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    DIODE SY 171 Search Results

    DIODE SY 171 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SY 171 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1717 ISL6726EVAL2Z: 24V to 12V 90W Active Clamp Forward DC/DC Converter Introduction Design Specifications The board is a 24V input to 12V output DC/DC converter that can output current up to 7.5A. It is implemented with Intersil’s Active Clamp Forward ACF current-mode PWM controller,


    Original     		PDF ISL6726EVAL2Z: ISL6726. ISL6726, not717 AN1717

    diode sy 171 10

    Abstract: "DIODE" SY 171 1 g diode sy 171 VK3140 DIODE SERIE SY diode sy 160 VK3120 diode sy 166 VK332 VG32
    Text: Direkt betätigtes 5/2-Wege-Elektromagnetventil Weichdichtender Schieber Serie l/min 147 Kompakt/Breite 18 X Länge 68 mm Geringe Leistungsaufnahme 4W DC (Standard) 2W DC (Energiesparausführung) Kupferfreie Ausführung standardmässig Alle mit dem Medium in Kontakt stehenden


    Original     		PDF VK3000 VK3120 VK3120Y VK3140 VK3140Y VV5K3-42- VV5K3-S42- diode sy 171 10 "DIODE" SY 171 1 g diode sy 171 VK3140 DIODE SERIE SY diode sy 160 VK3120 diode sy 166 VK332 VG32

    diode sy 166

    Abstract: diode sy 164 diode sy 171 "DIODE" SY 171 1 g VK3140Y diode sy 171 10 220v ac solenoid valve hOW TO READ varistor VALUE solenoid valve 12v VK3000
    Text: 5 Port Solenoid Valve/Direct Poppet Rubber seal Series Nl/min 147 Compact/Width 18 X Length 68 mm Low power consumption 4W DC (Standard) 2W DC (Energy saver) Standard copper free specification All the parts in contact with fluid are non-copper materials


    Original     		PDF VK3000 VK3120 VK3120Y VK3140 VK3140Y VV5K3-42- VV5K3-S42- diode sy 166 diode sy 164 diode sy 171 "DIODE" SY 171 1 g VK3140Y diode sy 171 10 220v ac solenoid valve hOW TO READ varistor VALUE solenoid valve 12v VK3000

    DXT170-71-1

    Abstract: SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171
    Text: 3 Port Solenoid Valve Rubber Seal Series SYJ300/500/700 SY Low power consumption: 0.5W Without light (Current draw: 21mA at 24V DC) Completely interchangeable with the previous series VJ300/500/700 and VZ300/500. Series VZ SYJ300 VJ300 — SYJ500 VJ500 VZ300


    Original     		PDF SYJ300/500/700 VJ300/500/700 VZ300/500. VJ300 SYJ500 VJ500 VZ300 SYJ700 VJ700 SYJ300 DXT170-71-1 SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171

    VK334V

    Abstract: diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171
    Text: 3 Port Direct Operated Poppet Solenoid Valve Rubber Seal Series VK300 Model Universal porting Valve Model Available for N.C. valve, N.O. valve, divider valve, selector valve, etc. Nl/min: 196 Compact/Width 18 X Length 63 mm Low consumption 4W DC (Standard)


    Original     		PDF VK300 VK332 VK332Y VK332E VK332V VK332W VK334 VK334Y VK334E VK334V diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171

    SYJ3120-5G-M3-Q

    Abstract: DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A
    Text: 4, 5 Port Solenoid Valve Rubber Seal Series SYJ3000/5000/7000 SV Low power consumption: 0.5W Without light SY (Current draw: 21mA at 24V DC) SYJ Bright colour tone and state of the art design SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD Completely interchangeable with


    Original     		PDF SYJ3000/5000/7000 VJ3000/5000/7000 VZ3000/5000 VJ3000/5000/7000 VZ3000/5000. SYJ3000 VJ3000 SYJ5000 VJ5000 VZ3000 SYJ3120-5G-M3-Q DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A

    SMC - SY5120

    Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
    Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based


    Original     		PDF SY9000 SY3000 SY5000 SY7000 SMC - SY5120 SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode

    k446

    Abstract: BUK446-1000B
    Text: N AMER P H IL IP S /D IS C R E T E b'ìE D • bbS3131 DD3DSÛS rnm ps semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0D305Ã K446-1000B OT186 BUK446-1000B k446 BUK446-1000B

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    Halbleiterbauelemente DDR

    Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
    Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.


