Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
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LL4151
Abstract: No abstract text available
Text: 1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case
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LL4151.
DO-34,
DO-35
150OC
100MHz,
LL4151
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infrared laser diode
Abstract: Laser-Diode 808 808nm laser diode Laser Diode 808 nm 808nm-5mW 808nm
Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE
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808nm-5mW
808nm
com/n808nm5m
infrared laser diode
Laser-Diode 808
808nm laser diode
Laser Diode 808 nm
808nm
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laser diode
Abstract: Laser Diode 12 pin red laser diode Diode specifications laser diode symbols US-Lasers
Text: US-Lasers: 670nm-5mW-60C Samsung Visible Laser Diode Specifications Page 1 of 1 US-Lasers: 670nm-5mW-50C Visible Laser Diode Specifications Back to Laser Diode Page RED LASER DIODE DATA SHEETS ABSOLUTE MAXIMUM RATINGS Tc=25 °C TECHNICAL DATA Visible laser diode light
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670nm-5mW-60C
670nm-5mW-50C
670nm
com/d670nm5
laser diode
Laser Diode 12 pin
red laser diode
Diode specifications
laser diode symbols
US-Lasers
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Untitled
Abstract: No abstract text available
Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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904nm-5mW
904nm
com/n904nm5m
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10 pin laser diode
Abstract: Laser Diode 10 pin red laser diode RED laser diode operating Temperature laser diode symbols red diode laser laser diode 660nm US-Lasers
Text: US-Lasers: 660nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 660nm-5mW - Red Laser Diode Back to Laser Diodes RED LASER DIODE DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Visible laser diode light 660nm output
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660nm-5mW
660nm
com/d660nm5m
10 pin laser diode
Laser Diode 10 pin
red laser diode
RED laser diode operating Temperature
laser diode symbols
red diode laser
laser diode 660nm
US-Lasers
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Untitled
Abstract: No abstract text available
Text: US-Lasers: 660nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 660nm-5mW - Red Laser Diode Back to Laser Diodes RED LASER DIODE DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Visible laser diode light 660nm output
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660nm-5mW
660nm
com/d660nm5m
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Untitled
Abstract: No abstract text available
Text: US-Lasers: 650nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 650nm-5mW - Red Laser Diode Back to Laser Diodes RED LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Visible laser diode light 650nm output
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650nm-5mW
650nm
com/d650nm5m
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635nm
Abstract: red laser diode 635nm RED laser diode operating Temperature red diode laser 635nm laser modules D635 DIODE 630 laser diode 635nm lens laser diode
Text: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 635nm-5mW - Red Laser Diode Back to Laser Diodes VISIBLE LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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635nm-5mW
635nm
com/d635nm5m
635nm
red laser diode 635nm
RED laser diode operating Temperature
red diode laser
635nm laser modules
D635
DIODE 630
laser diode 635nm
lens laser diode
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DZ800S17K3
Abstract: FF800R17KE3
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data
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DZ800S17K3
DZ800S17K3
FF800R17KE3
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MOZ 23
Abstract: DD1000S33HE3 48 H diode
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
MOZ 23
DD1000S33HE3
48 H diode
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DD1000S33
Abstract: FZ1000R33HE3
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
DD1000S33
FZ1000R33HE3
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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BAS70L
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS70L
OD882
MDB391
SCA75
613514/01/pp8
BAS70L
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1PS10SB63
Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a
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M3D891
1PS10SB63
OD882
MDB391
SCA75
613514/01/pp7
1PS10SB63
MARKING S4 diode schottky
MLE118
S4 DIODE schottky
Schottky barrier sot-23 Marking s4
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Untitled
Abstract: No abstract text available
Text: 1N 4454 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted. Parameter
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DO-34,
DO-35
100MHz,
100uA
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BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
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DZ800S17K3
Abstract: No abstract text available
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DZ800S17K3
DZ800S17K3
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diode
Abstract: No abstract text available
Text: Diode arrays Diode arrays are available in both leaded and surface mount packages. The diode array data sheets are arranged in the following order in this chapter: • surface mount diode arrays • leaded diode arrays The diode arrays are available in the following packages:
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OCR Scan
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SC-59,
OT-23)
OT-323)
diode
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CA3019
Abstract: ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate
Text: Diode Arrays Diode “Quad” and 2 Individual Diodes CA3019 Applications and Features Analog Switch Balanced Modulator Diode Gate for Chopper Modulators Mixer Modulator Telemetry, Data Processing, Instrumentation, and Communications Equipment Excellent diode match
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CA3019
92CS-14254
10-Lead
92CS-15262
12-Lead
CA3039
CA3019
ICAN 5299
diode ring mixer
CA3039
MONOLITHIC DIODE ARRAYS
diode gate
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diode Cathode indicated by blue band
Abstract: No abstract text available
Text: Philips Semiconductors Short-form product specification Silicon planar diode FEATURES BA582 QUICK REFERENCE DATA • Low diode capacitance SYMBOL • Low diode series resistance. Vr continuous reverse voltage If continuous forward current Co diode capacitance
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BA582
OD123
MAM157
OD123)
diode Cathode indicated by blue band
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