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    DIODE L 2 . 71 Search Results

    DIODE L 2 . 71 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE L 2 . 71 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    st 95160

    Abstract: No abstract text available
    Text: PD- 95160 IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free Description FETKY MOSFET & Schottky Diode 1 8 K A 2 7 K S


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    PDF IRF5803D2PbF EIA-481 EIA-541. st 95160

    Untitled

    Abstract: No abstract text available
    Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7


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    PDF 91705B IRF7322D1 EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D


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    PDF 91412M IRF7422D2 EIA-481 EIA-541.

    IRF7322D1

    Abstract: IRF7807D1 MS-012AA
    Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7


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    PDF 91705B IRF7322D1 EIA-481 EIA-541. IRF7322D1 IRF7807D1 MS-012AA

    IRF7321D2

    Abstract: No abstract text available
    Text: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2


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    PDF 91667D IRF7321D2 EIA-481 EIA-541. IRF7321D2

    Untitled

    Abstract: No abstract text available
    Text: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2


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    PDF 91667D IRF7321D2 EIA-481 EIA-541.

    IRF7422D2

    Abstract: MS-012AA
    Text: PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D


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    PDF 91412M IRF7422D2 EIA-481 EIA-541. IRF7422D2 MS-012AA

    ixys MDD 26 - 14

    Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l


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    IRF7101

    Abstract: IRF7421D1 diode schottky 117c
    Text: PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode 1 8 2 7 3 6 4 5 A A D VDSS = 30V D


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    PDF IRF7421D1 IRF7101 IRF7421D1 diode schottky 117c

    IRF7422D2

    Abstract: No abstract text available
    Text: PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8 2 7 3 6 4 5 A A D VDSS = -20V D RDS on = 0.09Ω


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    PDF IRF7422D2 IRF7422D2

    c9v diode

    Abstract: 6914 sot23 Marking f7 c9v 57 KDV1430
    Text: KDV1430 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES ᴌHigh Capacitance Ratio : C2V/C9V=3.7ᴕ5.0 E B L L ᴌLow rS : rS=0.5ή Max. . 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ)


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    PDF KDV1430 c9v diode 6914 sot23 Marking f7 c9v 57 KDV1430

    A5 sot-23 single DIODE

    Abstract: smd diode a5 A5 sot-23 DIODE smd marking diode pack BAV74 SOT-23 A5 330 marking diode smd diode marking JA sot-23 marking 415 sot23
    Text: Transys Electronics L I M I T E D SILICON PLANAR DUAL SWITCHING DIODE. BAV74 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV74 - A5 High-Speed Switching Dual Diodes, Common Cathode ABSOLUTE MAXIMUM RATINGS Rating Per Diode


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    PDF BAV74 OT-23 BAV74 OT-23 A5 sot-23 single DIODE smd diode a5 A5 sot-23 DIODE smd marking diode pack SOT-23 A5 330 marking diode smd diode marking JA sot-23 marking 415 sot23

    Untitled

    Abstract: No abstract text available
    Text: 1SS277WT BAND SWITCHING DIODE Applications • Low loss band switching in VHF television tuners • Surface mount band switching circuits PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 L Top View Marking Code: "L" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC


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    PDF 1SS277WT OD-523 OD-523

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o l o g y 2 1 CH !—O 1 - Cathode 2 -Anode Back of Case - Cathode APT30D30B 300V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode •Switchmode Power Supply -Inverters • Free Wheeling Diode


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    PDF APT30D30B O-247 40A/ns, -240A/HS, O-247AD

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Single Diode W tm SF5S4 40V OUTLINE fk K g IB M Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • 71 [ Æ - J U K • Full Molded • Dielectric Strength 2kV • l Ë S I f f i 2 kV S ï l


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y 8 Back of Case -Cathode - APT30D40S - 1 400V 30A 2 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode


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    PDF APT30D40S

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE 30KF50E 30KF50B 33A/500V/trr:70nsec F EA TU R ES I5.9l.626l T 15.3s 60-1 / 3 . 4 l . 'i 5 4 D IA 5 3 .209) 4 71.185) 5.3 1 2 0 9 ) ~i I*“ *! X i ° Similar to TO - 247AC Case 4TT.IS5> ° Ultra - Fast Recovery f ; r .7 t.2 2 4 l 5 .3 (2 0 8 )


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    PDF 247AC 3A/500V/trr 70nsec 30KF50E 30KF50B

    1CHX

    Abstract: 7228A bi phase modulator
    Text: Series 71, 12 Bit Digital and Series 72 Analog l-Q Vector Modulators Both Series comprise a family of four solidstate PIN diode l-Q Vector Modulators covering the frequency range from 0.5 to 18 GHz in four bands; 0.5 to 2 GHz, 2 to 6 GHz, 4 to 12 GHz and 6 to 18 GHz. See Fig. 1.


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    2-GT-44

    Abstract: 2-GT-35 2-GT-31 2GT30
    Text: LINEARIZED, VOLTAGE CONTROLLED, ABSORPTIVE, CONTINUOUSLY VARIABLE ATTENUATORS, PIN DIODE SER IES 2-GT 0.25-18 GHz G E N E R A L INFORMATION: KDI/Triangle pin diode attenuators continu­ ously change the amplitude of a microwave signal by applying a varying


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP7N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP7N60ED In su late d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 7.0 A @ 90°C


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    PDF MGP7N60ED/D

    DD-37

    Abstract: No abstract text available
    Text: b2E » • bM27525 N E c ELEcmmcs / DD37MÖÜ 2 bT « N E C E INC - W S E R DIODE NDL5083 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 3 is a 1 3 1 0 nm laser diode especially designed fo r optica l data com m unications. The Mesa-type DC-PBH Double


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    PDF bM27525 DD37MÖ NDL5083 b427525 Q037462 DD-37

    chn 702

    Abstract: chn 090 LMSW43LA-215 VC-2R diode fr 207
    Text: Microwave Modules RF Diode Switches RF Diode SW with Integrated LPF 1.8+0 2 0 . 7 t0 2 r o l 2 (3) U U U - □ n r \ M a n ufa ctu re r's N am e Code (1 ) : R x (2)(4)(8) . GN D (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2 i r a 0 351:0.2 1 .2 7 *0 1 LMSW43LA-215


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    PDF LMSW43LA-215 mr71j LMSW43CA-209 43CA-218 LMSW43CA-209 LMSW43CA-218 chn 702 chn 090 LMSW43LA-215 VC-2R diode fr 207

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y ' 1 - Cathode 2 -Anode Back of Case-Cathode APT30D60S 600V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters


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    PDF APT30D60S

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P o w er Te c h n o l o g y 1 - Cathode 2 -Anode Back of Case - Cathode APT15D60B 600V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters


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    PDF APT15D60B O-247 O-247AD 00G2153