Untitled
Abstract: No abstract text available
Text: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode
|
Original
|
PDF
|
DS1109SG
DS4169-3
DS4169-4
1500A
DS1109SG50
DS1109SG49
DS1109SG48
DS1109SG47
DS1109SG46
|
Untitled
Abstract: No abstract text available
Text: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode
|
Original
|
PDF
|
DS1109SG
DS4169-3
DS4169-4
1500A
DS1109SG50
DS1109SG49
DS1109SG48
DS1109SG47
DS1109SG46
|
DS1109SG49
Abstract: DS1109SG50 DS1109SG DS1109SG45 DS1109SG46 DS1109SG47 DS1109SG48
Text: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode
|
Original
|
PDF
|
DS1109SG
DS4169-3
DS4169-4
1500A
DS1109SG50
DS1109SG49
DS1109SG48
DS1109SG47
DS1109SG46
DS1109SG49
DS1109SG50
DS1109SG
DS1109SG45
DS1109SG46
DS1109SG47
DS1109SG48
|
DS1109SG
Abstract: DS1109SG45 DS1109SG46 DS1109SG47 DS1109SG48 DS1109SG49 DS1109SG50
Text: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode
|
Original
|
PDF
|
DS1109SG
DS4169-3
DS4169-4
1500A
DS1109SG50
DS1109SG49
DS1109SG48
DS1109SG47
DS1109SG46
DS1109SG
DS1109SG45
DS1109SG46
DS1109SG47
DS1109SG48
DS1109SG49
DS1109SG50
|
AN4839
Abstract: DS1109SG DS1109SG45 DS1109SG46 DS1109SG47 DS1109SG48 DS1109SG49 DS1109SG50
Text: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode
|
Original
|
PDF
|
DS1109SG
DS4169-3
DS4169-4
1500A
DS1109SG50
DS1109SG49
DS1109SG48
DS1109SG47
DS1109SG46
AN4839
DS1109SG
DS1109SG45
DS1109SG46
DS1109SG47
DS1109SG48
DS1109SG49
DS1109SG50
|
A641LE
Abstract: A641/6RT51 A641 A641L A641LA A641LB A641LC A641LD A641LM A641PN
Text: A641 40mm RECTIFIER DIODE 2600V / 1500A The A641 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
|
Original
|
PDF
|
185oC
-40oC
A641LM
A641LE
A641LD
A641L
A641LE
A641/6RT51
A641
A641LA
A641LB
A641LC
A641LD
A641LM
A641PN
|
Untitled
Abstract: No abstract text available
Text: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications
|
Original
|
PDF
|
CHE1270-QAG
5-44GHz
CHE1270-QAG
E1270
YYWW11
CHE1270
12343546761839A12346BC1D
DSCHE1270-QAG0329
|
MO-220
Abstract: AN0017 CHE1270 CHE1270-QAG esd protection smd
Text: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications
|
Original
|
PDF
|
CHE1270-QAG
5-44GHz
CHE1270-QAG
E1270
CHE1270
5-44GHz
DSCHE1270-QAG0329
MO-220
AN0017
CHE1270
esd protection smd
|
BC237
Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
|
Original
|
PDF
|
1SS383T1
2N3819
2N3903,
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088,
2N5089
BC237
BC847BPDW1T1 Series
BC548
low noise transistors bc638
cbc550c
BC307
2N5550* surface mount
BC212
BSR58LT1
NSDEMN11XV6T1
|
Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13147 Revision. 2 Product Standards Zener Diode DE37120D0L DE37120D0L Silicon epitaxial planar type Unit: mm 1.2 For ESD protection 0.3 0.13 3 • Features 0.8 1.2 Excellent rising characteristics of zener current Iz Low zener operating resistance Rz
|
Original
|
PDF
|
TT4-EA-13147
DE37120D0L
UL-94
|
1310nm DFB BH LASER
Abstract: InGaAsP lens TO STM-16 LD SOURCE Aspheric Lens to56 ball Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Text: 1310nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-131451S Rev. 006 Description KLT-131451x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131451x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs
|
Original
|
PDF
|
1310nm
KLT-131451S
KLT-131451x
25Gbps.
