philips rf manual
Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H
Text: RF 매뉴얼 6차 개정 RF 제품에 대한 애플리케이션 및 디자인 매뉴얼 2005년 5월 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 본 RF 매뉴얼은 RF 시스템에 대한 광범위한 각종 자료와 다양한 측면을 망라하였습니다. 본 문서에서는 RF 소 小 신호 개별 부품 (Small signal
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2SK163 spice model
Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Text: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed
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BFQ93A
Abstract: Philips varicap BFG18 MPF102 modelS philips catv 860 amplifier ic BFG480W j175 fet 2SK163 2SK43 transistor baw 92
Text: RF 매뉴얼 7차판 Application and design manual for RF products November 2005 발행일: 2005년 11월 문서 주문 번호: 9397 750 15371 Philips RF Manual 7th Edition 2 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 당사의 RF 매뉴얼 7차판을 찾아주신 고객님을 환영합니다. 저희는 애플리케이션에 기반한 정보에 완전
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transistors BC 543
Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-23
OT-363
OT-143
transistors BC 543
183W
Diode BAW 62
BCR191P
SOT23 BCV 27
TRANSISTOR BC 530
sot-23 p1
diode S6 78A
mmic amplifier sot-89 p4
diode sot 143 s5
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2SK163-L
Abstract: BFG480W BFG135 amplifier BB143 Varicap BB141 BB145 2SK163 3SK290 BFP180
Text: RFマニュアル第7版 RF製品のアプリケーションおよびデザイン・マニュアル 2005年12月 リリース日付：2005年12月 Henk Roelofs RF製品担当副社長兼ジェネラル・マネージャ 概要 RFマニュアル第7版をご利用いただきありがとうございます。当社が対話型操作によるアプリケー
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2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-23
OT-143
2907A PNP bipolar transistors
diode S6 78A
MMIC SOT 363
s1140
DIODE TA 70/04
2907A PNP bipolar transistors datasheet
Diode BAW 62
TRANSISTOR BC 158
baw 92
68W SOT
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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25-RF-BIPOLAR-Transistors.
45-RF-BIPOLAR-Transistors.
OT-23
OT-143
S4 78a DIODE schottky
diode S6 78A
BC 148 TRANSISTOR DATASHEET
transistors BC 543
TRANSISTOR BC 158
BC 158 is npn or pnp
68W npn
TRANSISTOR BC
s6 78a
baw 92
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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O-92d
2907A PNP bipolar transistors
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 450 pnp
diode S6 78A
transistors bf 517
BFG sot89
BC 327 SOT 23
BAS20 SOT23
DIODE TA 70/04
bcp 846
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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RF8109
Abstract: 2SK43 vHF amplifier module 2450Mhz BFG480W BB200 varicap diode PMBFJ174 2SK163 3SK290 BB145 bga2714
Text: RFマニュアル第8版 RF 製品のアプリケーションおよびデザイン・マニュアル 2006 年 7 月 リリース日付：2006 年 7 月 Henk Roelofs RF製品担当副社長兼ジェネラル・マネージャ 概要 各版では RF マニュアルの改善に努めています。この第 8 版でも同様です。さらに多くのアプリケーションベ
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2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written
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Untitled
Abstract: No abstract text available
Text: SK 35 DGDL 126 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper PI:9 <I <I¥; PG:9 =' U BS VIA -%2&'' ,.8& */'& '5& /E/&1 =' U BS YRWZ VI <I¥;U B F <I%,+A .5 U @ +' =^ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +
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Q62702-A397
Abstract: BAW76
Text: BAW 76 S iliziu m -P la n a r-L o g ik -D io d e B A W 7 6 ist eine Silizium-Planar-Diode in „Double-Heat-Sink"-Technik im Glasgehäuse 56 A 2 DIN 41883 D O -35 . Die Kathode ist durch einen roten Farbring gekennzeichnet. BAW 76 eignet sich besonders zum Einsatz als schnelle Schaltdiode in Rechenmaschinen,
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BAW76
BAW76
DO-35)
Q62702-A397
26min.
26min
77max.
