darlington transistor 90v
Abstract: MJ11030 MJ11031
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11030
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MJ11030
-250mA
500mA
-500mA
darlington transistor 90v
MJ11030
MJ11031
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NPN transistor Ic 50A
Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031
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MJ11031
250mA
500mA
NPN transistor Ic 50A
darlington transistor 90v
darlington npn 90v
MJ11030
MJ11031
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darlington npn 90v
Abstract: darlington transistor 90v transistor 20a MJ11013 MJ11014
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A
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MJ11013
darlington npn 90v
darlington transistor 90v
transistor 20a
MJ11013
MJ11014
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COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
Abstract: transistor 20a MJ11013 MJ11014
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A
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MJ11014
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
transistor 20a
MJ11013
MJ11014
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darlington npn 90v
Abstract: darlington transistor 90v MJ11014
Text: NPN MJ11014 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)
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MJ11014
darlington npn 90v
darlington transistor 90v
MJ11014
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MJ11013
Abstract: ua1k
Text: PNP MJ11013 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)
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MJ11013
MJ11013
ua1k
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transistor mj11028 equivalent
Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
Text: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A
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MJ11028
MJ11030
MJ11032
MJ11029
MJ11031
MJ11033
TEMPJ11033
100mA
transistor mj11028 equivalent
MJ11033
MJ11032
darlington 300w
transistor mj11032 equivalent
MJ11028
MJ11029
300w amplifier
darlington npn 90v
MJ11031
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Untitled
Abstract: No abstract text available
Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A
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MJ11028
MJ11030
MJ11032
MJ11029
MJ11031
MJ11033
MJ11028
MJ11030
MJ11029
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Untitled
Abstract: No abstract text available
Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A
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MJ11028
MJ11030
MJ11032
MJ11029
MJ11031
MJ11033
100mA
250mA
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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SDM3303
Abstract: SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON
Text: -JSutron Devices. Inc. MEDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR*« FORMERLY 03] CHIP NUMBER dTI CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available
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203mm)
O-66/3
SDM3303
SL 100 NPN Transistor base emitter collector
2N6350
SDM3103
transistor c35 equivalent
NPN Transistor VCEO 80V 100V DARLINGTON
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2SD2604
Abstract: 5001T
Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2
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2SD2604
2SD2604
5001T
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2SD2604
Abstract: No abstract text available
Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 . 03.2 ± 0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.)
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2SD2604
2SD2604
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 . Ç&3.2 ±0.2 -j I.- 2.7±0-2
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2SD2604
100/zs^
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1225 transistor 09 d
Abstract: No abstract text available
Text: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)
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2SD2604
1225 transistor 09 d
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2SD2604
Abstract: No abstract text available
Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS . 03.2 ±0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.) Low Saturation Voltage : Vç;e (sat) = 1.5V (Max.)
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2SD2604
2SD2604
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FT5759M
Abstract: No abstract text available
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5759M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Rating Symbol Condition Value Unit -55 - +1 50 “C T, + 150 °C Collector to Base Voltage VcBO -100 V Emitter to Base Voltage
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FT5759M
FT5759M
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Solitron Devices
Abstract: 452M
Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC 7 DF|fl3bflL0H DDG2flES S 95D 0 2 825 S0LITR0N DEVICES INC ^5 D MTÄ[L© Devices, Inc. M EDIUM VOLTAGE, FAST SWITCHING MONOLITHIC N PN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR* [FORMERLY 03 ] CHIP NUMBER CONTACT METALLIZATION
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203mm)
ultrasoniSDM3303;
SDM3103;
2N6350
Solitron Devices
452M
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TRANSISTOR BDX
Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T
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BUV48
BUV47
O-22CIAB
CB-117
BUV37
CB-244
CB-285
TRANSISTOR BDX
TRANSISTOR BDX 285
pnp transistor 1000v
TRANSISTOR BDX 53
transistor BDX 65
transistor BDX 80
bux diode
darlington NPN 1000V isotop
DARLINGTON ESM 749
transistor BU 184
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pnp transistor 1000v
Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A
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BUV48
BUV47
CB-244
CB-285
pnp transistor 1000v
transistor buv 90
bux diode
darlington NPN 1000V transistor
pnp transistor 600V
transistor ESM 30
buv PNP
transistor BU 104
NPN Transistor VCEO 1000V
transistor BUX 48
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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2SC4627
2SC5021
-2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
2SD2345
D1274A
B1317
C4714
D1707
b1108
c2258 transistor
D2052 transistor
transistor b1154
2sD2504 transistor
B1398
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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MJ11015
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J11013 M J11015 High-Current Complementary Silicon Transistors i l DM M J11012 . . . for use as output devices in complementary general purpose amplifier applica tions. M J11014 • High DC Current Gain — hpE = 1000 Min @ Iq - 20 Adc
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MJ11012
MJ11013
MJ11014
MJ11015
MJ11O10
J11013
J11015
J11012
J11014
J11016*
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