laser diode array
Abstract: ARR21P300 300W Laser Diode for cutting 300w power diode
Text: 300W QCW Laser Diode Array Part Number: ARR21P300 A PACKAGE • Packaged 6-Bar Laser Diode Array · Patented MicroStackTM Technology · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
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ARR21P300
785-1064nm)
250Hz
------300W
laser diode array
ARR21P300
300W
Laser Diode for cutting
300w power diode
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ARR21P300
Abstract: No abstract text available
Text: Industrial Microphotonics Company 300W QCW Laser Diode Array Part Number: ARR21P300 A PACKAGE • Packaged 6-Bar Laser Diode Array · Patented MicroStackTM Technology · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS
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ARR21P300
785-1064nm)
250Hz
laser2000
C-10/01
ARR21P300
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IR7373C
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 IR7373C Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=940nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode IR7373C is a high intensity diode , molded in a water clear plastic
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IR7373C
940nm
IR7373C)
NoDIR-737-279
date08-05-2003
IR7373C
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IR2383C
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 IR2383C Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=940nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode IR2383C is a high intensity diode , molded in a water clear plastic
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IR2383C
940nm
IR2383C)
NoDIR-238-062
date04-16-2003
IR2383C
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 IR533C Feature High reliability High radiant intensity Peak wavelength p=940nm 2.54mm Lead spacing Low forward voltage Pb Free Descriptions EVERLIGHT’s Infrared Emitting Diode IR533C is a high intensity diode , molded in a blue plastic package.
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IR533C
940nm
IR533C)
CDIR-053-001
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 HIR333/C8 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=850nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode HIR333/C8 is a high intensity diode , molded in a blue transparent plastic
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HIR333/C8
850nm
HIR333/C8)
NoDIH-033-055
date11-28-2002
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 HIR333B/C1 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=850nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode HIR333B/C1 is a high intensity diode , molded in a black plastic
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HIR333B/C1
850nm
HIR333B/C1)
NoDIH-033-057
date02-12-2003
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 HIR2383C/L67 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=850nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode HIR2383C/L67 is a high intensity diode , molded in a water clear plastic
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HIR2383C/L67
850nm
HIR2383C/L67)
NoDIH-238-060
date04-14-200y
date04-14-2003
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IR533
Abstract: ir533c
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 IR533C Feature ․High reliability ․High radiant intensity ․Peak wavelength λp=940nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free Descriptions ․EVERLIGHT’s Infrared Emitting Diode IR533C is a
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IR533C
940nm
IR533C)
NoCDIR-053-001
IR533
ir533c
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IR264C
Abstract: 3mm ir receiver IR led 940nm
Text: Technical Data Sheet 3mm Circuit Board Indicators,T-1 3/4 A214B/IR264C/S746 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=940nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode A214B/IR264C/S746
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A214B/IR264C/S746
940nm
A214B/IR264C/S746)
NoCDAI-021-002
date2003/7/14
IR264C
3mm ir receiver
IR led 940nm
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Infrared LED , T-1 3/4 HIR333-2/H0/L11/C8 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=850nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode HIR333-2/H0/L11/C8
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HIR333-2/H0/L11/C8
850nm
HIR333-2/H0/L11/C8)
NoDIH-033-054
date11-28-2002
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infrared 5mm LED 940nm
Abstract: photodiode 940nm IR333/H2 ir333h2
Text: Technical Data Sheet 5mm Infrared With Stopper LED , T-1 3/4 IR333/H2/P3/C9 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=940nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode IR333/H2/P3/C9 is a
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IR333/H2/P3/C9
940nm
IR333/H2/P3/C9)
NoDIR-033-271
date01-17-2003
infrared 5mm LED 940nm
photodiode 940nm
IR333/H2
ir333h2
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Opto Interrupter ITR20001/T Features Fast response time High analytic High sensitivity Cut-off visible wavelength P=940nm Pb Free This product itself will remain within RoHS compliant version. Descriptions The ITR20001/T consist of an infrared emitting diode and an NPN silicon
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ITR20001/T
940nm
ITR20001/T
IR2424-3C
PT2424-6B.
CDRX-200-006
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PT2424-6B
Abstract: ITR20001 ITR20001-T PT2424 IR2424-3C
Text: Technical Data Sheet Opto Interrupter ITR20001/T █ Features ․Fast response time ․High analytic ․High sensitivity ․Cut-off visible wavelength λP=940nm ․Pb Free ․This product itself will remain within RoHS compliant version. █ Descriptions The ITR20001/T consist of an infrared emitting diode and an NPN silicon
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ITR20001/T
940nm
ITR20001/T
IR2424-3C
PT2424-6B.
