Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 3L Search Results

    DIODE 3L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 3L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.


    Original
    PDF ENA2196 NGTB20N60L2TF1G A2196-8/8

    1N4148 krad

    Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
    Text: LM136A-2.5QML LM136A-2.5QML 2.5V Reference Diode Literature Number: SNOSAM3D LM136A-2.5QML 2.5V Reference Diode General Description Features The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference


    Original
    PDF LM136A-2 1N4148 krad SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817-1N5819 SCHOTTKY BARRIER DIODE SOT-23-3L FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1. ANODE 3.CATHODE


    Original
    PDF OT-23-3L 1N5817-1N5819 OT-23-3L 1N5817: 1N5818 1N5819: 1N5817 1N5818 1N5819

    W66ESF002X13

    Abstract: generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099
    Text: APPLICATION NOTE Diode modulator for linear zoom. AN96099 Philips Semiconductors Diode modulator for linear zoom. Application Note AN96099 Abstract A short description is given on the existing diode modulator functioning and the changes which have to be made


    Original
    PDF AN96099 W66ESF002X13 generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099

    Untitled

    Abstract: No abstract text available
    Text: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES


    Original
    PDF DSF21035SV DS4176-1 0000A DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30

    diode 1N5819

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE - 1. ANODE FEATURES 3.CATHODE + Power dissipation PD : 300 mW Ta=25℃ Collector current IF : 1 A Collector-base voltage VR : 1N5817:


    Original
    PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 diode 1N5819

    DS4231

    Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
    Text: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.


    Original
    PDF DSF21060SV DDS4231-2 DS4231-3 6000A DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DS4231 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60

    AN4506

    Abstract: DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
    Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs APPLICATIONS • Freewheel Diode ■ Antiparallel Diode ■ Inverters


    Original
    PDF DSF21035SV DS4176-1 DS4176-2 0000A DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30 AN4506 DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35

    DS4231

    Abstract: No abstract text available
    Text: DSF21060SV DSF21060SV Fast Recovery Diode Replaces January 2000 version, issue DS4231-3.0 DS4231-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters.


    Original
    PDF DSF21060SV DS4231-3 DS4231-4 6000A DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DS4231

    DSF21035SV

    Abstract: DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
    Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode ■ Antiparallel Diode ■ Inverters


    Original
    PDF DSF21035SV DS4176-1 DS4176-2 0000A DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30 DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35

    sot-23 Marking sj

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40


    Original
    PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 sot-23 Marking sj

    1N5819

    Abstract: 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23-3L Plastic-Encapsulate Diode www.haorm.cn 1N5817, 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current 1A IO : Collector-base voltage


    Original
    PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 1N5819 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj

    Untitled

    Abstract: No abstract text available
    Text: SEPTEMBER 1996 DSF20060SF ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters. ■ Choppers. ■ Inverse Parallel Diode. ■ Freewheel Diode. FEATURES


    Original
    PDF DSF20060SF DS4218-3 DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 CB450.

    DS4231

    Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
    Text: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.


    Original
    PDF DSF21060SV DDS4231-2 DS4231-3 6000A DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DS4231 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60

    1000A 100V power diode

    Abstract: No abstract text available
    Text: DSF20060SF DSF20060SF Fast Recovery Diode Replaces January 2000 version, DS4218-4.0 DS4219-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode


    Original
    PDF DSF20060SF DS4218-4 DS4219-5 DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 CB450. 1000A 100V power diode

    DSF20060SF

    Abstract: DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60 AN 780a
    Text: DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode


    Original
    PDF DSF20060SF DS4218-3 DS4219-4 DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 CB450. DSF20060SF DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60 AN 780a

    A 7800A

    Abstract: DSF20060SF DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60
    Text: DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs APPLICATIONS • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode


    Original
    PDF DSF20060SF DS4218-3 DS4219-4 DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 CB450. A 7800A DSF20060SF DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60

    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: AN4505 AN4506 Calculation of major IGBT operating parameters
    Text: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode acts as a free-wheeling diode or as a protection diode. Fig. 2 illustrates the packages used by Dynex


    Original
    PDF AN4504 AN4504 AN4504-3 the calculation of the power dissipation for the igbt and the inverse diode in circuits AN4505 AN4506 Calculation of major IGBT operating parameters

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE RB400D SOT-23-3L Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking:D3A Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original
    PDF OT-23-3L RB400D OT-23-3L

    Untitled

    Abstract: No abstract text available
    Text: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small


    Original
    PDF BAV99 BAV99 OT-23 BAV70 BAW56.

    marking code AV sot323 package

    Abstract: STDD15-05W STDD15-07S STDD15 STDD15-04W SOT323-3L
    Text: STDD15 series LOW CAPACITANCE DETECTION DIODE MAIN PRODUCT CHARACTERISTICS IF AV 10 mA VRRM 15 V Tj (max) 150 °C VF (max) 0.51 V • ■ ■ ■ ■ SOT323-6L STDD15-xxS SOT323-3L STDD15-xxW FEATURES AND BENEFITS Low diode capacitance Device designed for RF application


    Original
    PDF STDD15 OT323-6L STDD15-xxS OT323-3L STDD15-xxW OT323 marking code AV sot323 package STDD15-05W STDD15-07S STDD15-04W SOT323-3L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB495D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability Marking: D3Q Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original
    PDF OT-23-3L OT-23-3L RB495D 200mA

    SOT323-3L

    Abstract: No abstract text available
    Text: STDD15 series LOW CAPACITANCE DETECTION DIODE MAIN PRODUCT CHARACTERISTICS IF AV 10 mA VRRM 15 V Tj (max) 150 °C VF (max) 0.51 V • ■ ■ ■ ■ SOT323-6L STDD15-xxS SOT323-3L STDD15-xxW FEATURES AND BENEFITS Low diode capacitance Device designed for RF application


    Original
    PDF STDD15 OT323-3L STDD15-xxW OT323-6L STDD15-xxS STDD15-04W OT323 STDD15-05WFILM SOT323-3L

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S S o t"eV HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module APPLICATION 3-level inverters, 3-level converters, DC choppers. Aug. 1998 A MITSUBISHI ELECTRIC MITSUBISHI FAST RECOVERY DIODE MODULE


    OCR Scan
    PDF RM400DY-66S