EZ 729
Abstract: H944 SO45 OEE19415 OEE194152915 77ZA EZ 642 DI 944 63gp
Text: =;4203 0/1 8DJEF6? 86A =:D@:F>86?J E:6?:9 D; D:?6J ;OKZ[XOY * AheWZXWdZ * Iem _di[hj_ed beii0^_]^ _iebWj_ed * G_]^ WcX_[dj Wffb_YWX_b_jo * @bb c[jWb m[bZ[Z YedijhkYj_ed * G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h 6@7>:AF 696CF67>?>FJ _ @cX_[dj ]hWZ[ @cX_[dj j[cf[hWjkh[
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696CF67>
c3i6/63Gp
8BAF68F
5529cWn
OEE19415
OEE194152915
594cc
644cc
EZ 729
H944
SO45
OEE19415
OEE194152915
77ZA
EZ 642
DI 944
63gp
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QV smd
Abstract: SEMICONDUCTOR " PRODUCTS 5962-9561308HZA 5962-9560003MNA 5962-9560014QTA
Text: SRAM AS5C512K8 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View HIGH SPEED SRAM with REVOLUTIONARY PINOUT 36-Pin SOJ (DJ & ECJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 •SMD 5962-95613 •MIL-STD-883 FEATURES
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MIL-STD-883
AS5C512K8
36-Pin
3AS5C512K8F-35/H
AS5C512K8F-35/H
AS5C512K8F-45/H
QV smd
SEMICONDUCTOR " PRODUCTS
5962-9561308HZA
5962-9560003MNA
5962-9560014QTA
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as5c512k8ecj20
Abstract: No abstract text available
Text: SRAM AS5C512K8 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View HIGH SPEED SRAM with REVOLUTIONARY PINOUT 36-Pin SOJ (DJ & ECJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 •SMD 5962-95613 •MIL-STD-883 FEATURES
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AS5C512K8
36-Pin
MIL-STD-883
AS5C512K8F-35L/H
AS5C512K8F-45/H
AS5C512K8F-55/H
AS5C512K8F-55L/H
AS5C512K8F-45L/H
as5c512k8ecj20
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AS5C512K8
Abstract: AS5C512K8DJ 10 35L
Text: SRAM AS5C512K8 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View HIGH SPEED SRAM with REVOLUTIONARY PINOUT 36-Pin SOJ (DJ, ECJ & SOJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 •SMD 5962-95613 •MIL-STD-883
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AS5C512K8
36-Pin
MIL-STD-883
36L/H
AS5C512K8F-35L/H
AS5C512K8F-45/H
AS5C512K8F-55/H
AS5C512K8F-55L/H
AS5C512K8
AS5C512K8DJ
10 35L
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10 35L
Abstract: 5962-956001 QV smd AS5C512K8F-12 diode 10 35L AS5C512K8 AS5C512K8DJ 9FF MARKING
Text: SRAM AS5C512K8 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View HIGH SPEED SRAM with REVOLUTIONARY PINOUT 36-Pin SOJ (DJ & ECJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 •SMD 5962-95613 •MIL-STD-883 FEATURES
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AS5C512K8
36-Pin
MIL-STD-883
AS5C512K8F-35L/H
AS5C512K8F-45/H
AS5C512K8F-55/H
AS5C512K8F-55L/H
AS5C512K8F-45L/H
10 35L
5962-956001
QV smd
AS5C512K8F-12
diode 10 35L
AS5C512K8
AS5C512K8DJ
9FF MARKING
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R524
Abstract: A67A CD269
Text: :810,- -+/ 5D4;5 ;>5: . 8?A= 5 :7A=7C;53<<G B73<76 A7<3G 8LHVWTLU | EehY[ XWbWdY[Z bWjY^_d] h[bWo | 54@ YedjWYji im_jY^_d] YWfWX_b_jo | EW_bkh[ hWj[ YWd X[ J b[l[b | G_]^ WcX_[dj Wffb_YWX_b_jo | @bb c[jWb m[bZ[Z YedijhkYj_ed | G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h
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c3i6/63Gp
7629cWn
R524
A67A
CD269
|
Untitled
Abstract: No abstract text available
Text: l KaVTZWZTReZ`_d D >RfeZ`_ Hc`UfTe ^Rj SV UR^RXVU{ `c Z_[fcj ^Rj cVdf]e ZW Z_decfTeZ`_d RcV _`e W`]]`hVU} l ?Z^V_dZ`_d tHJF+1 ; pKYV W`]]`hZ_X Zd R_ Via]R_ReZ`_ `W eYV dj^S`]d fdVU Z_ eYV `aVcReZ`_ ^R_fR]} + TRfeZ`_4B_[fcj `c UR_XVc ^Rj `TTfc f_UVc daVTZR] T`_UZeZ`_d}
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22hhh1Rfe`
|
Untitled
Abstract: No abstract text available
Text: BmeaVcVi^dc Pd PZgb^cdad\n >cY Dj^YZa^cZh K[ >jidbdi^kZ NZaVn , IdYjaZ LgZ[VXZ ~*. @]VeiZg 4 P]Z ?Vh^X PZgb^cdad\^Zh K[ NZaVnh ~*. ~{ 8_^dQSd EQbQ]UdUbc ~*. *{ 8XQbQSdUbYcdYSc EQbQ]UdUbc ~*/ +{ 8_Y\ EQbQ]UdUbc ~*0 ,{ DbTUbY^W 8_TU ~*1 -{ Ded\Y^U 9Y]U^cY_^cy LYbY^W 9YQWbQ] 6^T IXU HYjU 9bQgY^W
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68w 69
Abstract: No abstract text available
