NNCD18ST
Abstract: NNCD18ST-T1-AT
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and
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NNCD36ST
NNCD18ST
NNCD36ST
IEC61000-4-2
SC-70)
NNCD18ST-T1-AT
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d1887
Abstract: nec 2114 NNCD27DA-T1-AT NNCD5.1DA NNCD2 SC-76 NNCD6.8D-A
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD4.7DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,
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NNCD39DA
IEC61000-4-2
IEC61000-4-2)
d1887
nec 2114
NNCD27DA-T1-AT
NNCD5.1DA
NNCD2
SC-76
NNCD6.8D-A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,
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NNCD39DA
IEC61000-4-2
IEC61000-4-2)
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d1887
Abstract: NNCD3.9DA diode 6da ac 4DA NNCD36DA NNCD5.1DA
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,
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NNCD39DA
IEC61000-4-2
IEC61000-4-2)
M8E0909E)
d1887
NNCD3.9DA
diode 6da
ac 4DA
NNCD36DA
NNCD5.1DA
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NNCD18ST
Abstract: NNCD18ST-T1-AT NNCD27ST-T1-AT NNCD36ST
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and
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NNCD36ST
IEC61000-4-2
SC-70)
NNCD18ST
NNCD36ST
NNCD18ST-T1-AT
NNCD27ST-T1-AT
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and
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NNCD36ST
IEC61000-4-2
SC-70)
NNCD18ST
NNCD36ST
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D1887
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,
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NNCD39DA
IEC61000-4-2
IEC61000-4-2)
D1887
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.
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IEC61000-4-2
SC-76)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.
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IEC61000-4-2
SC-76)
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nec 1251
Abstract: SC-76 D1888 nec p 65 PF30r
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.
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IEC61000-4-2
SC-76)
nec 1251
SC-76
D1888
nec p 65
PF30r
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NNCD20DT-T1-AT
Abstract: NNCD36DT NNCD18DT nec 1251 NNCD27DT NNCD36DT-T1-AT lin bus application NNCD20DT d18880 SC-76
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1
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NNCD18DT
NNCD36DT
NNCD36DT
IEC61000-4-2
SC-76)
NNCD20DT-T1-AT
nec 1251
NNCD27DT
NNCD36DT-T1-AT
lin bus application
NNCD20DT
d18880
SC-76
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1
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NNCD18DT
NNCD36DT
NNCD36DT
IEC61000-4-2
SC-76)
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NNCD18DT-T1-AT
Abstract: No abstract text available
Text: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1
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NNCD18DT
NNCD36DT
NNCD36DT
IEC61000-4-2
SC-76)
NNCD18DT-T1-AT
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d1889
Abstract: 2SK3653C marking EE
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653C contains a diode and high resistivity 0.2 time during power-on. In addition, because of its compact
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2SK3653C
2SK3653C
d1889
marking EE
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d1889
Abstract: 2SK3230C SC-89 marking EE
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230C contains a diode and high resistivity 3 0.8 ±0.1 phones. 1.6 ±0.1 for compact ECMs for audio or mobile devices such as cell-
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2SK3230C
2SK3230C
d1889
SC-89
marking EE
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CHSD6-60C
Abstract: CHSD6 a26544 C0805C473K5RAC CMPZ524B 1808JA250102MCTPY2 LM5072 PJ-102A LM5073 LM5576
Text: National Semiconductor Application Note 1574 Youhao Xi March 2007 Introduction Precautions The LM5073 evaluation board is designed as a low cost solution for both IEEE802.3af fully compliant and non-compliant Power over Ethernet PoE PD applications. The board also
