5pgm
Abstract: No abstract text available
Text: WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 di/dt cr (dv/dt)cr
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000A2s
Abstract: 22516
Text: WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 di/dt cr (dv/dt)cr 3 Type WPT 225-12
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CR diode transient
Abstract: 064c
Text: SiBOD Thyristors Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode TVS and
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DO-214AA
10x160
10x560
CR diode transient
064c
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Untitled
Abstract: No abstract text available
Text: Description Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode TVS and when compared to a GDT offers lower voltage
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DO-214AA
10x160
10x560
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C10X
Abstract: No abstract text available
Text: SKN 26 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 X22 [22 0C22 0X22 3 X22 [22 0C22 0X22 =HM3 V CR M A 6:Z 0[2 ¥] ;7 V 022 ¥OI >BG C1^2X >B$ C1^2X >BG C1^2[ >B$ C1^2[ >BG C1^0C >B$ C1^0C >BG C1^0X >B$ C1^0X 0122 0122 >BG C1^01 SKR 26
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semikron skkt 90
Abstract: semikron SKK
Text: VRSM VRRM dv/ VDRM dt cr SEMIPACK 3 Thyristor / Diode Modules ITRMS (maximum values for continuous operation) 350 A 420 A 350 A 420 A I TAV (sin. 180; T case = . . .) V V V/µs 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 1000 1000
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T\datbl\B01-S
TH210-
semikron skkt 90
semikron SKK
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semikron skkt 250/14e
Abstract: skkt 90 / 12 semikron thyristor application 10MS8 semikron thyristor skkh skkt 1000 skkt 90 semikron skMt 25 SKMT250
Text: VRSM VRRM dv/ VDRM dt cr SEMIPACK 3 Thyristor / Diode Modules ITRMS (maximum values for continuous operation) 350 A 420 A 350 A 420 A ITAV (sin. 180; Tcase = . . .) V V V/µs 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) 900 800 500 SKKT 210/08 D
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semikron thyristor skkt
Abstract: semikron skkt 210 semikron skkt 90 semikron thyristor skkt 1000 skkt 90 / 12 SKMT250 semikron skkt 200
Text: VRSM VRRM dv/ VDRM dt cr SEMIPACK 3 Thyristor / Diode Modules ITRMS (maximum values for continuous operation) 350 A 420 A 350 A 420 A ITAV (sin. 180; Tcase = . . .) V V V/µs 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) 900 800 500 SKKT 210/08 D
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Untitled
Abstract: No abstract text available
Text: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character istics and a stable dc bias point. Well-matched
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RC4447
RC4447
RM4447
20-lead
Mil-Std-883
Mil-Std-883,
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SCHEMATIC DIAGRAM OF POWER SAVER DEVICE
Abstract: power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice
Text: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features • ■ ■ ■ ■ ■ ■ ■ currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character istics and a stable dc bias point. Well-matched
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RC4447
RC4447
Mil-Std-883
RM4447
20-lead
SCHEMATIC DIAGRAM OF POWER SAVER DEVICE
power saver schematic diagram
SCHEMATIC DIAGRAM OF electrical saver
BV68
1530Q
BM138
D9323
schottky transistor spice
I1211
PIN DIODE .cir spice
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GS 069 LF
Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Text: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
T-39-15
GS 069 LF
HCA-120
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DINS4
Abstract: transistor wkx RCH-855 D1S54
Text: Section 4.4.1 STEP-UP REGULATOR SPECIFICATIONS • Description The S-8435/8436 are CMOS step-up switching regulators that consist of a reference voltage source, a CR oscillator, a power MOS FET, a diode, and a comparator. The output voltage is fixed internally, and a shutdown function is available. The current consumption is drastically
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S-8435/8436
S8435
S-8436
D1S54
DINS4
transistor wkx
RCH-855
D1S54
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HC 8436
Abstract: marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent
Text: STEP-UP SWITCHING REGULATOR S -8 4 3 5 /8 4 3 6 Series The S-8435/8436 Series is a CMOS step-up sw itching regulator that consists of a reference voltage source, a CR oscillation circuit, a pow er MOS FET, a diode, and a com parator. T he output voltage is
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S-8435/8436
S-8435
S-8436
RCH654
2SK1112*
RCH855
2SK1112.