Text: VLYNUNV[JT HRMN.BW\V[RVP I`XN HRMN.UW\V[RVP HQJO[ [`XN VLYNUNV[JT GW[JY` NVLWMNY ,68W\V[NY a;NJ[\YNZ |2JHED> ;@< :8IJ IJHK:JKH< 8>8@DIJ <NJ<HD8B @CF8:J |{EDL<D@<DJ IJHK:JKH< =EH ;@H<:J CEKDJ@D> ED J?< =H8C< |{EDD<:JEH JOF< |0EM<H IKFFBO w r4|{i nojoq4|{ Rrf
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eX35MXha
81I8p42;
68w 69
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Untitled
Abstract: No abstract text available
Text: BmeaVcVi^dc Pd PZgb^cdad\n >cY Dj^YZa^cZh K[ >jidbdi^kZ NZaVn , IdYjaZ LgZ[VXZ ~*} @]VeiZg 4 P]Z ?Vh^X PZgb^cdad\^Zh K[ NZaVnh ~*} ~{ 8_^dQSd EQbQ]UdUbc ~*} *{ 8XQbQSdUbYcdYSc EQbQ]UdUbc ~*~ +{ 8_Y\ EQbQ]UdUbc ~* ,{ DbTUbY^W 8_TU ~*+ -{ Ded\Y^U 9Y]U^cY_^cy LYbY^W 9YQWbQ] 6^T IXU HYjU 9bQgY^W
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Untitled
Abstract: No abstract text available
Text: TMS426400, TMS426400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS264-JANUARY 1993 DJ PACKAGEt TOP VIEW Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC [ DQ1 [ Low Power Dissipation (TMS426400P) - 100 pA CMOS Standby - 100 pA Self-Refresh
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OCR Scan
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TMS426400,
TMS426400P
304-WORD
SMKS264-JANUARY
TMS426400P)
SMKS264-JANUAFT/
TMS42S400
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CAC P60
Abstract: No abstract text available
Text: TMS427400, TMS427400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS274-JANUARY1993 DJ PACKAGEt TOP VIEW Organization . . . 4194 304 x 4 Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC c 1 DQ1 : 2 DQ2 : 3 Low Power Dissipation (TMS427400P)
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OCR Scan
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PDF
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TMS427400,
TMS427400P
304-WORD
SMKS274-JANUARY1993
TMS427400P)
427400/P-6
SMKS274-JAN
CAC P60
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Untitled
Abstract: No abstract text available
Text: TMS46400, TMS46400P 1 048 576-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMHS464-JANUARY 1993 SD PACKAGEt TOP VIEW DJ PACKAGEt (TOP VIEW) Single 3.3-V Power Supply (±0.3-V Tolerance) DQ1 C Low Power Dissipation (TMS46400P) - 200 mA CMOS Standby
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OCR Scan
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PDF
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TMS46400,
TMS46400P
576-WORD
SMHS464-JANUARY
TMS46400P)
TMS46400/P-70
TMS46400/P-80
TMS46400/P-10
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TMS44410
Abstract: TMS44410-70
Text: TMS44410 1 048 576-WORD BY 4-BIT WRITE-PER-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A - • Organization . . . 1 048 576 x 4 SMHS441 JANUARY 1991 DM and DJ Packaget Top View • Single 5-V Power Supply (±10% Tolerance) • Performance Ranges: ACCESS ACCESS ACCESS
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OCR Scan
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PDF
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TMS44410
576-WORD
SMHS441
TMS44410-60
TMS44410-70
TMS44410-80
TMS44410-10
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tcs-f
Abstract: No abstract text available
Text: TMS426100, TMS426100P 16777 216-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORY SMKS261-JANUARY1993 Organization . . . 16 777 216 x 1 DJ PA C K A G E t TOP VIEW Single 3.3-V Power Supply (±0.3-V Tolerance) 1 V CC [ Low Power Dissipation (TMS426100P Only) - 100 nA CMOS Standby
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OCR Scan
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PDF
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TMS426100,
TMS426100P
216-BIT
SMKS261-JANUARY1993
426100/P-60
426100/P-70
426100/P-8Q
426100/P-10
tcs-f
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Untitled
Abstract: No abstract text available
Text: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period
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OCR Scan
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PDF
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128ms
24/26-Pin
|
Untitled
Abstract: No abstract text available