1310nm DFB BH LASER
InGaAsP
lens TO
STM-16
LD SOURCE
Aspheric Lens
to56 ball
Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
|
lens TO
Abstract: 1310nm DFB BH LASER InGaAsP to56 ball laser DFB 1310nm 10mW STM-16 ball lens Aspheric Lens TO56 package Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Text: 1310nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN KLT-131452x Rev.006 Description KLT-131452x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131452x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs
|
Original
|
PDF
|
1310nm
KLT-131452x
KLT-131452x
25Gbps.
lens TO
1310nm DFB BH LASER
InGaAsP
to56 ball
laser DFB 1310nm 10mW
STM-16
ball lens
Aspheric Lens
TO56 package
Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
|
tyco igbt
Abstract: tyco P484 tyco igbt P484 V23990-P484-A Tyco flow pim
Text: V23990-P484-A flow PIM 1, 600V version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom
|
Original
|
PDF
|
V23990-P484-A
D81359
tyco igbt
tyco P484
tyco igbt P484
V23990-P484-A
Tyco flow pim
|
OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
|
Original
|
PDF
|
MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
|
|
|
DBD10G
Abstract: bridge RECTIFIER GI DBD10 DBD10C
Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm
|
Original
|
PDF
|
ENN7030A
DBD10
DBD10]
DBD10-TM
max15°
DBD10G
bridge RECTIFIER GI
DBD10
DBD10C
|
Untitled
Abstract: No abstract text available
Text: MBRB3030CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: http://onsemi.com • Dual Diode Construction – • • •
|
Original
|
PDF
|
MBRB3030CTL
r14525
MBRB3030CTL/D
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm
|
Original
|
PDF
|
ENN7030A
DBD10
DBD10]
DBD10-TM
max15Â
|
tyco igbt
Abstract: V23990-P487-A tyco P487 igbt tyco tyco igbt 1200V V23990P487A th2070
Text: V23990-P487-A flow PIM 1, 1200V trench version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom
|
Original
|
PDF
|
V23990-P487-A
D81359
tyco igbt
V23990-P487-A
tyco P487
igbt tyco
tyco igbt 1200V
V23990P487A
th2070
|
onsemi 035 1314
Abstract: uis test MBR3035CT MBRB3030CTL SMD310
Text: MBRB3030CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: http://onsemi.com • Dual Diode Construction — • • •
|
Original
|
PDF
|
MBRB3030CTL
r14525
MBRB3030CTL/D
onsemi 035 1314
uis test
MBR3035CT
MBRB3030CTL
SMD310
|
DBD10
Abstract: DBD10C DBD10G
Text: Ordering number : ENN7030 DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm
|
Original
|
PDF
|
ENN7030
DBD10
DBD10]
DBD10-TM
max15°
DBD10
DBD10C
DBD10G
|
dbd10g
Abstract: No abstract text available
Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm
|
Original
|
PDF
|
ENN7030A
DBD10
DBD10]
DBD10-TM
max15°
dbd10g
|
BUP60
Abstract: No abstract text available
Text: SIEMENS BUP603D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 603D ^CE 600V h 42A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code
|
OCR Scan
|
PDF
|
BUP603D
O-218
Q67040-A4230-A2
BUP60
|
kp50a
Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
Text: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)
|
OCR Scan
|
PDF
|
ZLKP100A
ZLKP150A
ZLKP200A
ZLKP250A
ZLKP300A
kp50a
kp20a
ZP200A
KP300A
KP200A
ZP300A
kp5a
ZP20A
zp5a
KP100a
|
3 tfk 206
Abstract: SHINDENGEN DIODE
Text: ÿ i ' t - K ï v - i -;u 3 Pha>e Bridge Diode Diode Module mmtt'ikm S15VT o u t l i n e d im e n s io n s S15VTA 800V 15A •S Q IP A '^ -y •  ÎH Œ - B l FSM •y'jy V T A iM : ? ffl i t •I73> im-<yn—? •fa , RATINGS Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
S15VT
S15VTA
S15VT60
S15VT80
S15VTA60
S15VTA80
50HziK3Srt,
3 tfk 206
SHINDENGEN DIODE
|
