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    Infineon Technologies AG ICE5BR3995CZXKLA1

    COOLSET (INCL. GEN5) PG-DIP-7
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    DigiKey ICE5BR3995CZXKLA1 Tube 1,966 1
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    Mouser Electronics ICE5BR3995CZXKLA1 1,915
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    Newark ICE5BR3995CZXKLA1 Bulk 1,065 1
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    Infineon Technologies AG ICE5BR3995BZXKLA1

    COOLSET (INCL. GEN5) PG-DIP-7
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    DigiKey ICE5BR3995BZXKLA1 Tube 1,930 1
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    Mouser Electronics ICE5BR3995BZXKLA1 1,969
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    Newark ICE5BR3995BZXKLA1 Bulk 1,846 1
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    Rochester Electronics ICE5BR3995BZXKLA1 4,000 1
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    Infineon Technologies AG ICE5BR4780BZXKLA1

    COOLSET (INCL. GEN5) PG-DIP-7
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    DigiKey ICE5BR4780BZXKLA1 Cut Tape 1,794 1
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    Mouser Electronics ICE5BR4780BZXKLA1 1,914
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    Rochester Electronics ICE5BR4780BZXKLA1 4,000 1
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    EBV Elektronik ICE5BR4780BZXKLA1 14 Weeks 2,000
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    Infineon Technologies AG ICE5BR2280BZXKLA1

    COOLSET (INCL. GEN5) PG-DIP-7
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    DigiKey ICE5BR2280BZXKLA1 Tube 1,443 1
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    Avnet Americas ICE5BR2280BZXKLA1 Tube 13 Weeks 2,000
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    Mouser Electronics ICE5BR2280BZXKLA1 1,766
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    Rochester Electronics ICE5BR2280BZXKLA1 4,000 1
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    Advantech Co Ltd PCE-5B12-07A2E

    BACKPLANE 12 CHANNEL COMPACTPCI
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    DigiKey PCE-5B12-07A2E Bulk 1
    • 1 $336
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    Mouser Electronics PCE-5B12-07A2E 1
    • 1 $336
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    Neutron USA PCE-5B12-07A2E 15
    • 1 $379.98
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    CE5B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cr5a5

    Abstract: epson ca18 EA6 SMD 512M acp ca14 S1C33L01 iV220 iv1013 APP15 Epson ca22
    Text: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33401 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not


    Original
    PDF 32-BIT S1C33401 warra42-824451 cr5a5 epson ca18 EA6 SMD 512M acp ca14 S1C33L01 iV220 iv1013 APP15 Epson ca22

    Untitled

    Abstract: No abstract text available
    Text: N0'GFBGF05GDD7@FE0GB0FA0DA N0*A +0A?B>;3@F N0!@6GEFDK0+F3@63D60 35=39703@60(;@AGF N0CE.070E.0!@BGF0%A67>E N0'GFBGF0.A>F39706<GEF?7@F N0*7?AF70'@9'88  ;0%4.)60 )+0)16502033/,'%6,215 ,7>75A?G@;53F;A@E 3F30A?G@;53F;A@E &7FIAD=;@90CG;B?7@F ,7EF0CG;B?7@F


    Original
    PDF GFBGF05GDD7 63D60 F3970 75FDA@ 4GF760 F75FGD7 73FGD7E03 73FGD7E AGF03E0 77FE0

    Epson ca22

    Abstract: TC63 modem APP-20 epson ca18
    Text: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33401 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not


    Original
    PDF 32-BIT S1C33401 Epson ca22 TC63 modem APP-20 epson ca18

    marking code AANG

    Abstract: NT77 MT4C4256 2S650
    Text: ADVANCE MT42C8255 TICittiOLOC' MC 2 MEG VRAM 256K x 8 DRAM WITH 5 1 2 x 8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible


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    PDF MT42C8255 512-cycle 512x8 300mW WT42CI2S6 2S650 marking code AANG NT77 MT4C4256 2S650

    KM416C1000-7

    Abstract: No abstract text available
    Text: KM416C1000 CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance applications


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    PDF KM416C1000 KM416C1000-7 KM416C1000-8 KM416C1000-10 100ns 130ns 150ns 180ns KM416C1000