    OCR Scan     		PDF DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170

    diode sy 171 10

    Abstract: diode sy 170/10
    Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,


    OCR Scan     		PDF BYV40 OT223 BYV40- OT223. diode sy 171 10 diode sy 170/10

    diode sy 171

    Abstract: "DIODE" SY 171 1 diode sy 171 10 "DIODE" SY 171 "DIODE" SY 171 1 g
    Text: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62083APA 8CH DARLINGTON SINK DRIVER The TD62083APA is high-voltage, high-current darlington drivers comprised of eight NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads.


    OCR Scan     		PDF TD62083APA TD62083APA 500mA diode sy 171 "DIODE" SY 171 1 diode sy 171 10 "DIODE" SY 171 "DIODE" SY 171 1 g

    diode sy 171 10

    Abstract: diode sy 171 "DIODE" SY 171 1 g diode ITT 172
    Text: - TC74LVX14F/FN/FS HEX SCHMITT INVERTER T he T C 74L V X 14 is a h ig h speed CMOS H E X SCH M ITT IN V ER T E R fab ricated w ith silicon gate C2MOS technology. D esigned for use in 3.3 V olt system s, i t achieves h ig h speed o peration w hile m a in ta in in g th e CMOS low pow er dissipation.


    OCR Scan     		PDF TC74LVX14F/FN/FS diode sy 171 10 diode sy 171 "DIODE" SY 171 1 g diode ITT 172

    integrated circuits equivalents list

    Abstract: FCH161 FCH181 FCH191 FJJ14 7400N FCL101 equivalent 7420N FCL101 FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS Mullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH161 FCH181 FCH191 FJJ14 FCL101 equivalent FJH111

    Diode SY 356

    Abstract: SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt
    Text: SERVICE-M ITTEILUNGEN V E B IN O U S T R tE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite 1986 1-4 Mitteilung aus den VEB Fernsehgerätewerk Staßfurt 1. Ablösung der sowjetischen Ge-Diode D 7 D in den Geräten


    OCR Scan     		PDF 2001/DBBtjT Diode SY 356 SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt

    integrated circuits equivalents list

    Abstract: FCY101 FCH151 FCH191 7400N 7402N 7420N FCL101 FJH101 FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCY101 FCH151 FCH191 FJH101 FJH111

    FCH121

    Abstract: FCL101 7400N 7490N 7402N 7420N FJH101 FJH111 FJH121 FJH131
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N FCH121 7490N FJH101 FJH111 FJH121 FJH131

    integrated circuits equivalents list

    Abstract: FCH111 Mullard Diode FCL101 7472N equivalent 7400N FCH131 7402N 7420N FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L V E R S IO N S Mullard equivalent Type No. TTL r a n g e DTL r a n g e - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH111 Mullard Diode 7472N equivalent FCH131 FJH111

    74ABT16543

    Abstract: 8C12 8EN10 BT16543DGG BT16543DL
    Text: INTEGRATED CIRCUITS ÀN TV M J"L IH 74ABT16543 16-bit octal latched transceivers with dual enable 3-State Product specification 1995 Feb 17 IC23 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 7110fl2fa 00fl7fl4S 171 This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF 74ABT16543 16-bit 711Dfi5b 00fl7fl4S 7110fl2b 00fl7Ã 74ABT16543 8C12 8EN10 BT16543DGG BT16543DL

    mikroelektronik ddr

    Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
    Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden


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    diode sy 171 10

    Abstract: BUK436-1000B diode sy 171
    Text: bSE T> m PHILIPS INTERNATIONAL 711062b □Db3cH l TDM • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK436-1000B 7110fl5b diode sy 171 10 BUK436-1000B diode sy 171

    Halbleiterbauelemente DDR

    Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
    Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.


    OCR Scan     		PDF 6x10x12 Halbleiterbauelemente DDR Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C

    "DIODE" SY 171 1 g

    Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
    Text: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise


    OCR Scan     		PDF APT40M42BFN APT35M42BFN MIL-STD-750 "DIODE" SY 171 1 g diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m

    Halbleiterbauelemente DDR

    Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
    Text: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik


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