diode GG 64
Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO
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2Gl024
2N2512
2G383
2Gl025
2Gl025
diode GG 64
diode GG 71
AF118
Low-Power Germanium PNP
ACY39
2N240
2G201
2G302
2N3604
ACY24
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044H11
Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S
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044H10
KSP1152
KSP1172
OT7A09
OT7S09
2N3714
B0245B
044H11
KT808B
kt808BM
BJG 36
kt808
2s021
B0313
2n1810
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bcy591x
Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18
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BC382
KSC1072
2SC538A
BCX59-9
BCX70J
BCY591X
TBC337A
BCW66RG
2N6429A
2N2196
2N2147
2N2214
2N2161
2N2207
BC521
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2n185
Abstract: BC3 csr 2N244 2N200 BC337-18 2N326 2N176 BC337-16-5 BC337-10 Delco
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434
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2N2523
MPS929
MPS930
BC485
BC485-18
2n185
BC3 csr
2N244
2N200
BC337-18
2N326
2N176
BC337-16-5
BC337-10
Delco
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mpc apc
Abstract: CX02066 CX02066B24 CX02066DIEWP CX02066TQ32 CX02066WAFER MAX3869 TQFP32
Text: CX02066 3.3 Volt Laser Driver IC for Applications to 3 Gbps FEATURES The CX02066 is a highly integrated, programmable laser driver intended for SONET/SDH applications with FEC to 3 Gbps. Using differential PECL data and clock inputs, the CX02066 supplies the bias and
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CX02066
CX02066
mpc apc
CX02066B24
CX02066DIEWP
CX02066TQ32
CX02066WAFER
MAX3869
TQFP32
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2N4007 diode
Abstract: Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y
Text: LOW-POWER SILICON PNP Item Number Part Number HA7806 HA7808 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 10 ~~~~;~ 2S3021 2S3021 2N2004 2N1228 2N2370 2N2372 2S3221 2Nl027 15 20 ~~~~H 2N862 KT209A KT501A KT501B BCY49 2N1229 2N4007 A5T5221 2N5221 2N995
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HA7806
HA7808
MPSH69
2N2005
2N2334
2N2335
2N3318
2N917
2Nl024
2N4007 diode
Transistor NEC 12d
KT501A
2U diode
PB6015A
PB6015B
KT209B
2u 85
kts3103b
2SA1362Y
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diode GG 79
Abstract: HSCH-5511 HSCH5530 HSCH-5531 HSCH5510
Text: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The Antiparallel Pair The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly
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HSCH-5500
5953-4492E
diode GG 79
HSCH-5511
HSCH5530
HSCH-5531
HSCH5510
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Diode SE-05
Abstract: No abstract text available
Text: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were
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HSCH-5500
5953-4492E
Diode SE-05
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HSCH5530
Abstract: HSCH5511 HSCH-5531 HSCH-5511
Text: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were
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HSCH-5500
5953-4492E
HSCH5530
HSCH5511
HSCH-5531
HSCH-5511
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SF30BG
Abstract: SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG SF30AG
Text: SF30AG–SF30JG Vishay Lite–On Power Semiconductor 3.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage
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SF30AG
SF30JG
SF30AG
SF30BG
SF30CG
SF30DG
SF30FG
SF30GG
SF30HG
SF30BG
SF30CG
SF30DG
SF30FG
SF30GG
SF30HG
SF30JG
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SF20CG
Abstract: SF20AG SF20BG SF20DG SF20FG SF20GG SF20HG SF20JG
Text: SF20AG–SF20JG Vishay Lite–On Power Semiconductor 2.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage
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SF20AG
SF20JG
SF20AG
SF20BG
SF20CG
SF20DG
SF20FG
SF20GG
SF20HG
SF20CG
SF20BG
SF20DG
SF20FG
SF20GG
SF20HG
SF20JG
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2SC1312
Abstract: 2SC1840E BA 92 SAMSUNG TI480 2N2888 LOW-POWER SILICON NPN 2SC900 PET8002 2N2856 25M SOT89
Text: LOW-POWER SILICON NPN Item Number Part Number 5 -10 NB211XJ NB211YJ MMBC1622D7 MMBC1622D7 MMBC1622D7 2SC1840F 2SCl840F NBOllEU NBOllFU NB013EU ~gg~~~~ -15 20 NBOllFK NB013EK NB013FK NB013FL PET8002 PET8004 MMBC1622D8 MMBC1622D8 TMPT1622000 25 30 2SC1840E 2SCl840E
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NB211XJ
NB211YJ
MMBC1622D7
2SC1840F
2SCl840F
NB013EU
NB013EK
NB013FK
2SC1312
2SC1840E
BA 92 SAMSUNG
TI480
2N2888
LOW-POWER SILICON NPN
2SC900
PET8002
2N2856
25M SOT89
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D1192
Abstract: 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66
Text: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 25 30 40 2S0369Y SOT701S SOT701S SOT701S 2N3920 2N50S4 2SC3255R 2SC3593 2SC3255S Solitron PPC Product PPC Product Sid St Dvcs See Index See Index See Index Mallory Indust Mexi See Index :sanyo Elect
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OT7A02
