Untitled
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
SFPB-59
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SFPJ-73
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
SFPJ-73
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Untitled
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
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Untitled
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
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Untitled
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
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Untitled
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
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Untitled
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
PB-76
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MPE-220A
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
O-220F2Pin
MPE-220A
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FME-2104
Abstract: FME-2106 FME-210B FME-220A FME-220B FME-230A FME-230B FME-24H SFPE-64 SFPJ-53
Text: 4-4 Schottky Barrier Diode Low IR “E Series” ●Surface-Mount V RM V 40 IF (AV) (A) 2.0 Package Axial (Body Diameter/Lead Diameter) Surface-Mount (SFP) Part Number IFSM (A) 50Hz Single Half Sine Wave SFPE-64 40 Tj (°C) T stg (°C) -40 to +150 VF (V)
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SFPE-64
O-220F2Pin
O-220F
FME-2104
FME-2106
FME-210B
FME-220A
FME-220B
FME-230A
FME-230B
FME-24H
SFPE-64
SFPJ-53
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D1F40
Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Text: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A
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2SA1796
2SC4668
2SC4669
2SK1194
2SK1672
2SK1533
2SK1195
D1F10
D2F10
D1F20
D1F40
S1ZB40
200v 10A mosfet
diode 2f
DIODE D1F20
S1ZA40
diode rm 62
mosfet 600V 30A
S1WB S 40 68
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5516 DIODE
Abstract: No abstract text available
Text: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm
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mcc 55-12
Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Text: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm
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T-25-23
TVJ-450C
K21-0120
K21-0180
K21-0265
K41-0150
mcc 55-12
mcc 40-12
MCC 65-16
ABB mcc
mcc 65-12
MCC 55-08
mcc 55-16
MCC 40 -14io8
ABB mcc 40-12
MCC 40 -12io8
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Laser Diode for DVD-R
Abstract: No abstract text available
Text: EL6290C e la n te c e l 629oc Loser Diode Driver with Waveform Generator h ig h p e r f o rm a n c e a n a l o g in t e g r a t e d c i r c u i t s Features General Description • Complete programmable laser diode driver The EL6290C is a highly integrated laser diode driver designed to sup
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EL6290C
629oc
250mA
100mAp-p
500MHz
25Mb/sec
Desc6290C
EL6290C
24-lead
32-lead
Laser Diode for DVD-R
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LR 2703
Abstract: 1SS244 DO-34 ROHM ROHM 1SS244 diode switching do-34 rohm
Text: 1SS244 Diodes High-voltage switching diode 1SS244 ! Applications ! External dim ensions Units : mm High voltage switching General purpose rectification I Features 1) High reliability. 2) Glass sealed envelope. (MSD) 3) V rm=250V Guaranteed. I Construction
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1SS244
1SS244
LR 2703
DO-34 ROHM
ROHM 1SS244
diode switching do-34 rohm
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Honey Technology
Abstract: MCL245 55199
Text: MCL245 SILICON EPITAXIAL PLANAR DIODE Absolute Maximum Ratings Ta= 25°C Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage V rm 250 V Mean Rectified Current lo 200 mA Maximum Forward Current Ifm 625 mA Surge Forward Current at t<1s and Tj= 25°C
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MCL245
200mA
22lectrodes
100uA
1996-MWtGOfivA
Honey Technology
MCL245
55199
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MC34017
