Untitled
Abstract: No abstract text available
Text: Incremental encoders Mini series shaft ø6 mm or ø8 mm Resolution 360.5120 pulses BVK programmable Features – Mini encoder programmable – Resolution max. 5120 ppr – Optical sensing – Programmable via DIP-switch – Housing ø40 mm – Operation speed max. 12000 rpm
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RS422
RS422
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chn 720
Abstract: BHk 05
Text: Incremental encoders Mini series end shaft ø6 mm Resolution 360.5120 pulses BHK programmable Features – Mini encoder programmable – Resolution max. 5120 ppr – Optical sensing – Programmable via DIP-switch – Housing ø40 mm – End shaft ø6 mm
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RS422
RS422
chn 720
BHk 05
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CHN 025
Abstract: No abstract text available
Text: Incremental encoders Shaft with clamping or synchro lange Resolution 64.2048 pulses BRIV 58K, BRIV 58S programmable - EcoMag Features – Programmable encoder – Magnetic sensing – Resolution max. 2048 ppr – Programmable via BISS – Wide pulse number range
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Untitled
Abstract: No abstract text available
Text: Incremental encoders End or hollow shaft ø12 mm Resolution 64.2048 pulses BRIH, BRID - EcoMag Features – Encoder with end or hollow shaft ø12 mm – Magnetic sensing – Resolution max. 2048 ppr – High resistance to shock and vibrations – Wide pulse number range
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Untitled
Abstract: No abstract text available
Text: Incremental encoders End or hollow shaft ø12 mm Resolution 64.2048 pulses BRIH, BRID programmable - EcoMag Features – Programmable encoder – Magnetic sensing – Resolution max. 2048 ppr – Programmable via BISS – Wide pulse number range – End or hollow shaft ø12 mm
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Untitled
Abstract: No abstract text available
Text: Incremental encoders Shaft with clamping or synchro lange Resolution 64.2048 pulses BRIV 58K, BRIV 58S - EcoMag Features – Encoder with shaft ø10 mm or ø6 mm – Magnetic sensing – Resolution max. 2048 ppr – High resistance to shock and vibrations
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Untitled
Abstract: No abstract text available
Text: Incremental encoders Mini series end shaft max. ø12 mm Resolution 2.1024 pulses BRIH 40 - EcoMag Features – Mini encoder with end shaft max. ø12 mm – Magnetic sensing – Resolution max. 1024 ppr – Housing ø40 mm – High resistance to shock and vibrations
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Untitled
Abstract: No abstract text available
Text: Incremental encoders Micro series shaft max. ø8 mm Resolution 2.1024 pulses BRIV 30R - EcoMag Features – Micro encoder with shaft max. ø8 mm – Magnetic sensing – Resolution max. 1024 ppr – Housing ø30 mm – Temperature -40.+85 °C – Robust steel lange
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32ble
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CHN 120
Abstract: No abstract text available
Text: Incremental encoders Micro series shaft ø5 mm Resolution 2.1024 pulses BRIV 30 - EcoMag Features – Micro encoder with shaft ø5 mm – Magnetic sensing – Resolution max. 1024 ppr – Housing ø30 mm – High resistance to shock and vibrations – Wide pulse number range
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ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description
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83C97
10BASE-T
83C97
10BASET)
ST CHN 510
chn 809
chn 809 ST
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chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for
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83C95
10BASE-T
83C95
10BASET)
10BASET
chn 809
chn 809 ST
Transistor TT 2246
transistor chn 037
MO40
TT 2246 transistor
capacitor JA8
KMA Series 232
pin diagram of BC 547
SABRE 408
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Transistor TT 2246
Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Text: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for
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83C96
10BASE-T
83C96
10BASET)
10BASET
Transistor TT 2246
transistor chn 911
TT 2246 transistor
jm31a
pulse electronics era transformer
transistor chn 037
chn 809
S4744
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Untitled
Abstract: No abstract text available
Text: 4 Megabit 512K x 8-Bit Multi-Purpose Flash SST39VF040Q Advance Information FEATURES: • Organized as 512 K x 8 • • Single 2.7-3.6V Read and Write Operations • • V • Superior Reliability - • Uniform 4 KByte sectors Block Erase Capability (8 blocks)
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SST39VF040Q
SST39VF040Q
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ST CHN t4
Abstract: a115 da hi ng sst39vf040
Text: 4 Megabit 512K x 8 Multi-Purpose Flash SST39VF040 Prelim inary Specifications FEATURES: • Organized as 512K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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SST39VF040
MO-142
ST CHN t4
a115 da hi ng
sst39vf040
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
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SST32LH802
128Kx16
SST32LH802
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CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF040
32-Pin
SST37VF040
CHN 345 X
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CHN 847
Abstract: 29EE512
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • 5.0V-only for SST29EE512 3.0-3.6V for SST29LE512 2.7-3.6V for SST29VE512 Fast Read Access Time - 5.0V-only operation: 70 and 90 ns
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SST29EE512
SST29LE512
SST29VE512
CHN 847
29EE512
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF512
32-Pin
SST37VF512
pro-657-0204
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CHN T4
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash EEPROM SST28SF040A / SST28VF040A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for the SST28SF040A - 2.7-3.6V for the SST28VF040A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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SST28SF040A
SST28VF040A
CHN T4
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Untitled
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • Fast Read Access Time - 5.0V-only operation: 120 and 150 ns 3.0-3.6V operation: 200 and 250 ns 2.7-3.6V operation: 250 and 300 ns
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SST28SF040
SST28LF040
SST28VF040
SST28SF040
SST28LF040
MO-142
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actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
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CHN 949
Abstract: tr/pcb-2-1/TRANSISTOR chn 602
Text: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:
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SST31LH041_
CHN 949
tr/pcb-2-1/TRANSISTOR chn 602
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