Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
037TPY
950TPY
550REF
022REF
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SMD diode D95
Abstract: transistor smd marking BA sot-23 BAT64
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SMALL SIGNAL SCHOTTKY DIODE BAT64 SOT-23 3 Pin Configuration MARKING:- D95 1 = ANODE 2 = NC 3 = CATHODE 1 2 DESCRIPTION General Purpose Schottky Diode Featuring Very Low Turn-on Voltage And Fast Switching.
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ISO/TS16949
BAT64
OT-23
BAT64
C-120
SMD diode D95
transistor smd marking BA sot-23
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Schnelle beschaltungslose Diode D931SH Fast Hard Drive Diode Key Parameters enndaten VRRM 6500 V IFAVM 940 A TC=85 °C IFSM VT0 16000 A 3570A (TC=55°C) 1,99 V rT 1,44 mΩ RthJC 10 K/kW Clamping Force 27 … 47 kN
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D931SH
50/60Hz
50/60Hz
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Schnelle beschaltungslose Diode D911SH Fast Hard Drive Diode Key Parameters enndaten VRRM 4500 V IFAVM 890 A TC=85 °C IFSM VT0 17000 A 3570A (TC=55°C) 2,02 V rT 1,592 mΩ RthJC 10 K/kW Clamping Force 27 … 45 kN
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D911SH
50/60Hz
50/60Hz
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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diode 1334
Abstract: 1334 diode power diode with piv of 30v CA3141E CA3141 high voltage diodes MS-001-BB VF10 e16 diode 533 1334 diode
Text: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial and Military Applications July 1996 Features Description • Matched Monolithic Construction - VF Match Each Diode Pair . . . . 0.55mV At IF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are
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CA3141
CA3141E
CA3141
1-800-4-HARRIS
diode 1334
1334 diode
power diode with piv of 30v
high voltage diodes
MS-001-BB
VF10
e16 diode
533 1334 diode
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CA3141E
Abstract: ca3141 VF10
Text: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial & Military Applications March 1993 Features Description • Matched Monolithic Construction - VF for Each Diode Pair Matched to Within 0.55mV Typ at lF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are
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CA3141
CA3141E
CA3141
VF10
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BA159
Abstract: ba159 diode diode BA159 10A DIODE 1000C 500C
Text: BA159 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic
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BA159
MIL-STD-202,
1000C
BA159
ba159 diode
diode BA159
10A DIODE
1000C
500C
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fdfs6n303
Abstract: F011 F63TNR F852 L86Z SOIC-16
Text: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
050lopment.
fdfs6n303
F011
F63TNR
F852
L86Z
SOIC-16
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TO38 Laser
Abstract: 450nm
Text: Blaue Laser Diode in TO38 ICut Bauform Blue Laser Diode in TO38 ICut Package PL 450 Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Transversal Monomode Halbleiterlaser
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450nm
TO38 Laser
450nm
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Untitled
Abstract: No abstract text available
Text: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 3F20 SKR 3F20 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>- @$A BC +( 57DE6 3FG
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573FG
563FG
S577U
75l5I
bA67ED
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BY397
Abstract: ba159 diode 500C 550C BA159 diode BA159
Text: BY397 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 3.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic
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BY397
MIL-STD-202,
DO-201AD
201AD
DO-27)
BY397
ba159 diode
500C
550C
BA159
diode BA159
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a7840
Abstract: fdfs6n303
Text: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductors FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and
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FDFS6N303
a7840
fdfs6n303
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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2P102
Abstract: F011 F63TNR F852 FDFS2P102 L86Z
Text: August 1999 FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.47V Schottky diode into a single surface mount power package. The
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FDFS2P102
2P102
F011
F63TNR
F852
FDFS2P102
L86Z
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Q65110A8642
Abstract: Wavelength 450nm TO38 Laser
Text: Blaue Laser Diode in TO38 ICut Bauform Blue Laser Diode in TO38 ICut Package PL T4 NSB Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Transversal Monomode Halbleiterlaser
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450nm
Q65110A8642
Wavelength 450nm
TO38 Laser
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TO38 Laser
Abstract: PL 450B blue Laser-Diode 450B
Text: Blaue Laser Diode in TO38 ICut Bauform Blue Laser Diode in TO38 ICut Package PL 450B PRELIMINARY Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Transversal Monomode Halbleiterlaser
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450nm
TO38 Laser
PL 450B
blue Laser-Diode
450B
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DIODE T4 symbol
Abstract: NS-B
Text: Blaue Laser Diode in TO38 ICut Bauform Blue Laser Diode in TO38 ICut Package PL T4 NSB VORLÄUFIGES Datenblatt PRELIMINARY Datasheet Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus
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450nm
DIODE T4 symbol
NS-B
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Untitled
Abstract: No abstract text available
Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.0V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V0K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
60-cycle
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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Untitled
Abstract: No abstract text available
Text: BYT 30P-1000 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME Cathode connected to case ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SO D93 Plastic SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS
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30P-1000
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14GT8
Abstract: I-TD92-3 ET-T1554 Scans-0017297 general electric 14gt8 tube
Text: 14GT8 14GT8 ET-T1554 Page 1 DUPLEX-DiODE TRIODE TUBES 10-59 FOR DETECTOR AND AF VOLTAGE-AMPLIFIER APPLICATIONS DESCRIPTION AND RATING =— The 14GT8 is a duplex-diode, high-mu triode with separate cathodes for each of the diode sections and the triode section. The tube is primarily
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14GT8
ET-T1554
14GT8
K-556II-TD92-I
K-556I1-TD92-2
K-556
I-TD92-3
I-TD92-3
ET-T1554
Scans-0017297
general electric
14gt8 tube
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sin 4145
Abstract: DD90F 120J125
Text: SANSHA ELECTRIC MFG CO 37E D DOGüO'ia T Ö S E M J f - 2,3-0? / DIODE MODULE SanRex Power Diode Module DD 90F series are designed for various rectifier circuits. DD90F has two diode chips connected in series in 25 mm 1 inch width package and the .mounting base is electrically isolated from elements for simple heatsink construction.
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DD90F
DD90F-4p
sin 4145
120J125
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