Text: TMS44100 4 194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY S M H S 410B — SEPTEM BER 1 9 8 9 — REVISED JANUARY 1991 This Data Sheet is Applicable to A ll TMS44100s Symbolized With Revision "B" and Subsequent Revisions as Described on Page 5-106. DM and DJ Packages*
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OCR Scan
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PDF
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TMS44100
304-BIT
TMS44100s
TMS44100-60
TMS44100-70
TMS44100-80
TMS44100-10
SMHS410B
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M995
Abstract: No abstract text available
Text: |V |IC Z R O N MT4LC4M4B1 L 4 MEG X 4 DRAM DRAM 4 MEG x 4 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate
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OCR Scan
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PDF
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180mW
048-cycle
24/26-Pin
M995
|
zig bee
Abstract: TMS44400 TMS44400P
Text: • flSbl755 TEXAS INSTR 007^51 f l Sb B T I I S TMS44400, TMS44400P 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ASIC/MEMORY SMHS44ÛF-OCTOBER 1989-REVISED APRIL 1993 Organization . . . 1 048 576 x 4 DJ PACKAGET (TOP VIEW) Single 5-V Power Supply (±10% Tolerance)
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OCR Scan
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PDF
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Sbl725
007W1
TMS44400,
TMS44400P
576-WORD
SMHS44Ã
1989-REVISED
TMS44400/P-60
TMS44400/P-70
TMS44400/P-80
zig bee
TMS44400
|
Untitled
Abstract: No abstract text available
Text: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1
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OCR Scan
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PDF
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TMS44100,
TMS44100P
4194304-BIT
SMHS410F-SEPTEMBER
1989-REVISED
TMS44100/P-60
TMS44100/P-70
TMS44100/P-80
A0-A10
TMS44100
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TMS44C260
Abstract: No abstract text available
Text: TMS44C260 262 144 WORD BY 4-BIT QUAD CAS DYNAMIC RANDOM-ACCESS MEMORY SMGS260B — JANUARY 1990 — REVISED NOVEMBER 1990 262 144 x 4 Organization DJ P a c k a g e ^ Top V ie w Single 5-V Supply (10% Tolerance) DQ1 C DQ2 C Performance Ranges: ACCESS ACCESS ACCESS
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OCR Scan
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PDF
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TMS44C260
SMGS260B
S260B
|
Untitled
Abstract: No abstract text available
Text: 2 MEG X 8 FPM DRAM MICRON HR AM MT4C2M8B1 MT4LC2M8B1 U r iM IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS LC C • Packages Plastic 28-pin SOJ (300 mil) Plastic 28-pin SOJ (400 mil) Plastic 28-pin TSOP (300 mil) DJ DW TG • Timing 60ns access 28-Pin SOJ
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OCR Scan
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PDF
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28-Pin
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N I 16 MEG x 4 EDO DRAM H D A M U r iM IV I MT4LC16M4G3 MT4LC16M4H9 FEATURES PIN ASSIGNMENT Top View OPTIONS H9 G3 • Packages Plastic SOJ (400 m il) Plastic TSOP (400 mil) A3 A4 A5 DJ TG* • Timing 50ns access 60ns access 32-Pin TSOP*
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OCR Scan
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PDF
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MT4LC16M4G3
MT4LC16M4H9
32-Pin
NC/A12*
|
48C138
Abstract: TMS48C138 ms48c 4bc1
Text: TMS48C128, TMS48C138 131 072-WORD BY 8-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES S M G S 1 2 8 A - DE CE M B E R 1 9 8 9 — R EVISED DECEMBER 1990 131 072 x DJ Package? 8 Organization Top View Single 5-V Supply (10% Tolerance) DQ1 1 2 DQ2 3 DQ3 DQ4 t 4
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OCR Scan
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PDF
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TMS48C128,
TMS48C138
072-WORD
128/C
TMS48C128
S128A
48C138
ms48c
4bc1
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