAGA TION DELAY TYPICAL SUPPLY CURRENT TOTAL 74F00 3.4ns 4.4mA • Industrial temperature range available (-40°C to +85°C) ORDERING INFORMATION
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OCR Scan
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PDF
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74F00
14-pin
N74F00N
I74F00N
N74F00D
I74F00D
40-pin
VSO-40)
74F00
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74LS245N
Abstract: Philips FA 145 74F32 I74F32D I74F32N N74F32D N74F32N 103 resistor pack DNA MARKING CODE
Text: Philips Semiconductors-Signetlcs FAST Products Product specification Quad 2-input OR gate 74F32 FEATURE • Industrial temperature range available —40°C to +85°C TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT( TOTAL) 4.1ns 8.2mA 74F32 ORDERING INFORMATION
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OCR Scan
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PDF
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74F32
14-pin
N74F32N
I74F32N
N74F32D
I74F32D
20-pin
300-mil)
74LS245N
Philips FA 145
103 resistor pack
DNA MARKING CODE
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Untitled
Abstract: No abstract text available
Text: Philip* Semiconductors-Signetics FAST Product* Product specification Quad 2-input NAND buffer open collector 74F38 FEATURE TYPE • Industrial temperature range available (-40°C to +85°C) TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT( TOTAL) 7.0ns 13mA
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PDF
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74F38
74F38
14-pin
N74F38N
N74F38D
I74F38N
I74F38D
OC/106
20jiA/1
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