HC 8436
marcon capacitor ce
marcon CE capacitor
seiko hc 1000
transistor lr 3303
CACFM
D1NS4 diode
transistor 2sC3279
S-8435 equivalent tr
2SC3279 equivalent
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Untitled
Abstract: No abstract text available
Text: seMIKROn zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 240 A 270 A 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C) SKKT SKKT SKKH SKKH V drm dt)cr 240 A 270 A Itav (sin. 180, Tcase —. . .)
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131/ered
T01909
KT13110
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n V rsm V rrm dv/ SEMIPACK 1 Thyristor / Diode Modules Itrms (maximum value for continuous operation 180 A V drm dt)cr Itav (s ¡n - 180; Toase = 80 °C) V V V/|xs 115 A 500 400 500 - - SKKH 105/04 D - 700 600 500 SKKT 105/06 D SKKT 106/06 D
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SKKT106B
KT10510
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Untitled
Abstract: No abstract text available
Text: 51E D • 613bb71 000335^ 3hfi ■ s T k G SEMIKRON INC V rsm V rrm dv/ V drm dt cr V V - SEMIPACK 1 Thyristor/ Diode Modules Itr m s (maximum value for continuous operation) 95 A ITAV (sin. 180; Tease = 74 °C) 60 A V/(.is 500 400 500 SKKH 56/04 D - 700
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613bb71
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Untitled
Abstract: No abstract text available
Text: SEMIKRON Vrsm V rrm dv/ V Ita v (sin. 180; Tease = 85 °C 95 A V/|!S V SEMI PACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation) 150 A V drm dt)cr _ - SKKH 91/04 D - SKKH 91/06 D SKKH 92/06 D 500 SKKT 91/08 D SKKT 92/08 D1) SKKH 91/08 D
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SKKT92B
SKMT912)
13bb71
KT09110
B1-58
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V rsm V rrm dv/ V drm dt cr V V SEMIPACK 1 Thyristor/ Diode Modules ITRMS (maximum value for continuous operation) 125 A ITAV (sin. 180; Tease = 78 °C) 80 A V/^S - 700 600 500 SKKT 71/06 D 900 800 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D
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fll3bb71
0DD5A71
KT07109
A13bb71
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 75 A V V V/|xs 500 400 500 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 68 °C) 48 A - - SKKH 41/04 D - 700 600 500 SKKT 41/06 D SKKT 42/06 D
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T04109
KT04110
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 350 A 420 A 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) SKKT SKKT SKKH SKKH V drm dt)cr 350 A 420 A Itav (sin. 180, Tcase —. . .)
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KT21010
SKMT250
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 370 A V drm dt)cr 420 A 370 A 420 A Itav (sin. 180; Toase = 85 °C) V 900 V 800 V/|xs SKKT 213 SKKT 253 230 A 253 A 230 A 250 A SKKT
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Untitled
Abstract: No abstract text available
Text: se MIKRDN V rsm V rrm dv/ V V SEMIPACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation 95 A V drm d t)cr ITAV (sin. 180; Tease = 74 °C) 60 A V/|is 500 400 500 - SKKH 56/04 D - 700 600 500 SKKT 56/06 D SKKT 57/06 D 900 800 SKKH 56/06 D
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n VRSM V rrm <dv/ V d RM dt cr V Itav sin. 180; Tease = 68 ^C) 48 A V/(iS V SEMIPACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation) 75 A 500 400 500 700 600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D SKKH 42/06 D
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SKKH41
SKKH42
SKKT41
SKKT42
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skkt 90
Abstract: SKKT 95 SKKT 57/12 E
Text: s e M IKRD n V V Itav sin. 180; Tease ~ 74 °C 60 A V/fiS 400 500 SEMIPACK 1 Thyristor/ Diode Modules Itr m s (maximum value for continuous operation) 95 A Vrs M V rrm (d v / V drm d t)cr 500 - - SKKH 56/04 D - 700 600 500 SKKT 56/06 D SKKT 57/06 D SKKH 56/06 D
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