Abstract: MC14011B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC34017 A d v an ce In fo rm a tio n TELEPHONE TONE RINGER TELEPHONE TONE RINGER • Complete Telephone Bell Replacement Circuit with M inim um External Components BIPOLAR LINEAR/I2L • On-Chip Diode Bridge and Transient Protection
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MC34017
C34017-1:
MC34017-2:
MC34017-3:
MC34017-1
MC34017
MC14011B
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rba-406b
Abstract: rk36 diode RBA406B RK36 diode schottky AK03 CTB-34M schottky BARRIER diode RK33 DIODE RK14 RK44 SFPB-76
Text: POWER SCHOTT DIODE iS P H B ' +T+ vs-~ ; -¿1 *h SCHOTTKY BABRIEB DIODES CENTER-TAP TYPE SCHOTTKY BAKEUER DIODES Absolute Maximum Ratings (TA=25°C) Type No. V rm Io If s m (V ) (A) (A) with Fin SFPB-52 20 1.0 Vf Max. @ iF (V ) 30 0.47 SFPB-62 20 2.0 SFPB-72
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SFPB-52
SFPB-62
CTB-24L
CTB-34
CTB-34M
FMB-26
FMB-26L
FMB-36
FMB-36M
FMB-29
rba-406b
rk36 diode
RBA406B
RK36 diode schottky
AK03
schottky BARRIER diode RK33
DIODE RK14
RK44
SFPB-76
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Equivalent ana 650
Abstract: 3.3V ZENER DIODE zener Diode SMB ana 650 1N5956B SMBG5913 SMBG5914 SMBJ5956B
Text: SMBG5913 thru SMBG5956B and SMBJ5913 thru SMBJ5956B MicrosemiCorp. ^ Tho diode experts / SANTA A N A , CA SCOTTSDALE, A Z For m ore in fo rm ation call: 602 941-6300 SILICON 1.5 WATT ZENER DIODES SURFACE MOUNT Features • • • • SURFACE MOUNT EQUIVALENT TO 1N5913THRU 1N5956B
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SMBG5913
SMBC5956B
CIUIDICQ43
IDJ53
SMBJ5956B
1N5913THRU
1N5956B
Equivalent ana 650
3.3V ZENER DIODE
zener Diode SMB
ana 650
1N5956B
SMBG5914
SMBJ5956B
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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1N5523 DO7
Abstract: 1n5525
Text: 1N5518 thru Mierosemi Corp. 1N5546 $ The diode experts SANTA ANA, CA SCOTTSDALE, AZ For m ore in fo rm a tio n call: 6 02 941-6300 FEATURES LOW VOLTAGE AVALANCHE D IO D E S DO-7 • LOW ZENER NOISE SPECIFIED • LOW ZEN ERIM PED AN C E • LOW LEAKAGE CURRENT
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1N5518
1N5546
1N5518
N5546B
MIL-S-19500/437
375-inches
1N5546
1N5523 DO7
1n5525
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ed7 diode
Abstract: 2DI50M-120
Text: 2DI50M-1 20 50A / ' 7 — \ ~7 '•/'J’ TsÇ I 3.—JU : Outline Drawings POWER TRANSISTOR MODULE Features • • High A rm Short Circuit Capability • h F E *''S v.' High D C C urrent Gain • ~7l) — t M V>9'9*A — KftflR Including Free W heelin g Diode
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2DI50M-120
E82988
ed7 diode
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SG238D
Abstract: SY438D
Text: SEC ELECTRON DEV,CE PRELIMINARY SPECIFICATION / LIGHT EMITTING DIODE / SG238D FASHION LAMP Green -N E P O C SERIES DESCRIPTIO N The SG238D is a fu ll resin-molded LED lamp and has a rectangular fla t face w hich em its b rillia n t green lig h t u n ifo rm ly . It is
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SG238D
SG238D
SR538D)
SY438D
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1N5007
Abstract: n5993 1fm5
Text: 1N5985 thru 1N6031 Microsemi Corp. $ The diode expens Í SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES • Popular DO-35 Pack ag e — Sm all and Rugged ■ Double Slug Construction ■ Constructed with an Oxide Passivated All Diffused Die
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1N5985
1N6031
DO-35
100mA:
1N5007
n5993
1fm5
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4753A
Abstract: 1N4728 1N4764 DO-213AB MLL4728 MLL4728A MLL4729A MLL4731A MLL4764
Text: M LL4728 thru M LL4764 Micro/semi Corp. The diode experts SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 SANTA A N A , CA DESCRIPTION/FEATURES • LEADLESS PACKAGE FOR SURFACE M O UN T TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING
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MLL4728
MLL4764
1N4728
1N4764
DO-41
4753A
DO-213AB
MLL4728A
MLL4729A
MLL4731A
MLL4764
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