Q62702-A397
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BAW62
Abstract: FR 309 diode
Text: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage
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BAW62
BAW62
EAVV62
FR 309 diode
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MLA428-1
Abstract: BAW62
Text: Philips Semiconductors Product specification High-speed diode BAW62 FEA TU R E S D E S C R IP T IO N • Hermetically sealed leaded glass S O D 27 D O -35 package The BAW 62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass S O D 2 7 (D O -35)
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BAW62
DO-35)
BAW62
MLA428-1
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diode GG 79
Abstract: BAW 79 W 79AB
Text: SIEMENS Silicon Switching Diodes • For high-speed switching • High breakdown voltage • Com mon cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D BAW 79 A . BAW 79 D Marking Ordering Code tape and reel GE GF GG GH Q62702-A781 Q 62702-A782 Q62702-A771
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Q62702-A781
62702-A782
Q62702-A771
Q62702-A733
EHA07003
EH800I00
diode GG 79
BAW 79 W
79AB
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Untitled
Abstract: No abstract text available
Text: 3SE D • 6231,350 OQlbSSS S H S I P Silicon Switching Diodes SIEM EN S/ SPCLi SENICONDS • • T-£>3~\{ _ BAW 78 A -BAW 78D Switching applications High breakdown voltage Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape
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Q62702-A675
Q62702-A676
Q62702-A677
Q62702-A678
Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
BAW78D
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BAV99W A7
Abstract: BAV99VV BAS16VV BAS16W BAV70W BAV99W BAW56W BAV99W peak temperature
Text: BAS16W / BAV70W BA W 56W / BAV99W Surface M o u n t Sw itchin g Diode SW ITCHING DIODE 200-215m AMPF.RRES 70-75 VOLTS Featui-es: T o w Current Leakage *Low Forward Voltage “ Reverse Recover Time T rr*6 n s *Sm all Outline Surface Mount SOT-323 Package •
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BAS16W
BAV70W
BAW56W
BAV99W
200-215m
OT-323
T-323
SC-70)
OT-323
BAV99W A7
BAV99VV
BAS16VV
BAV99W
BAV99W peak temperature
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed double diode BAW56W FEATU RES DESCRIPTION • Very small plastic SMD package The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the
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BAW56W
BAW56W
OT323
MAM092
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BAW56W
Abstract: d 132 smd diode
Text: N AflER PHILIPS/DISCRETE bTE D bb53=J31 □OSt.'ì'ì? QbT « A P X Philips Semiconductors Product specification S ilico n p lan ar epitaxial h ig h -s p e ed d o u b le d io de FEATURES • P lastic S M D envelope • High sw itch ing speed • G eneral application.
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BAW56W
OT323
BAW56W
d 132 smd diode
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode Array • • BAW56 Fo r high -spe e d sw itch in g ap plications C om m o n anode Type 0 B A W 56 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package A1 Q 62702-A471 Q 62 70 2-A 68 8 S O T 23
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BAW56
62702-A471
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Diode BAW 62
Abstract: BAW 62 SOT23 DIODE 504 BAW 43 Q62702-A471 diode fr 107 7x7x1 SOT-23 ZF
Text: B A W 56 S iliziu m -P la n a r-D o p p e ld io d e Die epitaktische Siliziu m -P lan ar-D op peldiode B A W 56 besteht aus zw ei Einzeldioden mit gemeinsamer Anode. Die Diode im Kunststoffgehäuse 23 A 3 DIN 41 869 S O T -2 3 findet Anw endung als schneller Schalter speziell für D ünn- und D ickfilm schaltungen. Der Typ
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OT-23)
Q62702-A-471-F1
001min
Diode BAW 62
BAW 62 SOT23
DIODE 504
BAW 43
Q62702-A471
diode fr 107
7x7x1
SOT-23 ZF
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IN4152
Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.
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IS960
IS961
DO-35
IN4152
IN4606
in4447
IN916B
IN4608
IN917
IN4150
in914b
IN4149
IN4164
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Diode BAW 62
Abstract: oszillograf 7x7x1 DIODE S45 Q68000-A1185-F1 99A7 01JE Diode BAW 99 500F2
Text: Silizium-Planar-Doppeldiode BAV99 Die epitaktische Silizium-Planar-Doppeldiode B A V 99 bestehend aus zwei in Reihe geschal teten Einzeldioden. Die Diode im Kunststoffgehäuse 23 A3 DIN 41 869 S O T -2 3 , findet Anwendung als schneller Schalter speziell für Dünn- und Dickfilmschaltungen. Der Typ
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OT-23)
Q68000-A1185-F1
01min
450KlW
Diode BAW 62
oszillograf
7x7x1
DIODE S45
Q68000-A1185-F1
99A7
01JE
Diode BAW 99
500F2
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