DE-Series
Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high
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DE275-102N06X2A
Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz
Text: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate
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PRF-1150
56MHz
DEIC420
DE275X2-102N06A
0-471-03018-X
DE275-102N06X2A
102n06x2a
amplifier circuit diagram class D 1000w
circuit diagram of 13.56MHz RF Generator plasma
DEIC420 RF MOSFET Gate Driver IC
13.56Mhz rf 1W amplifier module
circuit diagram of 13.56MHz RF Generator
Class E power amplifier, 13.56MHz
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Rudy Severns
Abstract: mospower applications handbook 3RH1140-1AD00 DE-150 DE-275 DE-375 Directed Energy "mospower applications handbook"
Text: DIRECTED ENERGY, INC. TECHNICAL NOTE The destructive effects of Kelvin leaded packages in high speed, high frequency operation Directed Energy, Inc. • 2401 Research Blvd., Ste 108 • Fort Collins, CO 80526 TEL: 970-493-1901 • FAX: 970-493-1903 • EMAIIL: [email protected] • WEB: www.directedenergy.com
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DE-275
Rudy Severns
mospower applications handbook
3RH1140-1AD00
DE-150
DE-375
Directed Energy
"mospower applications handbook"
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mospower applications handbook
Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
Text: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode
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transformer tank design calculation
Abstract: Noble resistor 50w power transformer tank calculation DEIC420 DEIC420 RF MOSFET Gate Driver IC FLUKE 87 schematic rf Power supply 500w equivalent circuit autotransformer P6131 RF transformer turn ratio 12
Text: DIRECTED ENERGY, INC. TECHNICAL NOTE “Stand Alone” RF Power Capabilities Of The DEIC420 MOSFET Driver IC at 3.6, 7, 10, and 14 MHZ. Matthew W. Vania Directed Energy, Inc. Abstract The DEIC420 MOSFET driver IC is evaluated as a “stand alone” RF source at 3.6, 7, 10, and 14 MHZ. To create up to 47W of CW RF all that
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DEIC420
0-471-03018-X
transformer tank design calculation
Noble resistor 50w
power transformer tank calculation
DEIC420 RF MOSFET Gate Driver IC
FLUKE 87
schematic rf Power supply 500w
equivalent circuit autotransformer
P6131
RF transformer turn ratio 12
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301N35
Abstract: DE-375
Text: PRELIMINARY SPECIFICATIONS DE-375 301N35 35A, 300V, 0.10Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-375
301N35
150oC
301N35
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102N02
Abstract: DE-150
Text: PRELIMINARY SPECIFICATIONS DE-150 102N02 1.4A, 1000V, 11Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-150
102N02
150oC
102N02
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201N09
Abstract: DE-150
Text: PRELIMINARY SPECIFICATIONS DE-150 201N09 9A, 200V, 0.40Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-150
201N09
150oC
201N09
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501N04
Abstract: DE-150-501N04 DE-150
Text: PRELIMINARY SPECIFICATIONS DE-150 501N04 4.5A, 500V, 1.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-150
501N04
150oC
501N04
DE-150-501N04
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501N16
Abstract: DE-275
Text: PRELIMINARY SPECIFICATIONS DE-275 501N16 16A, 500V, 0.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-275
501N16
150oC
501N16
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DE275-102N06A
Abstract: DE375-102N10A DE375-501N16A
Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.
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DE375-501N16A
DE275-102N06A
DE375-102N10A
DE275-102N06A
DE375-102N10A
DE375-501N16A
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Directed Energy
Abstract: 201N25 DE-275
Text: PRELIMINARY SPECIFICATIONS DE-275 201N25 25A, 200V, 0.08Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-275
201N25
150oC
Directed Energy
201N25
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DE-150-101N09
Abstract: 101N09 Directed Energy DE-150
Text: PRELIMINARY SPECIFICATIONS DE-150 101N09 9A, 100V, 0.16Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-150
101N09
250mA
150oC
SP101N09
DE-150-101N09
101N09
Directed Energy
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501N40
Abstract: No abstract text available
Text: PRELIMINARY SPECIFICATION DE-375X2 501N40 40A, 500V, 0.120Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-375X2
501N40
150oC
501N40
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102N20
Abstract: 3RH1140-1AD00 Directed Energy
Text: PRELIMINARY SPECIFICATIONS DE-375X2 102N20 20A, 1000V, 0.6Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-375X2
102N20
150oC
102N20
3RH1140-1AD00
Directed Energy
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Directed Energy
Abstract: 501N21 DE-375
Text: PRELIMINARY SPECIFICATIONS DE-375 501N21 21A, 500V, .25Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-375
501N21
150oC
Directed Energy
501N21
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DE-375-102N10
Abstract: 102N10 DE-375
Text: PRELIMINARY SPECIFICATIONS DE-375 102N10 10A, 1000V, 1.2Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-375
102N10
150oC
DE-375-102N10
102N10
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102N05
Abstract: DE-275
Text: PRELIMINARY SPECIFICATIONS DE-275 102N05 5A, 1000V, 2.6Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
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DE-275
102N05
150oC
102N05
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nec 2401
Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
Text: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR
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DE150-101N09A
1100P
nec 2401
QGS 80W 30 ohm
Directed Energy
DE150-101N09A
201N09
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DE-150
Abstract: z diode 14a
Text: 2849995 DIRECTED ENERGY I NC ~~T7 97D 00006 D eT| 20 4=1^5 □□□ODOfc, 3 J “ DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. DE-150 10IN14 SPECIFICATIONS PULSED POWER COMPONENTS AND SYSTEMS The Centre for Advanced Technology 2301 Research Blvd., Suile 101
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DE-150
10IN14
-J-35TI
z diode 14a
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k 2645 MOSFET
Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
Text: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology
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00DDD14
DE-150
45IP02
-450V,
00A/p>
k 2645 MOSFET
CD 4511 data sheet
Directed Energy
"free energy" circuit
k 2645
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DE-275
Abstract: No abstract text available
Text: r. . DIRECTED °t pr.nTrn ENERGY INC rucpfiv TM O _ 9 7 P > fi D ti ? 3 ^ DEB 2 f DE-275 SERIES □ DATA SlÆ rl DIRECTED ENERGY, IN C. PULSED POWER COMPONENTS AND SYSTEMS D T'"'"' jf i-/ l t n T T S ^ 0 0 D D 2 3 3 |~ • DE-275 10IP12 SPECIFICATIONS 4 The Centre for Advanced Technology
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DE-275
GGGDD23
10IP12
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mospower applications handbook
Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101
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00D0113
and01N
201P11-00*
101N30-00
P12-00*
DE-375
-59S--
102N11-00
501N21-00
mospower applications handbook
MOSFET power inverter 600W circuit diagram
HEXFET Power MOSFET designer manual
Rudy Severns
"mospower applications handbook"
02N05
Siliconix Handbook
501n04
MOSFET designer manual
Gate Drive Characteristics
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DE-150
Abstract: 12S100 Directed Energy suhl
Text: - - 9 7 D DIRECTE» ENERGY INC ^ nnnnn n » E | S f l M t:icn S T'-' 2 / OODDOOfl 7 | DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. 4 ^ DE-150 20IP05 SPECIFICATIONS % PULSED POWER COMPONENTS AND SYSTEMS The Centre or Advanced Technology
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DE-150
20IP05
-200V.
201P05
12S100
Directed Energy
suhl
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