PFIM
Abstract: Moeller PFHM Moeller Z-Fw-lp led rojo moeller n led rojo verde z-ms moeller Moeller PFIM zp-ihk dioda LED
Text: Montageanweisung Installation Instructions Notice d’installation Istruzioni per il montaggio Instrucciones de montaje Montá ní návod Z-FW-LP Z-FW-LPD Z-FW-MO Z-FW-LP/MO Z-FW-LPD/MO D Lebensgefahr durch elektrischen Strom! Nur Elektrofachkräfte und elektrotechnisch
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cdr/03
2005a/150501154
PFIM
Moeller PFHM
Moeller Z-Fw-lp
led rojo
moeller n
led rojo verde
z-ms moeller
Moeller PFIM
zp-ihk
dioda LED
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CNV17F-4
Abstract: CNV17 CNY 42 optocoupler dioda CNV17F
Text: SIEMENS FEATURES • H igh C urrent T ran sfer R atio C N Y 1 7F -1,40-80% C N Y 1 7F -2,63-125% C N Y 1 7 F -3 ,100-200% C N Y 1 7 F -4 ,160-320% 17 CNY F S E R IE S PHOTOTRAÑSÍSTOR NO BASE CONNECTION OPTOCOUPLER Package Dimensions in Inches mm t fa i fg] f t l
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SE52744
-X001
CNY17F-2
CNY17F-3
CNY17F
CNV17F-4
CNV17
CNY 42 optocoupler
dioda
CNV17F
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2l09
Abstract: Schottky Diode 40V 6A
Text: DUAL POWER SCHOTTKY RECTIFIERS USD635C USD640C USD645C USD650C 12A Av, up to 50V DESCRIPTION The USD600C series of power Schottky rectifiers, in the industry standard T0-220 package, is specifically designed fo r operation in power switching circuits to frequencies in excess of 100 KHz. The series combines Schottky rectifiers in one
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USD635C
USD640C
USD645C
USD650C
USD600C
T0-220
USD650C
USD635C
2l09
Schottky Diode 40V 6A
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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shockley diode
Abstract: diode shockley shockley 1n3842 shockley diode 1N3842 IN3831
Text: MICROWAVE DIODE CORPORATION , , «3831 IN3846 • h -, SILICON PLANAR THYRISTOR DIODES lOOO Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA. u PACKAGE OUTLINE ELECTRI CAL PA RA M ETERS Type Switching Voltage Vg V Holding Cutrent IH (mA)
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IN3831
IN3846
IN3832
IK3833
IN3834
IK3835
IN3836
IN3837
IN3838
shockley diode
diode shockley
shockley
1n3842
shockley diode 1N3842
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2N69S
Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
Text: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching
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2N5989
2N5991
2N5989
2NS991
V01TS>
2N69S
To226AB
diodA QE
2N5891
dioda OA 50
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IRF710
Abstract: IRF711 IRF710.711
Text: N-CHANNEL POWER MOSFETS IRF710/711 FEATURES TO-220 • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability
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IRF710/711
IRF710
IRF711
IRF710.711
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BA513
Abstract: BA521 BA517 BA543 BA521 diode BA523 BA531 BA519 BA533 BA544
Text: Silicijeve planarne signalne diode Silicon planar signal diodes Tip/Type I fav 1100M pri/at pri/at pri/at 1 MHz 25 °C i}*mb—25 °C 25°C Ur Ur=OV : mA " BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546
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BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
BA521
BA543
BA521 diode
BA523
BA531
BA533
BA544
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iskra diode
Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA
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BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
iskra diode
BA531
Iskra by dioda
DIODE ISKRA
Iskra
BA-518
1N4153 silicon diodes
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100Vha
Abstract: No abstract text available
Text: 0 .O P ÎE K Product Bulletin OPB845 May 1993 Slotted Optical Switches Types OPB845A, OPB845B collect«? »_ « ANCoe 355 2< 26 7SO (19 30) I .740 <ie so) (6.BO) IS .10) I EMITTER •- 1 '- • CATHOOE &QTTQN VIEW s •HIS DIMENSION IS CONTROLLED AT THE HOUSING BASE ONLT.
