MJE5740
Abstract: MJE5742 MJE-5740 MJE5740G MJE5742G
Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • Pb−Free Packages are Available* POWER DARLINGTON
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MJE5740,
MJE5742
MJE5742
MJE5740
MJE5740
MJE-5740
MJE5740G
MJE5742G
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2SA1841
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10
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2SA1841
2SA1841
MP-10
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2n222 TRANSISTOR
Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
2n222 TRANSISTOR
Ferroxcube core
MR826 equivalent
1N493
transistor 2n222
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1N493
Abstract: transistor 2N222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
1N493
transistor 2N222
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Untitled
Abstract: No abstract text available
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
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B5742G
Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
B5742G
high voltage fast switching transistor for ignition coil drivers application
of diode 2n222
2n222 TRANSISTOR
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2SC4351
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
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2SC4351
2SC4351
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trasistor
Abstract: 2SB1465 NEC RELAY nec 5
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
trasistor
NEC RELAY nec 5
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Untitled
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
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1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
1N4001 transistor free
BC337 figure
1N4001
BC337
BU323P
silicon diode 1N4001 specifications
transistor BC337
transistor darlington npn
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2N6056
Abstract: ALL SILICON COMPLEMENTARY transistors darlington
Text: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics
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2N6056
2N6056
com/2n6056
ALL SILICON COMPLEMENTARY transistors darlington
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BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
BC337 rbe
BC337 figure
1N4001
BC337
BU323P
diode 1N4001 voltage limitations
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2SD1843
Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to
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2SD1843
2SD1843
diode dumper
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2SD1592
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR DARLINGTON CONNECTION FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Low collector saturation
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2SD1592
2SD1592
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NEC RELAY
Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Text: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)
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2SB1465
2SB1465
C11531E)
NEC RELAY
2sb146
NEC RELAY nec 5
C11531E
NEC semiconductor
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D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SA1720
2SA1720
O-220
D1485
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MJ2955 replacement
Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power
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BUT33
BUT33
204AE
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJ2955 replacement
diode T 3512 H
BD581
free transistor equivalent book 2sc789
BU108
motorola diode cross reference
MJE-3439
tip122 pin configuration
2SA756
BU104P
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2SD418
Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
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MJ10000
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SD418
TIP33C equivalent
k 3436 transistor
IR647
TIP121 transistor
buv18a
BU108
2SC1086
tip122 motor control
2N6023
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
P011C
2N6388
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
2N6388
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MJ10006
Abstract: MJ10007 1N4937 mj10006 equivalent
Text: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,
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MJ10007
MJ10007
10Nlit
r14525
MJ10007/D
MJ10006
1N4937
mj10006 equivalent
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BU806 MOTOROLA
Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal
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BU806/D*
BU806/D
BU806 MOTOROLA
BU806
motorola darlington power transistor
NT 407 F TRANSISTOR
221A-06
transistor j 127
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Untitled
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
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Untitled
Abstract: No abstract text available
Text: Central" CZT122 NPN CZT127 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR POWER DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed
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CZT122
CZT127
CZT122,
OT-223
26-September
OT-223
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