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LM5073
IEEE802
LM5576
AN-1574
CHSD6-60C
CHSD6
a26544
C0805C473K5RAC
CMPZ524B
1808JA250102MCTPY2
LM5072
PJ-102A
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180N04
Abstract: d1889 NP180N04TUG TO-263-7pin NP180 NP180N04TUG-E2-AY MP-25ZT NP180N04TUG-E1-AY NP180N04TUG-E1-AY in date code marking NEC
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP180N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP180N04TUG-E1-AY
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NP180N04TUG
NP180N04TUG
NP180N04TUG-E1-AY
NP180N04TUG-E2-AY
O-263-7pin
MP-25ZT)
O-263-7pin)
180N04
d1889
TO-263-7pin
NP180
NP180N04TUG-E2-AY
MP-25ZT
NP180N04TUG-E1-AY
NP180N04TUG-E1-AY in
date code marking NEC
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K4078
Abstract: C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY 2SK4078 D18885EJ1V0DS
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY
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2SK4078
2SK4078
2SK4078-ZK-E1-AY
2SK4078-ZK-E2-AY
O-252
O-252)
K4078
C277C
nec 277c
nec marking code 277
C 277 C
2SK4078-ZK-E1-AY
2SK4078-ZK-E2-AY
D18885EJ1V0DS
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CRCW12068R20J
Abstract: cc7343 Resistor 820 Ohm SI2301 equivalent resistor 0.47 ohm rj45 connector with built in transformer schematic LTM673-R1S2-35 resistor 220 ohm si2301 SOT23-3 10 pin monitor flyback transformer schematics
Text: National Semiconductor Application Note 1521 Youhao Xi Bradley Kennedy April 4, 2008 Introduction 3.3V. Contact National on support to modify the latter version to other output voltage. In the following, descriptions apply to both versions of the circuit boards unless specifically indicated.
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LM5072
DP83848I
10/100Mb/s)
DP83848
AN-1521
CRCW12068R20J
cc7343
Resistor 820 Ohm
SI2301 equivalent
resistor 0.47 ohm
rj45 connector with built in transformer schematic
LTM673-R1S2-35
resistor 220 ohm
si2301 SOT23-3
10 pin monitor flyback transformer schematics
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100N055
Abstract: NP100N055MDH NP100N055PDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N055MDH, NP100N055NDH, NP100N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP100N055MDH,
NP100N055NDH,
NP100N055PDH
NP100N055PDH
NP100N055MDH-S18-AY
NP100N055NDH-S18-AY
NP100N055PDH-E1-AY
NP100N055PDH-E2-AY
100N055
NP100N055MDH
100n05
NP100N055NDH
NP100N055PDH-E1-AY
MP-25ZP
NP100N055PDH-E1
NP100N055NDH-S18-AY
D1880
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D1881
Abstract: NP90N055PUH NP90N055MUH MP-25ZP NP90N055NUH TRANSISTOR MARKING YB NP90N055NUH-S18
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MUH, NP90N055NUH, NP90N055PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MUH, NP90N055NUH, NP90N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP90N055MUH,
NP90N055NUH,
NP90N055PUH
NP90N055PUH
NP90N055MUH-S18-AY
NP90N055NUH-S18-AY
NP90N055PUH-E1-AY
NP90N055PUH-E2-AY
D1881
NP90N055MUH
MP-25ZP
NP90N055NUH
TRANSISTOR MARKING YB
NP90N055NUH-S18
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nec 7800
Abstract: D1880 NP90N055PDH NP90N055NDH NP90N055MDH 90N055 MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MDH, NP90N055NDH, NP90N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MDH, NP90N055NDH, NP90N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP90N055MDH,
NP90N055NDH,
NP90N055PDH
NP90N055PDH
NP90N055MDH-S18-AY
NP90N055NDH-S18-AY
NP90N055PDH-E1-AY
NP90N055PDH-E2-AY
nec 7800
D1880
NP90N055NDH
NP90N055MDH
90N055
MP-25ZP
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13000 transistor TO-220
Abstract: 100N04 np100n04mdh NP100N04PDH MP-25ZP NP100N04NDH S100BR
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N04MDH, NP100N04NDH, NP100N04PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP100N04MDH,
NP100N04NDH,
NP100N04PDH
NP100N04PDH
NP100N04MDH-S18-AY
NP100N04NDH-S18-AY
NP100N04PDH-E1-AY
NP100N04PDH-E2-AY
13000 transistor TO-220
100N04
np100n04mdh
MP-25ZP
NP100N04NDH
S100BR
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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