darlington
Abstract: "Darlington Transistors" Darlington Transistors Transistors
Text: Back to Bipolar Darlington Transistors Back to Bipolar Darlington Transistors
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Untitled
Abstract: No abstract text available
Text: ULN2003 YOUDA INTEGRATED CIRCUIT HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY—ULN2003 DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. FEATURES ULN2003 has a 2.7kΩ series base resistor for each darlington pair, allowing operation directly with TTL or
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ULN2003
ULN2003
500mA
ULN200370â
200mA
250mA
300mA
350mA
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MJE802
Abstract: No abstract text available
Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,
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MJE802
MJE802
OT-32
OT-32
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2N6055
Abstract: No abstract text available
Text: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics
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2N6055
2N6055
com/2n6055
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1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
1N4001 transistor free
BC337 figure
1N4001
BC337
BU323P
silicon diode 1N4001 specifications
transistor BC337
transistor darlington npn
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2N6056
Abstract: ALL SILICON COMPLEMENTARY transistors darlington
Text: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics
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2N6056
2N6056
com/2n6056
ALL SILICON COMPLEMENTARY transistors darlington
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BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
BC337 rbe
BC337 figure
1N4001
BC337
BU323P
diode 1N4001 voltage limitations
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2SA1841
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10
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2SA1841
2SA1841
MP-10
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2n222 TRANSISTOR
Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
2n222 TRANSISTOR
Ferroxcube core
MR826 equivalent
1N493
transistor 2n222
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1N493
Abstract: transistor 2N222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
1N493
transistor 2N222
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Untitled
Abstract: No abstract text available
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
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B5742G
Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
B5742G
high voltage fast switching transistor for ignition coil drivers application
of diode 2n222
2n222 TRANSISTOR
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darlington pair transistor
Abstract: J 620 610 transistor DARLINGTON ARRAYS darlington pair power transistor darlington pair transistor table ILN2003 darlington power transistor Monolithic Transistor Pair ILN2003A KK2003A
Text: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The KK2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The
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KK2003A
500-mA
012AC)
darlington pair transistor
J 620 610 transistor
DARLINGTON ARRAYS
darlington pair power transistor
darlington pair transistor table
ILN2003
darlington power transistor
Monolithic Transistor Pair
ILN2003A
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uln2003r
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs
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ULN2003R
ULN2003R
500mA.
OP-16
QW-R113-013
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Untitled
Abstract: No abstract text available
Text: 2N6294 NPN Darlington Transistor 4.94 Transistors Darlington Transistors NPN Americ. Page 1 of 1 Enter Your Part # Home Part Number: 2N6294 Online Store 2N6294 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N6294
2N6294
com/2n6294
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motorola transistor ignition
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR
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BU323AP
340D-01
motorola transistor ignition
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M208 B1
Abstract: fuji darlington module fuji transistor modules 1di50
Text: High Hf e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) v CEX(sus) <V) (A) •c hFE (min) (A) VCE
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1DI100MA-050
Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
Text: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)
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1DI30MA-050
1DI50MA-050
1DI100MA-050
1DI200MA-050
1DI300M-050
1DI400M-050
223A7C
DD2S21
2d175m-120
6DI20MS-050
fuji darlington module
6di50m-120
1DI100MA
1DI100MA050
2DI50M-050
1DI100
M613
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration
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MJE802
MJE802
OT-32
GC73280
OT-32
O-126)
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diode zenner 7v
Abstract: LM500S 5.1 V zenner diode KID65083AP KID65081 KID6508 KID65084AP
Text: SEMICONDUCTOR TECHNICAL DATA KID65081AP/AF ~ KID65084AP/AF BIPOLAR DIGITAL INTEGRATED CIRCUIT 8 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The KID6508* series are high-voltage, high-current darlington drivers comprised of eight NPN darlington pairs.
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KID65081AP/AF
KID65084AP/AF
KID6508*
500mA
DIP-18Pin.
FLP-20Pin
KID65081AP/AF
KID65082AP/AF
diode zenner 7v
LM500S
5.1 V zenner diode
KID65083AP
KID65081
KID6508
KID65084AP
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bu323a
Abstract: motorola transistor ignition
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Ttansistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN
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BU323A
motorola transistor ignition
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency
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2N6050
2N6057
2N6051*
2N6058*
2N6052*
2N6059*
2N6050,
2N6051,
2N6058
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Untitled
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
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LM500S
Abstract: KID65083AP KID65081 KID6508 N777
Text: SEMICONDUCTOR TECHNICAL DATA KID65081AP/AF ~ KID65084AP/AF BIPOLAR DIGITAL INTEGRATED CIRCUIT 8 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The KID6508* series are high-voltage, high-current darlington drivers comprised of eight NPN darlington pairs.
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KID65081AP/AF
KID65084AP/AF
KID6508*
500mA
DIP-18Pin.
FLP-20Pin
KID65081AP/AF
KID65082AP/AF
LM500S
KID65083AP
KID65081
KID6508
N777
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