DIODE S3V
Abstract: DIODE S3V20 DIODE S3V 40 S3V Diode S3V20 DIODE S3V 25 60-600V S3V 05 DIODE S3V 63 S3V Rectifier
Text: アキシャルダイオード 一般整流ダイオード Rectifier Diode Axial Diode •外形寸法図 OUTLINE DIMENSIONS Package：AX14 S3V□ 7 ＋0.5 −0 26.5±2 600V 3.5A φ1.4±0.1 Unit : mm Weight：1.06g（typ.） 26.5±2 φ4.4＋0.2 −0.1 ＊
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PackageAX14
S3V20
S3V60
25unless
S3V60
10msTj=
DIODE S3V
DIODE S3V20
DIODE S3V 40
S3V Diode
S3V20
DIODE S3V 25
60-600V
S3V 05
DIODE S3V 63
S3V Rectifier
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DIODE S3V
Abstract: DIODE S3V 40 S3V Diode DIODE S3V 63 S3V 63 DIODE S3V 7 DIODE S3V20 S3v 26 S3V Rectifier DIODE S3V 25
Text: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 1.06g （typ.） Package：AX14 600V 3.5A ① ② φ1.4 S3V□ ＊ 特長 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 ＋① Feature 26.5 7 φ4.4
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PackageAX14
S3V20
S3V60
1mst10msTj
DIODE S3V
DIODE S3V 40
S3V Diode
DIODE S3V 63
S3V 63
DIODE S3V 7
DIODE S3V20
S3v 26
S3V Rectifier
DIODE S3V 25
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Untitled
Abstract: No abstract text available
Text: S3V5R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5V and -15V DC power supplies. • DC blocks at all RF ports. • Ruggedized Construction. •
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DIODE S3V
Abstract: DIODE S3V 40 S3V Diode J534 DIODE S3V 25 DIODE S3V20 S3V60 63 marking code diode S3V 63 S3V20
Text: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 1.06g （typ.） Package：AX14 600V 3.5A ① 特長 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 Feature 26.5 7 ＋① ＊ 捺印面展開図 Marking
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PackageAX14
S3V60
S3V20
Volta5150
1mst10msTj
J534-1
DIODE S3V
DIODE S3V 40
S3V Diode
J534
DIODE S3V 25
DIODE S3V20
S3V60
63 marking code diode
S3V 63
S3V20
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Untitled
Abstract: No abstract text available
Text: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 1.06g （typ.） Package：AX14 600V 3.5A ① 特長 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 Feature 26.5 7 ＋① ＊ 捺印面展開図 Marking
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S3V60
S3V20
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S3V4
Abstract: No abstract text available
Text: S3V4 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V2R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V6 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V1 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V6R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V3R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V5R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V4R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V2 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V1R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3V3 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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diode S3v3
Abstract: No abstract text available
Text: S3V3 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5V and -15V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.
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IDTQS3VH126
Abstract: QS3VH126
Text: IDTQS3VH126 3.3V QUAD ACTIVE HIGH SWITCH FOR HOT SWAP APPLICATIONS INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 3.3V QUAD ACTIVE HIGH SWITCH FOR HOT SWAP APPLICATIONS HOTSWITCH IDTQS3VH126 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH126
500MHz
SO16-7)
SO14-1)
3VH126
IDTQS3VH126
QS3VH126
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IDTQS3VH251
Abstract: QS3VH251
Text: IDTQS3VH251 2.5V / 3.3V QUAD 8:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 8:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH251 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH251
500MHz
10MHz;
IDTQS3VH251
QS3VH251
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IDTQS3VH257
Abstract: QS3VH257
Text: IDTQS3VH257 2.5V / 3.3V QUAD 2:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V QUAD 2:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH257 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS3VH257
500MHz
10MHz;
IDTQS3VH257
QS3VH257
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DIODE S3V 43
Abstract: DIODE S3V S3V Diode S3V20 DIODE S3V20 KM-105 S3v60
Text: Axial Diode Rectifier Diode OUTLINE DIMENSIONS S3V 600V 3.5A 43 f i •raltJ± •Bstticffinsflistt •g Ü g tg * ti5 RATINGS •ifê$Î:ü:*;/Ëfë Absolute Maximum Ratings mItema Storage Temperature Operating Junction Tem perature -e ^aa w E Maximum Reverse Voltage
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S3V20
S3V60
J514-5
DIODE S3V 43
DIODE S3V
S3V Diode
DIODE S3V20
KM-105
S3v60
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S3V 8* Rectifier
Abstract: SHINDENGEN* DIODE S3V60 DIODE S3V 40 shindengen rectifier S3V 84 DIODE S3V SHINDENGEN DIODE
Text: Rectifier Diode Axial Diode OUTLINE DIMENSIONS S3V 600V 3.5A •B iß f f l iS •Si • * 3 , OA. STO •Æfl. B«, TA • Ë të H RATINGS A bsolute M ax im u m Ratings « S to tt* Storage Temperature Operating Junction Temperature Maximum Reverse Voltage
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S3V20
S3V60
20X20
50HziF.
S3V 8* Rectifier
SHINDENGEN* DIODE S3V60
DIODE S3V 40
shindengen rectifier
S3V 84
DIODE S3V
SHINDENGEN DIODE
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DIODE S3V 63
Abstract: No abstract text available
Text: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band
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24MIN
S3V60Z
DIODE S3V 63
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Untitled
Abstract: No abstract text available
Text: Axial Diode Single Diode • O U T L IN E D IM E N S IO N S S3VD 600V 3.5A ■ R A T IN G S Absolute Maximum Ratings iM n n @ Item Sym bol 4& 'Ut g n d iL s - A a t 0° - T y p e ^ N o . -^ S 3V 20 T s tg S t o r a g e T e m p e ra tu re
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