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    DIODE GEN 52 Search Results

    DIODE GEN 52 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE GEN 52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V23990-P584

    Abstract: V23990-P584-A
    Text: V23990-P584-A target datasheet nd flow PIM 1 2 gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P584-A 68Ohm D81359 thikness50um Dicke50um V23990-P584 V23990-P584-A

    V23990-P580

    Abstract: V23990-P580-A tyco igbt 1200V
    Text: V23990-P580-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P580-A 40-limited 52Ohm thikness50um Dicke50um D81359 V23990-P580 V23990-P580-A tyco igbt 1200V

    V23990-P589-A

    Abstract: tyco igbt 1200V 36Ohm ND transistor igbt tyco
    Text: V23990-P589-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P589-A 40-limited 52Ohm thikness50um Dicke50um D81359 V23990-P589-A tyco igbt 1200V 36Ohm ND transistor igbt tyco

    V23990-P588-A

    Abstract: V23990-P588 tyco igbt 1200V
    Text: V23990-P588-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P588-A 52Ohm thikness50um Dicke50um D81359 V23990-P588-A V23990-P588 tyco igbt 1200V

    Untitled

    Abstract: No abstract text available
    Text: VS-GB50NA120UX www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package


    Original     		PDF VS-GB50NA120UX OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    VS-GB50LA120UX

    Abstract: No abstract text available
    Text: VS-GB50LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package


    Original     		PDF VS-GB50LA120UX OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GB50LA120UX

    ECONOPACK

    Abstract: 100C EMP50P12B inverter 3 phases schematic e.m.p 250uH
    Text: EMP50P12B EMP50P12B PIM+ Package: EMP Features: Power Module: • • • • NPT IGBTs 50A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.15Vtyp @ 50A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology Low diode VF (1.78Vtyp @ 50A, 25°C)


    Original     		PDF EMP50P12B 15Vtyp 78Vtyp 50ppm/ EMP50P12B ECONOPACK 100C inverter 3 phases schematic e.m.p 250uH

    Untitled

    Abstract: No abstract text available
    Text: GA400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Standard Speed IGBT , 400 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse


    Original     		PDF GA400TD60S E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: RF2312 LI N EAR GEN ERAL PU RPOSE AM PLI FI ER RoHS Compliant & Pb-Free Product Typic a l Applic at ions • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Produc t De sc ript ion


    Original     		PDF RF2312 RF2312 1000MHz, 001GHz

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    Untitled

    Abstract: No abstract text available
    Text: V23990-P722-F74-PM final data sheet fastPACK 0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P722-F74-01-14 P722-F74 600V/30A Symbol Datasheet values Unit max. DC link Capacitor TC=25°C Max.DC voltage UMAX 500 V Vbr 600 V


    Original     		PDF V23990-P722-F74-PM V23990-P722-F74-01-14 P722-F74 00V/30A 2-F74-PM V23990-P722F74

    V23990-P722-F64-PM

    Abstract: No abstract text available
    Text: V23990-P722-F64-PM final data sheet fastPACK 0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P722-F64-01-14 P722-F64 600V/30A Symbol Datasheet values Unit max. DC link Capacitor TC=25°C Max.DC voltage UMAX 500 V Vbr 600 V


    Original     		PDF V23990-P722-F64-PM V23990-P722-F64-01-14 P722-F64 00V/30A 64-PM V23990-P722-F64 V23990-P722-F64-PM

    ECG584 schottky

    Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
    Text: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114


    OCR Scan     		PDF ECG109 ECG110A ECG110MP ECG112 ECG113A ECG114 ECG115 ECG592 ECG593 ECG694 ECG584 schottky diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113

    DIODE SW-05

    Abstract: No abstract text available
    Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40


    OCR Scan     		PDF 110MP OT-23 200MHz T0220 b43125T 0P03SSÃ DIODE SW-05

    Z6 DIODE

    Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
    Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr


    OCR Scan     		PDF ECG109 ECG110A ECG110MP ECG113A ECG114 DO-27 ECG515 ECG551 ECG117A ECG556 Z6 DIODE z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP

    diode ECG125

    Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
    Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time


    OCR Scan     		PDF bb53R2fi ECG109 ECG110A ECG110MP ECG113A ECG114 1N415C 1N415E 1N416C 1N416E diode ECG125 CI 3060 elsys ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky

    Philips ECG125

    Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
    Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr


    OCR Scan     		PDF Q00720S ECG109 ECG110A ECG110MP ECG112 ECG113A 72OLARITY OT-23 SP-92 ECG615A Philips ECG125 t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151

    common anode schottky to220

    Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
    Text: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)


    OCR Scan     		PDF 110MP OT-23 200MHz T0220 QQ0355Ã common anode schottky to220 diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual

    ecg125 diode

    Abstract: diode ECG125 ECG125 ECG584 schottky ECG577 fast recovery diode 20 a ECG579 Z3 DIODE ECG576 Z6 DIODE
    Text: D io d e s and R ectifiers General Purpose ECG Typ« Peak Reverse Voltage PRV M a x V Description Average Rectified Forward Current !o M ax Forward Current Repetitive Peak •FRM M a x Reverse Recovery lim e trr Forward Voltage Drop M ax VF AFC Fast Sw ECG109


    OCR Scan     		PDF ECG110A ECG110MP ECG112 ECG113A ECG114 ECG115 ECG593 ECG594 ECG596 ecg125 diode diode ECG125 ECG125 ECG584 schottky ECG577 fast recovery diode 20 a ECG579 Z3 DIODE ECG576 Z6 DIODE

    metal rectifier diode

    Abstract: DIODE S2E D026 110MP Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A
    Text: N T E ELECTRONICS TNC S2E D • b 4 3 1 2 S e G Q Q 2 b 3 S ‘H S H N T E T~Ö I - 0 I r I.CHbw .ü t N C r f A L ,r : U B r U O E — T-39-01 Maximum Average Forward Currant Ampe) Max Peek Surge Forward Currant (Ampe) Maximum Forward Vortage Drop (Volts)


    OCR Scan     		PDF b4312Sel 110MP 100pA T0220 metal rectifier diode DIODE S2E D026 Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A

    D 92 M - 02 DIODE

    Abstract: 110MP fast diode 1.5 A diode d07 Super matched pair 1a fast diode
    Text: DIODES AND HECTII NTE Type No. Material Description and Application Case Style Diag. No. Maximum Average Forward Current Amps Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop (Volts) Reverse Recovery Time (ns) P RV If If s m vF *fT 0.5


    OCR Scan     		PDF 110MP Brid200 D027A T0220 D 92 M - 02 DIODE fast diode 1.5 A diode d07 Super matched pair 1a fast diode

    DIODE S2E

    Abstract: No abstract text available
    Text: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery


    OCR Scan     		PDF T-39-01 110MP 100pA T0220 OT-23 DIODE S2E