Untitled
Abstract: No abstract text available
Text: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 E72873 Features IGBTs Symbol
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E72873
B25/85
20070912a
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v4331
Abstract: NTC 4,7 NTC M4 igbt sixpack 4512 diode
Text: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 Features Symbol Conditions Maximum Ratings
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B25/85
v4331
NTC 4,7
NTC M4
igbt sixpack
4512 diode
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. B POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current
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SHD114436
SHD114436A
SHD114436B
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FMB-29
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMB-29 1. Scope The present specifications shall apply to an FMB-29. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040512 1／5
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FMB-29
FMB-29.
UL94V-0
FMB29
FMB-29
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60EPS08
Abstract: 60EPS12 60EPS16
Text: Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A IFSM = 950A VRRM 800 to 1600V Description/Features The 60EPS. rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
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I2122
60EPS.
O-247AC
60EPS08
60EPS12
60EPS16
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DIODE 60 A
Abstract: 60EPS16
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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60EPS16PbF
O-247AC
18-Jul-08
DIODE 60 A
60EPS16
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60EPS08
Abstract: 60EPS12
Text: 60EPS. High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A Base common cathode 2 TO-247AC modified 1 Anode 1 3 Anode 2 DESCRIPTION/FEATURES The 60EPS. rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate
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60EPS.
O-247AC
18-Jul-08
60EPS08
60EPS12
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DIODE 60 A
Abstract: 60EPS16
Text: 60EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16 rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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60EPS16
O-247AC
18-Jul-08
DIODE 60 A
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9434
Abstract: 60EPS08PBF 60EPS08 60EPS12 60EPS12PBF
Text: 60EPS.PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A Base common cathode 2 TO-247AC modified 1 Cathode 1 3 Anode 2 DESCRIPTION/FEATURES The 60EPS.PbF rectifier High Voltage Series has been optimized for very low forward voltage drop,
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60EPS.
O-247AC
18-Jul-08
9434
60EPS08PBF
60EPS08
60EPS12
60EPS12PBF
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60EPS12
Abstract: P035H
Text: Bulletin I2176 10/04 SAFEIR Series 60EPS12PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 1200V Description/ Features The 60EPS12PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has
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I2176
60EPS12PbF
60EPS12PbF
O-247AC
60EPS12
P035H
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60EPS08
Abstract: 60EPS12
Text: 60EPS.PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A Base common cathode 2 TO-247AC modified 1 Cathode 1 3 Anode 2 DESCRIPTION/FEATURES The 60EPS.PbF rectifier High Voltage Series has been optimized for very low forward voltage drop,
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60EPS.
O-247AC
11-Mar-11
60EPS08
60EPS12
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Untitled
Abstract: No abstract text available
Text: Bulletin I2176 rev A 07/06 SAFEIR Series 60EPS.PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 800 to 1200V Description/ Features The 60EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate
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I2176
60EPS.
08-Mar-07
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60EPS12
Abstract: P035H
Text: Bulletin I2176 rev A 07/06 SAFEIR Series 60EPS.PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 800 to 1200V Description/ Features The 60EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate
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I2176
60EPS.
12-Mar-07
60EPS12
P035H
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AM4512C4512C
Abstract: AM4512C
Text: Analog Power AM4512C P & N-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC
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AM4512C
DS-AM4512
AM4512C-T1-XX
AM4512C4512C
AM4512C
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SMPS 30v 20a
Abstract: No abstract text available
Text: AO4714 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4714
AO4714
Figure10:
SMPS 30v 20a
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Designed and JEDEC-JESD47 2 qualified according to • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-247AC modified 1 Cathode • Typical applications are in input rectification and these
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VS-60EPS16PbF
JEDEC-JESD47
2002/95/EC
O-247AC
VS-60EPS16PbF
11-Mar-11
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MD74SC137
Abstract: MH88500IN MT8812
Text: MH88500IN Hybrid Subscriber Line Interface Circuit SLIC Preliminary Information ISSUE 1 Features April 1995 Ordering Information • • • • • • • • • • Differential to single ended conversion No transformers required Minimum installation space
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MH88500IN
MH88500IN
MD74SC137
MT8812
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40 watt telephone ring generator circuit
Abstract: MH88612 telephone ring led indicator 40 watt telephone ring generator 24VDC relay drive current "Crosspoint Switch" ic relay 24v pabx ring generator relay 5v ring ic
Text: MH88520-1 German Subscriber Line Interface Circuit SLIC Preliminary Information Features April 1995 ISSUE 4 • Differential to single ended conversion • Transformerless 2-2 wire conversion • Minimum installation space • Off-Hook detection and LED indicator drive
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MH88520-1
MH88520-1
-24VDC
40 watt telephone ring generator circuit
MH88612
telephone ring led indicator
40 watt telephone ring generator
24VDC relay drive current
"Crosspoint Switch"
ic relay 24v
pabx ring generator
relay 5v
ring ic
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MD74SC137
Abstract: MH88500 MT8812
Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MH88500
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MH88500
MD74SC137
MH88500
MT8812
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Untitled
Abstract: No abstract text available
Text: VS-60EPS.PbF www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode 2 FEATURES • Designed and JEDEC-JESD47 qualified according to • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-247AC modified 1 Cathode
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VS-60EPS.
JEDEC-JESD47
2002/95/EC
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Bulletin 12122 rev. A 07/97 International IS R Rectifier SAFE/R Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A * 'fsm = 950A VR RM800 to 1600V RRM Description/Features The 60EPS. rectifier SAFE/Rsexies has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
VRR07/97
S5452
QQ3Q21S
O-247AC
0D3G21b
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: diode T 4512 H diode rectifier p 600
Text: Bulletin 12122 rev. A 07/97 International TOR Rectifier SA FElR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A 'f s m = 950A VRRM800 to 1600V Description/Features The 60EPS. rectifierSA FE //?series has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
800tig.
O-247AC
T 4512 H diode
diode T 4512 H
diode rectifier p 600
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PS-4512 diode
Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Text: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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O-240
65------------r
PS-4512 diode
T 4512 H diode
ps 4512 diode
diode T 4512 H
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