1B smd
Abstract: 211C4 311C2 ECE relay smd marking 1C 6 PIN smd 1C E155181 211b2 smd marking 1b 1A smd
Text: Rely on ECE’s Relays, and You Always Relax! MOS RELAY EPR SERIES E155181 R DIP SMD SOP • FEATURES z No EMI/RFI generation z High reliability z No moving parts z Low drive power requirement (TTL/CMOS compatible) z Low On-state resistance z 3750 Voltage input/output isolation (1500V isolation for SO-package)
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E155181
1B smd
211C4
311C2
ECE relay
smd marking 1C 6 PIN
smd 1C
211b2
smd marking 1b
1A smd
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EPR61A40T
Abstract: EPR61A40M D-82178 EPR61A20T epr61a40 EPR61A40S relay zettler EPR61B40T top mark smd mos smd 1C
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/11 A30956 7 EPR MOS RELAY 6PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A30956
E155181
D-82178
EPR61A40T
EPR61A40M
EPR61A20T
epr61a40
EPR61A40S
relay zettler
EPR61B40T
top mark smd mos
smd 1C
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D-82178
Abstract: 41A06S 41A06 EPR411A064101 relay zettler Excel Cell Electronic zettler 800 medical EPR411A064 EPR211A064001 41A06S1
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/7 A31060 3 EPR MOS RELAY 4PIN Low Cost Version 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A31060
E155181
D-82178
41A06S
41A06
EPR411A064101
relay zettler
Excel Cell Electronic
zettler 800 medical
EPR411A064
EPR211A064001
41A06S1
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41A06S
Abstract: 41A06 EPR411A064 41A40T EPR411A064000 EPR411A064100 41A20T 41A06T 41B40S smd 1C
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/16 A31060 3 EPR MOS RELAY 4PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A31060
E155181
D-82178
41A06S
41A06
EPR411A064
41A40T
EPR411A064000
EPR411A064100
41A20T
41A06T
41B40S
smd 1C
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EPR82A40T
Abstract: EPR82A40s EPR82A06M EPR82A40m epr82a40 EPR81C40T EPR82B40M EPR82A06S EPR82A06T EPR82A
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/20 A31061 3 EPR MOS RELAY 8PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A31061
E155181
D-82178
EPR82A40T
EPR82A40s
EPR82A06M
EPR82A40m
epr82a40
EPR81C40T
EPR82B40M
EPR82A06S
EPR82A06T
EPR82A
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KLH1501
Abstract: smd optocoupler cop 200 klh1524 lh1056 opto smd 4pin 15 2mm laptop schematic diagram KLH1516 LH1056A kaqy414s KLH1524A
Text: KLH1056/KLHl056A cosmo HIGH VOLTAGE, Unit: mm Tolerance: FEATURES l Normally Open, Single Pole Single Throw l Control 350 VAC or DC Voltage 0 Switch 130 mA Loads 0 LED Control Current, 2mA 0 Low ON-Resistance 0 dvldt, >500 Vfms 0 Isolation Test Voltage, 3750 VACRMs
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KLH1056
KAQW210TS
KLH1501
smd optocoupler cop 200
klh1524
lh1056
opto smd 4pin 15 2mm
laptop schematic diagram
KLH1516
LH1056A
kaqy414s
KLH1524A
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Untitled
Abstract: No abstract text available
Text: UM10499 230 V and 120 V reference design using UBA20260 Rev. 1 — 30 September 2011 User manual Document information Info Content Keywords UBA20260, step-dimmable, half-bridge CFL driver Abstract This document describes the correct use of the UBA20260 step-dimmable
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UM10499
UBA20260
UBA20260,
UBA20260
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Untitled
Abstract: No abstract text available
Text: UM10498 230 V and 120 V reference design using UBA20261/2 Rev. 1 — 30 September 2011 User manual Document information Info Content Keywords UBA20261, UBA20262, step-dimmable, half-bridge CFL driver Abstract This document describes the correct use of the UBA20261/2
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UM10498
UBA20261/2
UBA20261,
UBA20262,
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smd transistor marking 12W
Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3
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MCH4009
17dB2GHz
SC-72
SC-43
SC-51
O-226
SC-71
O-126
O-92MOD
smd transistor marking 12W
SMD transistor Marking 13w
SMD type Marking 13w
SPM5001
SOT89 PNP marking GA
ec3h04b
smd transistor 12W 52
SMA4205
6c 6pin
SGD103
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SMD CODE list mosfet 6pin
Abstract: ci 6pin smd
Text: IL420/ IL4208 VISHAY Vishay Semiconductors Triac Optocoupler 600 V/ 800V Features • • • • • High input sensitivity IFT = 2.0 mA 600/800 V blocking voltage 300 mA on-state current High static dV/dt 10 kV/µs Inverse parallel SCRs provide commutating
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IL420/
IL4208
i179035
E52744
D-74025
29-Oct-03
SMD CODE list mosfet 6pin
ci 6pin smd
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SMD CODE list mosfet 6pin
Abstract: ci 6pin smd commutation circuit il4208
Text: IL420/ IL4208 VISHAY Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current Features • • • • • High input sensitivity IFT = 2.0 mA 600/800 V blocking voltage 300 mA on-state current High static dV/dt 10 kV/µs Inverse parallel SCRs provide commutating
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IL420/
IL4208
i179035
E52744
VDE0884)
D-74025
20-Nov-03
SMD CODE list mosfet 6pin
ci 6pin smd
commutation circuit
il4208
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Untitled
Abstract: No abstract text available
Text: MOS RELAY EPR Series telcona b est in e l e c t r o n ic co m po n en ts EPR SERIES EPR SERIES DtP W E155181 R RELAY SOP SMD APPLICATIONS FEATURES • • • • No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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E155181
DIP/S408
411C208
411C358
411C408
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a36 smd transistor
Abstract: transistor smd 4z
Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED
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bfl51
CNY17-1/1Z
Y17-3/3Z
Y17-2/2Z
Y17-4/4Z
CNY17
CNY17-1:
CNY17-2:
CNY17-3:
CNY17-4:
a36 smd transistor
transistor smd 4z
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SMD Transistor AFR
Abstract: No abstract text available
Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bbfl51
T-41-83
MCT277
MCT277
C2090
15pseconds
MCT9001
SMD Transistor AFR
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SMD a3a
Abstract: No abstract text available
Text: E2P X>51-27-34 OKI electronic components OCM4D8, 4D9 SERIES_ Dual-Channel/Package General-purpose Type Optical MOS Relay For AC/DC Load GENERAL DESCRIPTION The OCM4C';8 and OCM4 9 Series are dual-channel, optical MOS relays for A C /D C load. The device is available in the same form factor as single-channel devices, w ith an 8-pin DIP and SMDtvpe (gull-wing package.