    MT4C4001

    Abstract: mt4c4001jdc sm03b
    Text: MICRON TECHNOLOGY INC 55E D WÊ blllSHT ITT H I URN M T4C4001J DIE 1 MEG x 4 DRAM fAICRQN MILITARY DRAM DIE 1 MEG x 4 DRAM DIE FEATURES DIE OUTLINE Top View 14 13 12 11 10 15 5 4 3 2 □ □ □ □ □ □□□ □ □ □ □□□ □ DIE DATA BASE D15B


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    PDF T4C4001J 450mW 024-cycle MT4C4001 mt4c4001jdc sm03b

    Untitled

    Abstract: No abstract text available
    Text: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply


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    PDF 512-cvde 275mW 100ns 40-Png MT42C8127

    A/M29F002BT(45/55/70/90/64K DRAM

    Abstract: No abstract text available
    Text: M • I C R O N M T 4 C 1 6 7 0 /1 6 4 K X 16 D R A M DRAM 64K x 1 6 DRAM STATIC COLUMN MODE • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical


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    PDF 225mW MT4C1670 MT4C1671 40-Pin T4C1670/1 MT4C1670/1 A/M29F002BT(45/55/70/90/64K DRAM

    tc 97101

    Abstract: No abstract text available
    Text: ADVANCE MT16LD T 464(S) M IC R O N 4 MEG x 64 DRAM M OD ULE 4 MEG x 64 DRAM 3.3V, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V power supply


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    PDF MT16LD 168-pin, 048-cycle 128ms DE-24) T16LD MT16ID A0-A11 tc 97101

    Untitled

    Abstract: No abstract text available
    Text: ~ 7 ^ ^ é -3 3 -J F U J I TS U M I C R O E L E C T R O N I C S 47E D February 1990 Edition 1.0 DATA SH EET 374^7^2 001*1543 b •FMI FUJITSU MB81C4256-70U-80U-10U-12L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 X 4 Bits Fast Page Mode DRAM T h e Fujitsu M B81C4256 is a C M O S , fully decoded dynam ic RAM organized a s


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    PDF MB81C4256-70U-80U-10U-12L B81C4256 26-lead C2606AS MB81C4256-70L MB81C4256-80L MB81C4256-10L MB81C4256-12L T-46-23-

    DG113

    Abstract: Samsung Capacitor sse samsung pram
    Text: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7


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    PDF KM41V4000LL KM41V4000LL 130ns 150ns 180ns 304x1 KM41V4000/L DG113 Samsung Capacitor sse samsung pram

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5362205BW/BWG KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 • Part Identification Dynamic RAM high density memory module. The


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    PDF KMM5362205BW/BWG KMM5362205BW/BWG 2Mx36 KMM5362205BW 1Mx16 42-pin 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: - PRELIM IN ARY- April 1996 Edition 2.1 FUJITSU PRO DUCT PROFILE SHEET M B 8 14400C-60/-70 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


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    PDF 14400C-60/-70 MB814400C MB814400C-60 MB814400C-70 26-LEAD FPT-26P-M02) F26002S-3C 374T7St.

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 1 M x 16 BIT EMODEDYNAMICRA MB81V18160B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V18160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V18160B features a “fast page” mode of operation whereby high­


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    PDF MB81V18160B-50/-60/-50L/-60L MB81V18160B 16-bit F9712

    Untitled

    Abstract: No abstract text available
    Text: FUJ I TS U M I C R O E L E C T R O N I C S M7E D 3 7 M^7 b 2 o o n s b ? * • 17 i~ November 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C4256A-60/-70/-80/-10 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 X 4 Bits Fast Page Mode DRAM The Fujitsu M B81C 4256A is a CMOS, fully decoded dynam ic RAM organized as


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    PDF MB81C4256A-60/-70/-80/-10 B81C4256A MB81C4256A-80 B81C4256A-10 MB81C4256A-60 MB81C4256A-70 MB81C4256A-10 T-46-23-17

    Untitled

    Abstract: No abstract text available
    Text: JM 2 8 W9i MICRON • MT42C4255 IIC H N O K X .Y INC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply


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    PDF MT42C4255 512-cyde 275mW 100ns

    Untitled

    Abstract: No abstract text available
    Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    PDF KM4216C/V256 512x16 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA 77BT/WEU