chn 723
Abstract: TSMC 180nm dual port sram chn 448 CHN 727 chn 501 chn 711 CHN 450 TSMC 180nm single port sram tsmc 180nm sram TSMC 180nm
Text: CS4100 TM ADPCM Speech Coders Virtual Components for the Converging World The CS4100 family of adaptive differential pulse code modulators ADPCMs is designed to provide high performance solutions for a broad range of applications requiring speech compression and decompression.
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CS4100
CS4100
DS4100
chn 723
TSMC 180nm dual port sram
chn 448
CHN 727
chn 501
chn 711
CHN 450
TSMC 180nm single port sram
tsmc 180nm sram
TSMC 180nm
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CHN 550
Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12
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6004K12
ZNC-B10
ZN-B14
ZNC-B19
ZNC3-B22
ZNC-K19
VXI-11
CHN 550
CHN 545
chn 710
CHN 712
chn 538
CHN 431
CHN 709
CHN 741
chn 738
chn 648 equivalent
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CHN 530
Abstract: chn 723 chn 448 CHN 727 CS4125 CS4130 chn 711 TSMC sram1 CS4100 CS4110
Text: CS4100 ADPCM Speech Coders Virtual Components for the Converging World The CS4100 family of adaptive differential pulse code modulators ADPCMs is designed to provide high performance solutions for a broad range of applications requiring speech compression and decompression. These
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CS4100
CS4100
DS4100-b
CHN 530
chn 723
chn 448
CHN 727
CS4125
CS4130
chn 711
TSMC sram1
CS4110
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1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF020
1/CHN 326
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Untitled
Abstract: No abstract text available
Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection
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SST38UF166
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
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Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
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SST32LH802
128Kx16
SST32LH802
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Untitled
Abstract: No abstract text available
Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:
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SST39SF010
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Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF080Q_
SST39VF080Q
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27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
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oasis
Abstract: SST39VF400 SST39VF400 read code
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:
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16-Bit)
SST39VF400
oasis
SST39VF400
SST39VF400 read code
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CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF040
32-Pin
SST37VF040
CHN 345 X
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CHN 602
Abstract: CHN 847
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020
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SST29EE020
SST29LE020
SST29VE020
CHN 602
CHN 847
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CHN 847
Abstract: 29EE512
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • 5.0V-only for SST29EE512 3.0-3.6V for SST29LE512 2.7-3.6V for SST29VE512 Fast Read Access Time - 5.0V-only operation: 70 and 90 ns
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SST29EE512
SST29LE512
SST29VE512
CHN 847
29EE512
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF512
32-Pin
SST37VF512
pro-657-0204
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Untitled
Abstract: No abstract text available
Text: f r 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • Uniform 32 KWord blocks Fast Read Access Time: - • Uniform 2 KWord sectors
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16-Bit)
SST39VF200
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TEKELEC te 306
Abstract: 30601
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A
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SST29EE020A
SST29LE020A
SST29VE020A
Reliability526-1102
TEKELEC te 306
30601
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actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
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CHN 329
Abstract: DP 904C
Text: 21Ü 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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16-Bit)
SST39VF160Q
SST39VF160
SST39VF160Q
CHN 329
DP 904C
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chn 347
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF010
32-Pin
SST37VF010
chn 347
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
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Ff-352
Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •
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16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
Ff-352
Ff352
HE 301
chn 511
CHN 549
chn 440
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CHN 949
Abstract: tr/pcb-2-1/TRANSISTOR chn 602
Text: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:
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SST31LH041_
CHN 949
tr/pcb-2-1/TRANSISTOR chn 602
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