AK2573A
Abstract: AK2573AVB C101 620CH
Text: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)
|
Original
|
PDF
|
AK2573A]
AK2573A
MS0189-E-01>
AK2573A
AK2573AVB
C101
620CH
|
transistor c114
Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Text: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC
|
Original
|
PDF
|
Intel740TM
BAV99LT1
C3216X7R1C105KT000N
C0805C104K5RAC
C0805C103K5RAC
330PF
T491D106K016AS
C0805C331J5GAC
T491D226K016AS
transistor c114
c102 TRANSISTOR
TRANSISTOR c105
transistor c114 chip
c104 TRANSISTOR
C114 transistor
c107 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR C107
c101 TRANSISTOR
|
BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
|
Original
|
PDF
|
MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
|
77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
|
Original
|
PDF
|
|
R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
|
Original
|
PDF
|
CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
|
samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
|
Original
|
PDF
|
ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
|
C1029
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
|
Original
|
PDF
|
C1029
65x65
C1029
|
C1029
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
|
Original
|
PDF
|
C1029
C1029-4-98
65x65
C1029
|
C1029
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
|
Original
|
PDF
|
C1029
65x65
C1029
|
transistor c1026
Abstract: C1026 c1026 transistor C1026 NPN Transistor transistor c1026 equivalent
Text: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50
|
Original
|
PDF
|
C1026
100x3
C1026-4-98
65x65
transistor c1026
C1026
c1026 transistor
C1026 NPN Transistor
transistor c1026 equivalent
|
transistor c1026
Abstract: C1026 C1026 NPN Transistor equivalent transistor C1026 transistor c1026 equivalent c1026 transistor
Text: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50
|
Original
|
PDF
|
C1026
100x3
65x65
transistor c1026
C1026
C1026 NPN Transistor
equivalent transistor C1026
transistor c1026 equivalent
c1026 transistor
|
transistor c1026
Abstract: C1026 NPN Transistor C1026 c1026 transistor transistor c1026 equivalent transistor c1026 data
Text: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50
|
Original
|
PDF
|
C1026
100x3
65x65
transistor c1026
C1026 NPN Transistor
C1026
c1026 transistor
transistor c1026 equivalent
transistor c1026 data
|
C-107
Abstract: C-108 IRGBC30FD2 c103 a ge
Text: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
|
Original
|
PDF
|
IRGBC30FD2
10kHz)
O-220AB
C-108
C-107
C-108
IRGBC30FD2
c103 a ge
|
c103 a ge
Abstract: C-107 C-108 IRGBC30FD2
Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
|
Original
|
PDF
|
IRGBC30FD2
10kHz)
O-220AB
C-108
c103 a ge
C-107
C-108
IRGBC30FD2
|
|
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. CL8800 Sequential Linear LED Driver General Description Features ►► Minimal component count base config: CL8800 + 6 resistors + diode bridge ►► No magnetics, no capacitors ►► Up to 7.5W output (13W w/ heat sink) ►► >110Lm/W using efficient LEDs
|
Original
|
PDF
|
CL8800
110Lm/W
CL8800
DSFP-CL8800
C102913
|
m104 mosfet
Abstract: AND8174 1N4148 BAS16LT1 C101 NIS110N02 NIS6111 NIS6201 NTD011N02 NTD110N02
Text: AND8174/D NIS6111 Better ORing Diode Operation Notes Prepared by: Ryan Liu ON Semiconductor http://onsemi.com APPLICATION NOTE General Description NIS6111 Simplified Block Diagram The NIS6111 is a simple and reliable device consisting of an integrated control IC with a low RDS on power MOSFET,
|
Original
|
PDF
|
AND8174/D
NIS6111
m104 mosfet
AND8174
1N4148
BAS16LT1
C101
NIS110N02
NIS6201
NTD011N02
NTD110N02
|
schematic diagram for phoenix power system
Abstract: ORing diode FOR 24 VDC REDUNDANT POWER SUPPLY AND8189 1N4148 BAS16LT1 NCP1403 NIS110N02 NIS6111 NIS6201 NTD011N02
Text: AND8174/D NIS6111 Better ORing Diode Operation Notes Prepared by: Ryan Liu ON Semiconductor http://onsemi.com APPLICATION NOTE General Description NIS6111 Simplified Block Diagram The NIS6111 is a simple and reliable device consisting of an integrated control IC with a low RDS on power MOSFET,
|
Original
|
PDF
|
AND8174/D
NIS6111
schematic diagram for phoenix power system
ORing diode FOR 24 VDC REDUNDANT POWER SUPPLY
AND8189
1N4148
BAS16LT1
NCP1403
NIS110N02
NIS6201
NTD011N02
|
transistor c104 M 123
Abstract: c103 a ge
Text: PD - 9.794 bitem ational SqrIR ectifier IRGBC30FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
|
OCR Scan
|
PDF
|
IRGBC30FD2
10kHz)
C-107
5545E
TQ-220AB
C-108
554S2
transistor c104 M 123
c103 a ge
|
C1030
Abstract: c1036 transistor C1032 CEE 16a CEE 32A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRGPH50KD2 C1030 transistor
Text: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
IRGPH50KD2
-10ps
O-247AC
C-1036
C1030
c1036 transistor
C1032
CEE 16a
CEE 32A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
IRGPH50KD2
C1030 transistor
|
IR 1838
Abstract: IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032
Text: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
IRGPH50KD2
-10ps
O-247AC
C-1036
IR 1838
IRGPH50KD2
c1034
CEE 16a
CEE 32A
1838 ir
C1029
C-1032
|
Untitled
Abstract: No abstract text available
Text: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses
|
OCR Scan
|
PDF
|
IRGPH50KD2
-10ps
O-247AC
S5452
C-1036
|
MSA-7
Abstract: C1022 C1019 MSA7
Text: QUALITY TECHNOLOGIES REFLECTIVE OBJECT SENSOR MSA7 OLD PART NO.— MCA7 PACKAGE DIMENSIONS DESCRIPTION The MSA7 optoisolator consists of an infrared em itting diode and a silicon planar photodarlington. The on-axis radiation of the em itter and the on-axis response o f the
|
OCR Scan
|
PDF
|
|
rac 16a 400v
Abstract: C1030 irgph50kd2 e C1030 transistor VS 1838 B C1036 high power Rectifier diode c1036 transistor rac 16a- 400v c1034
Text: PD - 9.1121A bitemational tor]Rectifier IRGPH50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V C ES • Short circuit rated -1 Ops @ 125°C, VGE = 10V 5jis 0 VGE = 15V • Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
IRGPH50KD2
C-1035
O-247AC
C-1036
rac 16a 400v
C1030
irgph50kd2 e
C1030 transistor
VS 1838 B
C1036
high power Rectifier diode
c1036 transistor
rac 16a- 400v
c1034
|
Untitled
Abstract: No abstract text available
Text: PD - 9.794 bitem ational [îô r IRectifier IRGBC30FD2 INSULATED G ATE BIPOLAR TRANSISTO R WITH ULTRAFAST SO FT R EC O V ER Y DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
|
OCR Scan
|
PDF
|
10kHz)
IRGBC30FD2
C-107
TQ-220AB
C-108
|
