AK2573A
Abstract: AK2573AVB C101 620CH
Text: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)
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AK2573A]
AK2573A
MS0189-E-01>
AK2573A
AK2573AVB
C101
620CH
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marking code C15
Abstract: AK2574 AK2574VB R132 R133
Text: ASAHI KASEI [AK2574] AK2574 156M Laser Diode Driver + APC for Burst Mode Features - 156M Laser Diode Driver for burst mode application - BIAS current switching - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor APC_FF
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AK2574]
AK2574
AK2574
MS0266-E-00>
marking code C15
AK2574VB
R132
R133
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MAX5968
Abstract: 12VSB cb amplifier
Text: 19-5115; Rev 1; 2/10 Circuit-Breaker and Ideal Diode Controller with Digital Monitoring Functions The MAX5968 soft-switch and ideal diode controller protects systems with redundant DC-DC converter modules against failure of the converter by controlling external
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MAX5968
12VSB
cb amplifier
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Triangle Microwave phase shifter
Abstract: PQ-94 PQ-12 PQ-14 PQ-17 PQ-17T PQ-27 PQ-28 PQ-31 PQ-45
Text: ANALOG DIODE PHASE SHIFTERS SERIES PQ CONTINUOUSLY VARIABLE — 0.1–18 GHz GENERAL INFORMATION An analog phase shifter continuously changes the phase of a microwave signal by varying a D.C. voltage. Since the D.C. voltage applied to the diode is a reverse bias, the current drain is negligible
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Triangle Microwave phase shifter
Abstract: Linearizer PQ-31 "Phase Shifters" PQ-39 Triangle Microwave PQ-12 PQ-14 PQ-17 PQ-45 GHz
Text: ANALOG DIODE PHASE SHIFTERS SERIES PQ CONTINUOUSLY VARIABLE — 0.1–18 GHz GENERAL INFORMATION An analog phase shifter continuously changes the phase of a microwave signal by varying a D.C. voltage. Since the D.C. voltage applied to the diode is a reverse bias, the current drain is negligible
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phototr
Abstract: LBR-127
Text: Reflective Object Sensor Model No: LBR-127 Description The LBR-127 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED
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LBR-127
LBR-127
840nm
phototr
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melf ZENER diode COLOR CODE
Abstract: 1N747A1 JANTX melf zener diodes color code 1N758A 1N746A-1 melf ZENER diode COLOR BAND 1N759A JANTXV 1N4372AUR-1 1N746AUR-1 1N759AUR-1
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 August 2010. INCH-POUND MIL-PRF-19500/127V 18 May 2010 SUPERSEDING MIL-PRF-19500/127U 2 September 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/127V
MIL-PRF-19500/127U
1N4370A-1
1N4372A-1
1N746A-1
1N759A-1,
1N4370AUR-1
1N4372AUR-1
1N746AUR-1
1N759AUR-1,
melf ZENER diode COLOR CODE
1N747A1 JANTX
melf zener diodes color code
1N758A
melf ZENER diode COLOR BAND
1N759A JANTXV
1N759AUR-1
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 October 1999. INCH-POUND MIL-PRF-19500/127N 09 July 1999 SUPERSEDING MIL-S-19500/127M 14 March 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/127N
MIL-S-19500/127M
1N4370A-1
1N4372A-1,
1N746A-1
1N759A-1,
1N4370AUR-1
1N4372AUR-1
1N746AUR-1
1N759AUR-1,
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1N746A-1
Abstract: 452 regulator JANHCB1N752
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 August 2006. INCH-POUND MIL-PRF-19500/127T 23 May 2006 SUPERSEDING MIL-PRF-19500/127R 19 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/127T
MIL-PRF-19500/127R
1N4370A-1
1N4372A-1
1N746A-1
1N759A-1,
1N4370AUR-1
1N4372AUR-1
1N746AUR-1
1N759AUR-1,
452 regulator
JANHCB1N752
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Triangle Microwave Digital Attenuator
Abstract: KDI attenuator Cannon connectors GT atten Triangle Microwave GA Triangle Microwave attenuator GT attenuator voltage controlled ITT Cannon GT-50 Attenuators
Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25–18 G H z GENERAL INFORM TION A KDI/Triangle Pin Diode attenuators continuously change the amplitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current controlled models do not have thermal compensation included, the voltage
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Triangle Microwave Digital Attenuator
Abstract: Triangle Microwave GA GT atten KDI attenuator MCE OR KDI pin diode attenuator GT-50 GT attenuator voltage controlled KDI triangle 2-gt attenuator
Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25–18 G H z GENERAL INFORM TION A KDI/Triangle Pin Diode attenuators continuously change the amplitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current controlled models do not have thermal compensation included, the voltage
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650nm 5mw laser
Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Text: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
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1550nm
650nm 5mw laser
ird300
laser range finder schematics
500mW 808nm infrared laser diode driver circuit
650nm laser diode 200mw
circuit diagram of radar range finder
LD-808-500G
t15f-xyz-wm
LD-808-1000G
LD-650-5A
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254 nm uv LED
Abstract: Chiller umbilical connector UV diode 250 nm r134a Q302 Q303-HD 532 nm laser diode umbilical Q3-04
Text: COMMERCIAL LASERS High-Power Q-Switched Diode-Pumped UV Laser Q Series Key Features • Highest commercially available pulse energy and peak power • Tighter process control due to superior energy stability enabled by unique intracavity harmonic generation
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498-JDSU
5378-JDSU
254 nm uv LED
Chiller
umbilical connector
UV diode 250 nm
r134a
Q302
Q303-HD
532 nm laser diode
umbilical
Q3-04
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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Untitled
Abstract: No abstract text available
Text: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.
