manual g081pu series
Abstract: No abstract text available
Text: Manual of 808nm Fiber Coupled Laser Diode Module G081PU1600M G081PU1750M G081PU11500M G081PU25W G081PU210W G081PU315W G081PU325W 02.04.2012 Manual G081PU Series 1 of 10 1 Introduction Thank you for choosing this high power fiber coupled Laser Diode for your application.
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808nm
G081PU1600M
G081PU1750M
G081PU11500M
G081PU25W
G081PU210W
G081PU315W
G081PU325W
G081PU
manual g081pu series
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Untitled
Abstract: No abstract text available
Text: MAX14588 Evaluation Kit General Description The MAX14588 evaluation kit EV kit is a fully assembled and tested circuit board that demonstrates the MAX14588 adjustable overcurrent and overvoltage protector. The EV kit features TVS diode on input and Schottky diode
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MAX14588
MAX14588
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BPC808-40C-622
Abstract: 808nm laser 808nm Oclaro OCLARO laser ausn submount
Text: 40W 808nm 30% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC808-40C-622 Features: • Mounted 10mm laser diode bar • Passive 1” x 1” Cu block cooler • 30% fill factor 150µm emitter / 500µm pitch • 40W operating power •
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808nm
BPC808-40C-622
BPC808-40C-622
790-830nm
21CFR
790-830nm
BH12902
808nm laser
Oclaro
OCLARO laser
ausn submount
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diode 8008
Abstract: TH-C1725-P TH1725
Text: TH-C1725-S &TH-1725-P / TH-C1730-S &TH-C1730-P 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1xx-S or P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1725-S
TH-1725-P
TH-C1730-S
TH-C1730-P
79ver
8008-ed3
diode 8008
TH-C1725-P
TH1725
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tsha 5201
Abstract: TSHA5202 TSHA520 TSHA5200 TSHA5201 TSHA5203
Text: TSHA520. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
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TSHA520.
08-Apr-05
tsha 5201
TSHA5202
TSHA520
TSHA5200
TSHA5201
TSHA5203
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TSHA620
Abstract: TSHA6202 TSHA520 TSHA6200 TSHA6201 TSHA6203
Text: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
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TSHA620.
TSHA520.
D-74025
11-May-04
TSHA620
TSHA6202
TSHA520
TSHA6200
TSHA6201
TSHA6203
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TSHA520
Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
Text: TSHA520. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
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TSHA520.
D-74025
11-May-04
TSHA520
TSHA5200
TSHA5201
TSHA5202
TSHA5203
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Untitled
Abstract: No abstract text available
Text: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
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TSHA620.
TSHA520.
08-Apr-05
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650nm 5mw laser
Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Text: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
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1550nm
650nm 5mw laser
ird300
laser range finder schematics
500mW 808nm infrared laser diode driver circuit
650nm laser diode 200mw
circuit diagram of radar range finder
LD-808-500G
t15f-xyz-wm
LD-808-1000G
LD-650-5A
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5819 DIODE
Abstract: 13B1 GM5BW05340AC
Text: PRODUCT DOCUMENTATION Sharp Optoelectronic Components GM5BW05340AC Light Emitting Diode Issue Date: Jan. 27, 2005 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications if any are for standard use; See Important Restrictions for limitations on special applications. See Limited
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GM5BW05340AC
5819 DIODE
13B1
GM5BW05340AC
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: ESD8008 ESD Protection Diode Low Capacitance Array for High Speed Data Lines The ESD8008 is designed specifically to protect four high speed differential pairs. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage
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ESD8008
ESD8008
ESD8008/D
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Untitled
Abstract: No abstract text available
Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm
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TSHA5200,
TSHA5201,
TSHA5202,
TSHA5203
2002/95/EC
2002/96/EC
TSHA520.
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: GP2W0002YP IrDA Data Sheet FEATURES • Built-in Photodiode • Operating voltage 2.7 V to 5.5 V • In circuit design, make allowance for the degradation of light emitting diode output that results from long continuous operation 50% degradation/5 years .
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GP2W0002YP
SMA00008
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: ESD8008 ESD Protection Diode Low Capacitance Array for High Speed Data Lines The ESD8008 is designed specifically to protect four high speed differential pairs. Ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage
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ESD8008
ESD8008
ESD8008/D
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Untitled
Abstract: No abstract text available
Text: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides
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8473D
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904nm
Abstract: GaAs 904nm diode s 360 904nm laser diode LA390 LA330 ld330
Text: LASER DIODE INC 1SE D | SBflE^flS □□□G4ÖS D | * - ~ '* g 5 > 1 0 D , LASER DIODE, INC._ LA-300 SERIES LD-3 T ' " tfl"P s r GaAs and GaAlAs LASER DIODE ARRAYS FOR PULSED OPERATION FEATURES ► High Efficiency a t Low Drive Currents
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LA-300
904nm
904nm
GaAs 904nm
diode s 360
904nm laser diode
LA390
LA330
ld330
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Untitled
Abstract: No abstract text available
Text: TH-C1725-S I TH-C1730-S 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C17XX-S products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar". The bar is mounted with the active zone P side
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TH-C1725-S
TH-C1730-S
TH-C17XX-S
8008-ed2
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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FUH -29A001B
Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Text: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in
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BUK638-800A/B
BUK638
-800A
1E-09
BUK638-80Ã
FUH -29A001B
BUK638-800A
BUK638-800B
WO 02S
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