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OPB845
OPB845A,
OPB845B
1800nA,
100Vha
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DD-221
Abstract: dioda module
Text: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,
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IRGNI0075M12
0D22152
10OnH
DD-221
dioda module
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Untitled
Abstract: No abstract text available
Text: 4. EXPLANATION OF RATINGS AND STANDARDS 4 -1 M axim um R ating* In general, the maximufn rating value should not be exceeded in order to guarantee the life and reliability of integrated circuit products. The Absolute Maximum Rating should not be exceeded even for a moment.
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TC74HC
HC-62
HC-63
HC-64
HC-66
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Untitled
Abstract: No abstract text available
Text: • OO^flùb fl£35 b05 47T ■ SIEMENS Mini PROFET BSP 452 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load
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Q67000-S271
fi235bG5
fl23SbOS
fl23StGS
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Untitled
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC QhE D ] b7TflSÔD DD0QSS5 7 | Optoelectronics Division 1987 C ost S a v e r Product! TRW Electronic Components Group C a |, T R W for more -information! § M \ W W Product Bulletin 5226 _ T - H - <S>£ _ January 1985 Optically Coupled Isolators
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0PI3253
E58730
0PI3153
0PI3253
0PI3253are
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LKI300
Abstract: ao 6786 2n6785 Unitrode 678-6 dioda s31
Text: TH W T T R O ^ r T O R 9347963 D in i c1347clki3 0 0 1 0 5 3 b F UNITRODE CORP 92D 10536 D POWER MOSFET TRANSISTORS jtx jtxv 400 Volt, 3.6 Ohm N-Channel T - 3 <?~o7 FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown
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c1347c
D1DS41
LKI300
ao 6786
2n6785
Unitrode 678-6
dioda s31
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VM-50V
Abstract: No abstract text available
Text: SSS6N80A Advanced Power MOSFET FEATURES BVDS8 = 800 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = lD = 3.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ Lower Leakage Current : 25 M A(M ax) @ VM = 800V
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SSS6N80A
VM-50V
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Q62702-S506
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSS 87 • SIPMOS - enhancement mode • Drain-source voltage Vbs = 240V • Continuous drain current l B = 0.29A • Drain-source on-resistance • Total power dissipation 8 ds «»> = 6.0Q PD - 1.0W Type Marking Ordering code for
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Q62702-S506
BSS87
Q62702-S506
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Untitled
Abstract: No abstract text available
Text: CD510825 Powerex, Inc., 200 H lllia Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts CD510825 Dual Diode POW-R-BLOK™ Modules 250 Amperes/800 Volts Outline Drawing Dimension A B Inches 5.906
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CD510825
Amperes/800
14bai
CDS1082S
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dioda BY 235
Abstract: DIODA SS 14
Text: IR FR /U 420A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ By* = 500V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ Vos = 500V
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IRFR/U420A
dioda BY 235
DIODA SS 14
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bm311
Abstract: No abstract text available
Text: SSR/Ü4N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVjjss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 *iA M ax. @
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4N60A
SSR/U4N60A
bm311
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Untitled
Abstract: No abstract text available
Text: 32E D m fl23b3BG □ Q l ? m c] 7 « S I P S IP M O S N C han n el M O S F E T B S S 119 SIEMENS/ SPCLi SEMI CONDS T _ " • SIPMOS - enhancement mode • Drain-source voltage Vfe« = 100V • Continuous drain current I d - 0.17A • Drain-source on-reslstance
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fl23b3BG
Q62702-S631
23b320
QD17154
BSS119
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617G
Abstract: sfh diode 617 SFH617 reflective optocoupler puls detector sfh617g
Text: SIEMENS FEATU R ES SFH617G 5.3 kV TRIOS * OPTOCOUPLER Package Dimensions in Inches mm * C u rre n t T ra n s fe r R atios: SFH 617(3-1,40-80% S F H 6 1 7 G -2 ,63-125% SFH 6 1 7 G -3 ,100-200% S F H 6 1 7 G -4 ,160-320% * C reepage D is ta n c e s a n d C learances
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SFH617G
SFH617G
617G
sfh diode 617
SFH617
reflective optocoupler
puls detector
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D60B APT60D50B 600V 500V 60A 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S PRO DUCT FEATURES P R O D U C T B E N E F IT S • Anti-Parallel Diode
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APT60D60B
APT60D50B
O-247
O-247AD
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NX DIODE SM
Abstract: 2N6164 2N6764 q2N6764 MOSF6
Text: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E
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2N6764
2N6764
NX DIODE SM
2N6164
q2N6764
MOSF6
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