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AK2572]
AK2572
10mA/0
MS0290-E-01>
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Untitled
Abstract: No abstract text available
Text: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is
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25noseconds
DP-51-1)
DP-21
DP-32
DP-33
DP-36
DP-41
DP-42
DP-44
DP-51
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/117P
MIL-PRF-19500/117N
1N962B-1
1N992B-1,
1N962BUR-1
1N992BUR-1,
1N962C-1
1N992C-1,
1N962CUR-1
1N992CUR-1,
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anzac switches
Abstract: anzac SIGNAL PATH designer designers handbook
Text: PIN DIODE RF SWITCHES INTRODUCTION PIN diode RF switches are devices which control the path of RF signals through transm ission line media. The switching is performed by biased PIN diodes in the RF path and is totally solid state in operation. PIN diode RF switches are typically used in small
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PD-500,
anzac switches
anzac
SIGNAL PATH designer
designers handbook
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TA 1319 AP
Abstract: ML725B11F-05 ML725B11F-07
Text: MITSUBISHI ELECTRIC CORPORATION SPECIFICATION PREPARED BY: M. Yamada CHECKED BY: K.Mori APPROVED BY: S.Minamihara DATE: Nov. 8. En g l i s h v e r s io n o n l y ‘01 1.TYPE : ML725BllF-04,05,06,07 2.APPLICATION : Optcal Fiber Communication 3.STRUCTURE : InGaAsP/InP DFB LASER DIODE
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ML725B11
G480570
GNOK-ML725BUF-Ã
25B-package.
TA 1319 AP
ML725B11F-05
ML725B11F-07
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Triangle Microwave GA
Abstract: Triangle Microwave Digital Attenuator Triangle Microwave attenuator KDI attenuator GT32T
Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 G H GENERAL INFORM 1AON KDIATriangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current con
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DIODE 23L
Abstract: No abstract text available
Text: ANALOG DIODE PHASE SHIFTERS SERIES PQ CONTINUOUSLY VARIABLE — 0.1-18 GHz GENERAL INFORMATION An analog phase shifter continuously changes the phase of a microwave signal by varying a D.C. voltage. Since the D.C. voltage applied to the diode is a reverse bias, the current drain is negligible
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thermistor 180M
Abstract: SLD3 L0302
Text: SLD302XT SONY. 200m W High Power Laser Diode Description SLD302XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by
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SLD302XT
180mW
180mW)
SLD302XT
thermistor 180M
SLD3
L0302
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MAD1103P
Abstract: mad1108P MAD130 MAD1107P MAD130P MAD1103 MAD130C 817 opto IFR 740 MAD1103F
Text: MOTOROLA SC DIODES/OPTO bêE » • b3b?255 DDÔ7H1] MAD130 MADI103 MAD1107 MAD1108 MOTOROLA <§ SEMICONDUCTORS P .O . B O X 2 0 9 1 2 • P H O E N IX . A R I Z O N A TÛD ■ M0T7 85036 DIODE ARRAY These diode arrays are m u ltip le diode ju n c tio n s fa b rica te d by a
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MAD130
MADI103
MAD1107
MADI108
C309M
MAD1103P
mad1108P
MAD1107P
MAD130P
MAD1103
MAD130C
817 opto
IFR 740
MAD1103F
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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