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OCM42&
tOCM43d/
SMD a3a
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Untitled
Abstract: No abstract text available
Text: HYPER-RED LH T774 Superbright GaAIAs Reverse Gullwing TOPLED Lamp SIEMENS Dimensions in Inches mm .118(3.0) .102(2.6) .039 (1.0)_ .035 (0.9) .090 (2.3). .083(2.1) .134 (3.4) .118(3.0) FEATURES • Reverse gullwingTOPLED: surface mount LED lamp • White package, colorless clear window
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18-pln
fl535t
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SMD CODE PACKAGE SOT25
Abstract: Diodes smd f5 sot36 RB751H-40 RB110 RB111
Text: Schottky Barrier Diodes lo = 1 A to 0.1 A, single or array, low or low leakage. V f, • F o r Rectifier A bsolute maximum ratings Ta = 25eC Part No. lo V rm (V) Ifsm (A) 60Hz1 ^ (A) Electrica Tj Tstg (°C) cc) characteristics VF (V Max. (Ta = 25°C ) Ir ( ¿î A ) Max.
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60Hz1
SMD CODE PACKAGE SOT25
Diodes smd f5
sot36
RB751H-40
RB110
RB111
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1262C
Abstract: No abstract text available
Text: L H 1262C B /C A C SIEM EN S Dual Photovoltaic MOSFET Driver Preliminary Data Sheet FEATURES • High open circuit voltage • High short circuit current • High I/O isolation voltage • Logic compatible input • High reliability D im ensions in Inches mm
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1262C
18-pln
typ135
fl535t
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H1501
Abstract: LH1511
Text: LH1501, LH1511 SIEMENS 1 Form B device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to Absolute Maximum Ratings for extended periods of time can adversely affect reliability.
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LH1501,
LH1511
LH1501
18-pln
H1501
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Untitled
Abstract: No abstract text available
Text: IL329 SIEMENS Optically Coupled Telecom Switch Preliminary Data Sheet FEATURES • Solid state relay and AC input • Optocoupler Package— Single 18 Pin • I/O Isolation, 2500 VRMS • Surface Mountable • Optocoupler - Bidirectional C urrent Detection
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IL329
IL329
18-pln
fl535t
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NEC MARKING
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS jUPC2762T, jUPC2763T 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION ¿¡PC2762T and ¿¡PC2763T are silicon m onolithic integrated circuits designed for the transm ission TX stage
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jUPC2762T,
jUPC2763T
PC2762T
PC2763T
S60-00-1
NEC MARKING
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74ls189 ram
Abstract: 74LS189 27lS03
Text: i - A " — — Page 0001 01/16/89 11:16:37 Tx: AM27LS03 TED - Ft: AVO FMT » S e r v ic e s,M e. A m 2 7LS0 3 ^ 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word X 4-bit low-power Schottky RAMs
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AM27LS03
64-Bit
74LS189.
application011
WF001110
74ls189 ram
74LS189
27lS03
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Untitled
Abstract: No abstract text available
Text: VZÀ WS128K32-20XX I/I/HITE /M IC R O E L E C T R O N IC S 128Kx32 SRAM MODULE Organized as 128Kx32; User C on fig u rab le as 256Kx16 or 512Kx8 FEATURES C om m ercial, Industrial and M i lita r y T e m p era ture Ranges 5 V o lt Po w e r Supply • Access Tim e 20nS
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WS128K32-20XX
128Kx32
87-09H
128Kx32;
256Kx16
512Kx8
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upc2762t
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS «PC2762T, «PC2763T 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION ¿¿PC2762T and ¿¿PC2763T are silicon m onolithic integrated circuits designed for the transm ission TX stage
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uPC2762T
uPC2763T
PC2762T
PC2763T
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