philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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BAW56 application note
Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Text: BAW56 Silicon Switching Diode Array 3 For high-speed switching applications Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR
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BAW56
VPS05161
EHA07006
EHB00091
EHB00092
Jul-31-2001
EHB00093
BAW56 application note
A1s sot23
BAW56
V6010
ta1504
A2 SOT23
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BAV99
Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Text: BAV99 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99
VPS05161
EHA07005
EHB00076
EHB00077
Jul-30-2001
EHB00078
BAV99
free pdf transistor a7s
bav99 marking
diode bav
A2 SOT23
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BAT62
Abstract: VPS05178
Text: BAT62 Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2
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BAT62
VPS05178
EHA07020
OT143
Aug-23-2001
EHD07061
EHD07062
900MHz
BAT62
VPS05178
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diode c02
Abstract: diode c23 MBK441 All smd diode marking bb202 smd marking code C23 SOD523 marking c2
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB202 Low-voltage variable capacitance diode Product specification 2002 Feb 18 Philips Semiconductors Product specification Low-voltage variable capacitance diode FEATURES BB202 MARKING • Very steep C/V curve TYPE NUMBER
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M3D319
BB202
BB202
SCA74
613514/01/pp8
diode c02
diode c23
MBK441
All smd diode marking
smd marking code C23
SOD523 marking c2
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A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
Text: BAW101 Silicon Switching Diode Array 3 Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW101
VPS05178
EHA07008
OT143
EHN00019
Aug-20-2001
EHB00104
EHB00103
A1 SOT143
VPS05178
BAW101
EHA07008
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450KW
Abstract: No abstract text available
Text: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values
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Q62702-A1004
OT-143
450KW
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b631 transistor
Abstract: S3 marking DIODE b631 Q62702-B631
Text: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23
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Q62702-B631
OT-23
Jan-09-1997
b631 transistor
S3 marking DIODE
b631
Q62702-B631
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BBY53-05W
Abstract: VSO05561
Text: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W
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BBY53-05W
VSO05561
EHA07179
OT323
Jul-02-2001
BBY53-05W
VSO05561
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BAT62-07W
Abstract: VPS05605
Text: BAT62-07W Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz 4 frequencies 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62-07W 62s Pin Configuration 1=C1 2=C2 3=A2
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BAT62-07W
VPS05605
EHA07008
OT343
Jul-06-2001
BAT62-07W
VPS05605
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bat 62 diode
Abstract: No abstract text available
Text: BAT 62-07W Silicon Schottky Diode 3 • Low barrier diode for detectors up to GHz 4 frequencies 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 62-07W 62s Pin Configuration 1=C1 2=C2
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2-07W
VPS05605
EHA07008
OT-343
Oct-07-1999
bat 62 diode
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VPS05178
Abstract: No abstract text available
Text: BBY 51-07 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation 4 • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51-07 HHs Pin Configuration 1 = C1 2 = C2 3 = A2 VPS05178 Package
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VPS05178
OT-143
Oct-05-1999
EHD07128
EHD07129
VPS05178
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VPS05178
Abstract: bat 62 diode
Text: BAT 62 Silicon Schottky Diode 3 • Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 62 62s Pin Configuration 1 = A1 2 = C2 3 = A2
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VPS05178
EHA07020
OT-143
Oct-07-1999
EHD07061
EHD07062
900MHz
EHD07063
VPS05178
bat 62 diode
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SOT JPs
Abstract: VPS05178 EHA07008
Text: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05178
EHA07008
OT-143
EHN00019
100ns,
Oct-08-1999
EHB00102
EHB00104
EHB00103
SOT JPs
VPS05178
EHA07008
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VSO05561
Abstract: No abstract text available
Text: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2
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2-05W
VSO05561
EHA07179
OT-323
May-20-1999
VSO05561
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bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
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Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
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BAV70W
Abstract: VSO05561 10TSV
Text: BAV70W Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70W
VSO05561
EHA07179
OT323
Jul-06-2001
EHB00068
EHB00065
BAV70W
VSO05561
10TSV
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SC75
Abstract: BAV70T
Text: BAV70T Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70T
VPS05996
EHA07179
Aug-24-2001
EHB00068
EHB00065
SC75
BAV70T
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BAW156
Abstract: No abstract text available
Text: BAW156 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW156
VPS05161
EHA07006
EHB00107
Aug-20-2001
EHB00108
BAW156
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VSO05561
Abstract: No abstract text available
Text: BBY 53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W
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3-05W
VSO05561
EHA07179
OT-323
Oct-05-1999
VSO05561
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage
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OCR Scan
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PDF
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Q62702-A3466
OT-343
EHN00019
100ns,
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6A1 diode
Abstract: marking code 76s 7006S 6A1 MARKING
Text: SIEMENS BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 3 • Available with CECC quality assessment A1/A2 2 C2 1 . R FI Type Marking
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OCR Scan
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PDF
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70-06S
VPS05604
Q62702-A3469
OT-363
100ns)
6A1 diode
marking code 76s
7006S
6A1 MARKING
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