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    diode ba 241

    Abstract: SOT-23 J
    Text: SIEMENS Silicon Schottky Diodes BAS 125 . • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-D1316 Q62702-D1321 OT-23 EHA07005 Q62702-D1322 CHA07004 Q62702-D1323 0700C diode ba 241 SOT-23 J

    EHA07005

    Abstract: EHA07002
    Text: SIEM ENS Silicon RF Switching Diode BAT 18. • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code BAT 18 A2 Q62702-A787 Pin Configuration Package1 SOT 23 0- EH1-» EHA07002 BAT 18-04 AU Q62702-A938


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    PDF Q62702-A787 EHA07002 Q62702-A938 Q62702-A940 EHA07005 Q62702-A942 CHA07004 EHA0700Í EHA07005 EHA07002

    MARKING 77s

    Abstract: Diode LT 410 sot23-6 marking code CU Q62702-A846 7S66 73S SOT23 75s SOT-23 75S SOT23 BAS 70-04 Q62702-A118
    Text: SIEM EN S Silicon Schottky Diodes • • • • S BAS 70. General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-A118 OT-23 EHA07002 Q62702-A730 EHA07005 Q62702-A711 CHA07004 Q62702-A774 EH407006 MARKING 77s Diode LT 410 sot23-6 marking code CU Q62702-A846 7S66 73S SOT23 75s SOT-23 75S SOT23 BAS 70-04