NoCDRX-200-006
date2005/10/18
PT2424-6B
ITR20001
ITR20001-T
PT2424
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schematic diagram Power Tree UPS
Abstract: transistor crossreference schematic diagram UPS fet SN74CB3Q16233 FET Transistor Guide schematic diagram of laptop docking station 1 into 12 demultiplexer circuit diagram FST3253 equivalent fet data book free download schematic diagram online UPS
Text: TM Technology for Innovators Digital Bus Switch Selection Guide Texas Instruments TI has a long history in the digital bus switch market. TI was the first to introduce the 3.3-V lowvoltage bus switch (CBTLV) and continues to make major technology advances in
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32-bit
A070804
SCDB006A
schematic diagram Power Tree UPS
transistor crossreference
schematic diagram UPS fet
SN74CB3Q16233
FET Transistor Guide
schematic diagram of laptop docking station
1 into 12 demultiplexer circuit diagram
FST3253 equivalent
fet data book free download
schematic diagram online UPS
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Ericsson Installation guide for RBS 6000
Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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304X264X130
CL200
TC554001FI-85L
TC554001FTL-70
BMSKTOPAS900
BMSKTOPAS870
10/100TX
13X76
35X100
19X89
Ericsson Installation guide for RBS 6000
ericsson RBS 6000 series INSTALLATION MANUAL
Philips Twin Eye PLN 2032
ERICSSON RBS 6000
Ericsson RBS 6000 hardware manual
ericsson RBS 3206
dil relay 349-383
IGBT semikron 613 GB 123 CT
ericsson RBS 6000 series
Z0765A08PSC
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VN5770AKP
Abstract: No abstract text available
Text: VN5770AKP-E Quad smart power solid state relay for complete H-bridge configurations Datasheet − production data Features Type RDS on IOUT (typ) VCC Root part number 1 280 mΩ(1) 8.5 A 36 V SO-28 1. Total resistance of one side in bridge configuration •
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VN5770AKP-E
SO-28
2002/95/EC
VN5770AKP
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Untitled
Abstract: No abstract text available
Text: VN5770AK-E Quad smart power solid state relay for complete H-bridge configurations Features Type RDS on IOUT VCC VN5770AK-E 280mΩ(1) 8.5A(2) 36V SO-28 1. Total resistance of one side in bridge configuration 2. Typical current limitation value • ■ ■
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VN5770AK-E
VN5770AK-E
SO-28
2002/95/EC
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4j diode
Abstract: VN5770AKP-E 6ds6
Text: VN5770AKP-E Quad smart power solid state relay for complete H-bridge configurations Features Type RDS on VN5770AKP-E 280 mΩ(1) IOUT (typ) VCC 8.5 A 36 V 1. Total resistance of one side in bridge configuration SO-28 • ECOPACK : lead free and RoHS compliant
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VN5770AKP-E
VN5770AKP-E
SO-28
2002/95/EC
4j diode
6ds6
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Untitled
Abstract: No abstract text available
Text: VN5770AKP-E Quad smart power solid state relay for complete H-bridge configurations Datasheet production data Features Type RDS on VN5770AKP-E 280 m(1) IOUT (typ) VCC 8.5 A 36 V 1. Total resistance of one side in bridge configuration SO-28 • ECOPACK : lead free and RoHS compliant
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VN5770AKP-E
VN5770AKP-E
SO-28
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: VN5770AKP-E Quad smart power solid state relay for complete H-bridge configurations Features Type RDS on VN5770AKP-E 280 mΩ(1) IOUT (typ) VCC 8.5 A 36 V 1. Total resistance of one side in bridge configuration SO-28 • ECOPACK : lead free and RoHS compliant
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VN5770AKP-E
VN5770AKP-E
SO-28
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI OPTICAL DEVICES FU-48SDF-30M14D/15D/16D/17D 1.3 urn DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL(CATV) DESCRIPTION Module type FU-48SDF-30M series has been developed for coupling a singlemode optical fiber and a 1.3 um wavelength InGaAsP DFB LD (Laser diode).
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FU-48SDF-30M14D/15D/16D/17D
FU-48SDF-30M
FU-48SDF-30IW14D/15D/16D/17D
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H11AV3
Abstract: H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2
Text: MOTOROLA B SEM ICONDUCTOR TECHNICAL DATA H11AV1,A H11AV2,A H11AV3,A 6-Pin D IP O p to iso la to rs T ransisto r Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833,
circuit54
H11AV3
H11AV1A
H11AV2A
H11AV3A
AN978
VDE0160
VDE0832
VDE0833
H11AV2
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triac driver opto moc3021
Abstract: MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr
Text: MO TO R O L A SC -CDIODES/OPTO} 1SE D I L,3b755S D D Û D 0 D 1 Optoisolators T M \ - % S | 3 Case 730A-02 A n optoisolator con sists of a gallium arsenide infrared em itting diode, IRED, optically coupled to a m onolithic silic o n p h o to -d e te cto r in a lig h t -s h ie ld in g p ack age .
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3b755S
30A-02
OJJ20
730B-02
730C-02
730D-Q2
triac driver opto moc3021
MOC3000
ic moc3041
C6550
driver circuit MCT2E
A4N25A
motorola til111
MOC3061
h11av1a
4n40 opto coupled scr
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