OT7B01
OT7602
2N3919
2N3715
PTC116
2S03690
2N5622
D1192
2SC3593
BOT93
diode GG 71
RCA1C07
acrian inc
diode 2U 66
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SF10AG
Abstract: SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
Text: SF10AG–SF10JG Vishay Lite–On Power Semiconductor 1.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Ultra–fast switching for high efficiency High current capability and low forward voltage
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SF10AG
SF10JG
SF10AG
SF10BG
SF10CG
SF10DG
SF10FG
SF10GG
SF10HG
SF10BG
SF10CG
SF10DG
SF10FG
SF10GG
SF10HG
SF10JG
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Low-Power Germanium PNP
Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67
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2N422
2Nl09
2N217
2N274
2N633
2N1415
2N1866
2N1998
2N598
GT125SZ
Low-Power Germanium PNP
2N218
ASZ20
2N295
Diode 13M
2N2374
CK66A
2N466
TO9 package
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gc 5.5V 1.0F
Abstract: AN 17823 17823 OLED driver IC MXED101 MXED101DI MXED101TP 5.5V 1.0f GC
Text: MXED101 30V, 192-Channel OLED Display Driver General Description Features: • CMOS technology • 192 Precision outputs • Programmable output current control • Optimized adjacent channel and chip-to-chip output matching • 3.3V or 5V logic supply voltage
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MXED101
192-Channel
MXED101TP)
MXED101DI)
MXED101
192-output
DS-MXED101-R9
gc 5.5V 1.0F
AN 17823
17823
OLED driver IC
MXED101DI
MXED101TP
5.5V 1.0f GC
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Untitled
Abstract: No abstract text available
Text: PDSP16330/A/B HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: 0793 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017,
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PDSP16330/A/B
7023s
10MHz
84-pin
PDSP16112
PDSP16116
PDSP16318
PDSP16340
PDSP16350
PDSP16510A
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2N904
Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475
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2N997
2SC982TM
MMBT100
MMBT200
MMBT3642
MPSS545
BC817
2N904
2N929 texas
2N906
2N905
Emihus
2N828
2N843
2N928
2N850
LOW-POWER SILICON NPN
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Legrand transformer
Abstract: legrand 390 61 18 KW motor Legrand* fuses legrand fuse 123 10 bs 3535 diode GG 26 legrand fuse 140 10 aM LEGRAND fuse diode GG 71
Text: control transformers single phase Conform to IEC/EN 61558-2-2; 2-6 24V and 2-4 (>24V) - UL 506 and CSA 22.2 - No. 66 Single-phase 50-60 Hz - class I Insulation voltage between windings : 4 510 V Max. ambient operating temperature : 60°C Protected against accidental contact with live parts up to 1 000 VA
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode W tm D5S9M OUTLINE 90V 5A Feature • Tj=150°C • Tj= 1 5 0°C • P rrsm • 71 [ Æ - J U K Rating • Full M o ld e d Main Use • S w itc h in g R eg u lator • DC/DC □ V A'—^ • D C /D C C o n ve rte r •mm, i f - A .oA d gg
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waveii50Hz
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C322 diode
Abstract: 12n05 p12n05 SEFM12H05
Text: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS
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SEFM12NQ5
SEFM12N06
SEFP12N05
SEFP12N06
0V/60V
12N05
12N06
300jus,
C322 diode
p12n05
SEFM12H05
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diode GG 71
Abstract: Stand Alone FFT Processor diode GG 79 l3915 diode GG 64 PDSP16112 PDSP16116 m15m0 PDSP16330 PDSP16330A
Text: P B y G E C PLESSEY ADVANCE INFORMATION 0S3884 • 1.1 P D S P 1 6 3 3 0 /A /B PYTHAGORAS PROCESSOR Supersedes verston in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1 The PDSP16330 is a high speed digital CMOS IC that converts Cartesian data (Real and Imaginary) intoPolarform
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ds3884
PDSP16330/A/B
HB3923-1)
PDSP16330
20MHz.
10MHz
10MHZ
diode GG 71
Stand Alone FFT Processor
diode GG 79
l3915
diode GG 64
PDSP16112
PDSP16116
m15m0
PDSP16330A
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY ADVANCE INFORMATION S t* M I C O IN D U C T O K S P D S P 1 6 3 3 0 /A /B PYTHAGORAS PROCESSOR Supersedes version in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1 The PDSP16330 is a high speed digital CMOS IC that
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PDF
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HB3923-1)
PDSP16330
20MHz.
PDSP16330
PDSP16330A
PDSP16330B
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Untitled
Abstract: No abstract text available
Text: P JpJ G E C PLESSEY PRELIM INA R Y INFORMATION DS36&4 - 1.0 PDSP16330/A/B PYTHAGORAS PROCESSOR The PDSP16330 is a high speed digital CMOS ICthat converts Cartesian data Real and Imaginary into Polar form (Magnitude and Phase), at rates up to 20MHz. Cartesian
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PDSP16330/A/B
PDSP16330
20MHz.
10MHz
PDSP16330A)
25MHz
PDSP16330)
MILSTD-883
10MHZ
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